• 한국초전도ㆍ저온공학회논문지
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• 제13권1호
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• pp.6-11
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• 2011

The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.49-53
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• 2022

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn_0.85Mg_0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m², 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.344-349
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• 2005

The optical and electrical characteristics of plasma display panel(PDP) using the vacuum in-line sealing technology compared with the conventional sealing process in this research. This PDP consisted of MgO protecting layer by e-beam evaporation and battier rib, transparent dielectric layer, dielectric layer, and electrodes by screen printer and then sealed off on Ne-Xe(4 ％) 400 Torr and 430。C. The brightness and luminous efficiency were good as the base vacuum level was higher, and it was to check the advantage of high vacuum level sealing, one of the strong points of the vacuum in-line sealing process. However, the brightness and luminous efficiency was dropped sharply because of a crack on MgO protecting layer by the difference of the expansion and contraction stress on high temperature in the vacuum states between MgO and substrate. Fortunately, the crack was prevented by MgO was deposited on higher temperature than 300。C. Finally, the PDP, was fabricated by the vacuum in-line sealing process, resulted the lower brightness than processing only the thermal annealing treatment in the vacuum chamber, but the luminous efficiency was increased by the reducing power consumption with the decreasing luminous current. The vacuum in-line sealing technology was not to need the additional thermal annealing process and could reduce the fabrication process and bring the excellent optical and electrical properties without the crack of MgO protecting layer than the conventional sealing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• 한국세라믹학회지
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• 제35권2호
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• pp.123-128
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• 1998

Multilayer ceramic capacitors(MLCC) were prepared by laminating the layer of composition with dif-ferent Curie temperature to improve temperature coefficient in the Pb(Mg1/3Nb2/3)O3-PbTiO3 binary system. Green sheet was formed by tape casting using Pb(Mg1/3Nb2/3)O3-PbTiO3 and PbTiO3 synthesized with solid state reaction of PBO. Nb2O5 MgO and TiO2. Green sheet with electrode of 70Ag-30Pd was laminated under 300 kg/cm2 at 70$^{\circ}C$ and sintered at 1100$^{\circ}C$ for 2hr. Curie temperatues for MLCC with 10 layers of pure PMN and 0.9PMN-0.1PT were lowered to -22$^{\circ}C$ and 36$^{\circ}C$ respectively. MLCC with 7 layers of PMN and 3 layers of 0.9PMN-0.1PT showed nearly zero temperature coefficient of capacitance in the range of -20∼30$^{\circ}C$ and sum of dissipation factor of each layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1395-1398
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• 2007

MgO thin films were deposited by e-beam evaporator using the 2-step method for alternate current plasma display panels (AC-PDPs). Glancing angle deposition (GLAD) method was employed to produce various surface geometry of the thin film; the bottom layer was deposited on a substrate by normal e-beam evaporation method and the top layer was deposited on bottom layer with $85^{\circ}$ by GLAD method. Results show that firing and sustain voltages improved as the sharpness of surface and isolated columnar structures increases, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Asian-Australasian Journal of Animal Sciences
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• 제6권3호
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• pp.411-416
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• 1993

We assessed effects of ovine luteinizing hormone (oLH) and follicle-stimulating hormone (oFSH) on the granulose and theca layers from the four largest follicles, $F_1-F_4$ of hens which had been hypophysectomized 12 h before expected ovulation. Ovine LH (0.4 mg), oFSH (0.4 mg) or oLH in combination with oFSH (0.4 mg each) was injected intravenously 6 h after hypophysectomy. Progesterone, testosterone and $estradiol-17{\beta}$ levels of the granulose and theca layers which were removed 6 h after hormone injection, were measured by radioimmunoassay. Progesterone contents of $F_1-F_3$ granulosa layer at 12 h after hypophysectomy were much lower than those of control hens. This reduced progesterone level was restored partially by the injection of oLH alone for $F_1$, while no follicles responded to oFSH treatment. In contrast, the injection of oLH in combination with oFSH resulted in high progesterone content of the granulose layer from all four follicles. Progesterone content of the theca layer was negligible in all treatments. Simultaneous injection of oLH and oFSH also elevated $estradiol-17{\beta}$ level accumulating in the theca layer from all follicles, of which much higher concentrations of $estradiol-17{\beta}$ were observed when comparison were made to each of their corresponding controls. No appreciable change in testosterone contents of two layers was observed in the present experiments. These results suggest that oFSH augments function of oLH to stimulate the production of progesterone in the granulose layer and $estradiol-17{\beta}$ in the theca layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.713-715
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• 2009

Preferred orientation of MgO protection layer is controlled via adjusting diffusion of adatom between (111) plane with highest neighbor atoms and (200) plane with lowest neighbor atoms. The diffusion of adatom could be modulated by the factors such as substrate temperature, deposition rate, and extra energy applied on adatom like ion beam energy.