• Progress in Superconductivity
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• 제5권2호
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.34-34
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• 2007

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.34-34
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• 2009

• Progress in Superconductivity
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• 제3권1호
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• pp.31-35
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• 2001

We investigated the temperature and magnetic field dependent optical properties of a$ MgB_2$ thin film in the far-infrared region. In the superconducting state, i.e. 5 K, we obtained the values of superconducting gap $2\Delta$ ~ 5.2 meV and $2\Delta$ $_{k}$ $B/T_{c}$ ~1.8. Although the value of$ 2\Delta$$B/T_{c}$ was nearly half of the BCS value, the $2\Delta$ seemed to follow the temperature dependence of the BCS formula. Under the magnetic field (H), the superconducting state became suppressed. Interestingly, we found that the normal state area fraction abruptly increased at low field but slowly increased at high field. It did not follow the H-dependences predicted for a s-wave superconductor (i.e. a linear dependence) nor for a s-wave one (i.e. $H^{1}$2/ dependence). We discussed the complex gap nature of $MgB_2$ in comparison with two gap and anisotropic s-wave scenarios.ios.

• Progress in Superconductivity
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• 제13권2호
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• pp.122-126
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• 2011

Superconducting $MgB_2$ thin films were fabricated by using a novel aerosol deposition technique wherein the pre-reacted powder is directly transformed into respective thin film. The formed thin films were characterized by X-ray diffraction technique and FE-SEM to understand its structure and morphology and the superconducting behavior has been characterized with the four probe resistivity measurement. The as-deposited thin films were formed into the frustrated amorphous structure, which were relaxed on the further heat treatment at $900^{\circ}C$ for 3 hrs. The relaxed amorphous $MgB_2$ thin films showed a comparatively high superconducting onset at about 38 K.

• 한국진공학회지
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• 제17권2호
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• pp.160-164
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• 2008

저속 에너지 도플러 넓어짐 양전자 소멸 분광법으로 $MgB_2$ 박막내의 원자 크기 정도 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여, 상전이 근처 온도에서 박막의 구조 변화를 측정하였다. 비등방성 구조로 된 $MgB_2$ 박막에서 초전도 특성을 갖는 상전이 온도 근처에서 S-변수를 측정하였다. 양전자의 입사 에너지 10keV에서 측정된 S-변수의 최고치는 박막의 온도가 30K에서 0.567이고, 50 K에서는 0.570로 큰 변화는 없었다. 이 결과로부터 양전자가 Boron 층의 초 전자와 소멸하기 보다는 Mg층 근처의 상 전자와 소멸하는 것으로 판단된다. $MgB_2$의 박막의 외층은 Mg층으로 이루어졌다고 할 수 있다.

• Progress in Superconductivity
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• 제11권1호
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• pp.8-12
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• 2009

We investigated the effects of the irradiation of light-ions on the superconducting $MgB_2$ thin films fabricated by using HPCVD. Deuterium and helium ions were irradiated on $MgB_2$ thin films by various doses, from $1{\times}10^{10}cm^{-2}\;to\;8{\times}10^{15}cm^{-2}$. During these experiments some reasonable results and unpredictable results have been obtained. The reasonable results are that the peak of the reduced maximum pinning force shifts by increasing the pinning sites in $MgB_2$ films and the slightly change of critical current density of films. We obtained some unusual results, which are the increasing of the transition temperature and the change of residual resistance ratio. Among the data of deuterium and helium ion irradiation experiments, the results of helium ion irradiation have most notable points so we will discuss mainly about helium irradiation experiments.

• Progress in Superconductivity
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• 제3권1호
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• pp.45-48
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• 2001

We have fabricated $MgB_2$thin films on (1 1 02)$ A1_2$$O_3$substrates by using a two-step method. Amorphous B thin films were deposited by a pulsed laser deposition technique and sintered in Mg vapor at various temperatures from 800 to $950^{\circ}C$. Superconducting properties of the thin films were investigated by temperature dependences of magnetization and critical current density. Structural studies were carried out by an x-ray diffraction and a scanning electron microscope. The films fabricated at $900^{\circ}C$ showed the highest transition temperature of 39 K and critical current density of ~$10^{7}$ A/$\textrm{cm}^2$ at 15 K.