• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.355-355
• /
• 2010

The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

• 한국자기학회지
• /
• 제21권6호
• /
• pp.214-218
• /
• 2011

본 연구에서는 DC 마그네트론 스퍼터링을 이용해 MgO 단결정 기판 위에 성장된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 박막 미세구조의 변화를 연구하였다. Ag 박막의 결정성 및 표면 거칠기는 인가전력(sputtering power) 및 증착온도의 변화에 따라 증착온도가 증가하는 경우 (200) 방향의 결정성이 향상되는 것을 확인하였으며, 인가전력이 증가되는 경우 표면 거칠기가 감소하는 것을 확인하였다. 또한 고분해능 TEM(transmission electron microscopy) 및 XRR(X-ray reflectivity) 측정을 통해 MgO 기판 위 Ag층의 켜쌓기 성장 및 MgO 기판과 Ag층 사이에 산화층에 해당하는 계면층이 존재하는 것을 알 수 있었으며, 증착온도의 증가에 따른 Ag의 섬상구조 형성 및 intermixing 효과에 의한 Ag/CoFeB 계면층의 변화 및 자기적 특성의 변화를 연구하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.533-535
• /
• 2004

We suggest the use of a self-assembled ultra thin organic film that can suppress the hydration of MgO protective layer in AC-PDP. We analyzed the degree of hydration of MgO layer in AC-PDP by XPS when exposed to air after vacuum deposition which proved the effectiveness of the hydration prevention. We also made PDP test panels to demonstrate the improvement in the luminance and luminous efficiency when the hydration of MgO surface is suppressed by the use of self-assembled ultra thin organic film.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.217-220
• /
• 2002

In this paper, an accelerated lifetime test method of MgO thin film is suggested. The most important test factors are surface temperature of the PDP, gas pressure, the applied voltage and frequency. The standard test conditions are $50^{\circ}C$, 400Torr, 20% over voltage and 300kHz ,respectively. The accelerated lifetime of MgO is significantly varied with the MgO preparing conditions.

• 한국전기전자재료학회논문지
• /
• 제14권8호
• /
• pp.658-662
• /
• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• The Korean Journal of Ceramics
• /
• 제7권1호
• /
• pp.20-25
• /
• 2001

PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

• Transactions on Electrical and Electronic Materials
• /
• 제4권6호
• /
• pp.13-16
• /
• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2000년도 춘계연구발표회 논문개요집
• /
• pp.144-145
• /
• 2000

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2001년도 춘계연구발표회 논문개요집
• /
• pp.102-103
• /
• 2001

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
• /
• pp.97-97
• /
• 1997