• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.135.2-135.2
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• 2008

• Bulletin of the Korean Chemical Society
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• v.20 no.12
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• pp.1413-1417
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• 1999

Chemical poisoning of Ni/MgO catalyst was induced by hot alkali carbonate vapor in molten carbonate fuel cell (MCFC), and the poisoned (or contaminated) catalyst was characterized by TPR/TPO, FTIR, and XRD analysis. Carbonate electrolytes such as K and Li were transferred to the catalyst during DIR-MCFC operation at 650 ℃. The deposition of alkali species on the catalyst consequently led to physical blocking on catalytic active sites and structural deformation by chemical poisoning. TPR/TPO analysis indicated that K species enhanced the reducibility of NiO thin film over Ni as co-catalyst, and Li species lessened the reducibility of metallic Ni by chemical reaction with MgO. FTIR analysis of the poisoned catalyst did not exhibit the characteristic ${\vector}_1$$(D_{3h})$ peaks (1055 $cm^{-1},\;1085\;cm{-1})$ for pure crystalline carbonates, instead a new peak (1120 $cm^{-1})$ was observed proportionally with deformed alkali carbonates. From XRD analysis, the oxidation of metallic Ni into $Ni_xMg_{1-x}O$ was confirmed by the peak shift of MgO with shrinking of Ni particles. Conclusively, hot alkali species induced both chemical poisoning and physical deposition on Ni/MgO catalyst in DIR-MCFC at 650 ℃.

• Analytical Science and Technology
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• v.8 no.4
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• pp.669-674
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• 1995

The preparation and characterization of photosemiconductive electrodes of GaAs and of $Fe_2O_3$ doped with MgO or CaO were investigated. The doped $Fe_2O_3$ photosemiconductive electrodes were prepared from thin films sintered at temperatures from 1,100 to $1,450^{\circ}C$, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure of $Fe_2O_3$ and spinel structure of $Mg_xFe_{3-x}O_4$ or $Ca_xFe_{3-x}O_4$ were analyzed by X-ray diffraction and scanning electron microscopy. The cathodic and anodic photocurrents on these electrodes indicated a critical doping amount of 5-11 wt. %. The photocurrents were enhanced when GaAs electrodes were treated with methylene violet the anodic photo-currents were temporarial enhanced and changed to the cathodic ptotocurrents after the surface was dryed.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.35-35
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• 2000

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1746-1751
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• 2015

In this study low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate high voltage PEO drawbacks such as high cost, dimensional deformation and porosity. Low voltage PEO produces a thin coating which causes low corrosion resistance. In order to solve such problem, 0.1~0.6M pyrophosphates were added in a bath containing 1.4M NaOH, and 0.35M Na₂SiO₃. 70 V PEO was conducted at 25℃ for 3 minutes. Chemical composition, morphology and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg₂SiO₄, and Mg₂O₇P₂. The morphology of film showed appropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide a good corrosion protection for the AZ31B magnesium alloy.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.209-214
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• 1999

This paper deals with the effects of activation process of MgO thin film on the dielectric characteristics of surface discharge type AC PDP. The discharge voltage decreased with increase in the MgO activation time and temperature until $400^{\circ}C$ under the condition of clean high vacuum. However, for the sample activated above $430^{\circ}C$ the discharge voltage increased. These results may be explained by the MgO morphology change and surface cleaning in the process of activation.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.