• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.108-112
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• 2002

We investigated the secondary electron emission characteristics of MgO layer used as the protecting material in a.c. plasma display panel(a.c.-PDPs) using a pulsed ion beam technique, where the surface charging can be effectively suppressed during the measurement. The measurement of the secondary electron emission coefficients ($\gamma$) on the surface of $SiO_2$ was carried out and then, it was found that the yields were dependent on incident ion energies. In addition, it was clearly demonstrated that the sputtering on MgO surface leads to lower yields, which suggests that the surface plays a key role on the operating conditions, such as life time, fast response, and etc.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.714-716
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• 2005

We studied the dependence of the electrical characteristics of MgO protecting layer on temperature in an AC PDP cell. Careful measurements of the surface resistance of MgO were performed for the temperature range from room temperature to $100^{\circ}C$ with and without the VUV illumination. Experimental results show that the resistivity is affected by not only the temperature but also VUV irradiation. The measurement of wall charge distribution and the address discharge delay time as to the temperature show that the resistivity change of MgO may affect the wall voltage and consequently the discharge delay time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.47.2-47
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• 1998

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1764-1766
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• 1998

One of the most important problems in the development of AC PDP is to make long life and more stable panels. It is well known that the life time of a panel strongly depends on the sputtering-resistant property of the protecting layer such as MgO. However, the sputtering rate is so low that it is very difficult to measure the sputtering-resistant property of MgO. This paper describes a high speed measurement technique to test the sputtering-resistant property of MgO thin film by the R.F. magnetron sputtering. In this case the MgO sample has been used as a target of sputtering process. Moreover, the MgO surface changed by ion-bombarding sputtering are also discussed with SEM photoes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.209-214
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• 1999

This paper deals with the effects of activation process of MgO thin film on the dielectric characteristics of surface discharge type AC PDP. The discharge voltage decreased with increase in the MgO activation time and temperature until $400^{\circ}C$ under the condition of clean high vacuum. However, for the sample activated above $430^{\circ}C$ the discharge voltage increased. These results may be explained by the MgO morphology change and surface cleaning in the process of activation.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.142-142
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.121-124
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• 2006

A novel quantum chemical molecular dynamics program, 'Colors' was developed to simulate the electronic structure of rare earth-doped phosphor materials as well as the destruction processes of MgO protecting layer in plasma display panel (PDP). We have also developed a quantitative prediction method based on Monte Carlo simulation technique to evaluate the electrical conductivity of insulators, semiconductors, and metals as well as the spatial distribution of electron density by Colors code. All these original simulators enable us to study theoretically a variety of materials related to PDP.