• 한국초전도학회:학술대회논문집
• /
• v.16
• /
• pp.32-32
• /
• 2006

• 한국초전도학회:학술대회논문집
• /
• v.11
• /
• pp.17-17
• /
• 2001

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.355-355
• /
• 2010

The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

• Progress in Superconductivity
• /
• v.9 no.2
• /
• pp.177-182
• /
• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.213-213
• /
• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.2
• /
• pp.44-49
• /
• 2011

The films formed on AZ31B magnesium alloy were prepared from alkaline solution composed of potassium permanganate and sodium hydroxide. The immersion tests were carried out at the different concentration of sodium hydroxide and pre-treatment method in 5 minute. The morphology and the phase composition of the film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion behavior of the film in 5.0% NaCl solution was evaluated using potentiodyanmic polarization. Open circuit potential in developing film was examined with time. The thin and transparent film was mainly composed of MgO and $Mg(OH)_2$. The film with the best corrosion resistance was obtained at $70^{\circ}C$ bath temperature, 1.6 M concentration of sodium hydroxide and chemical pre-treatment.

• 한국초전도학회:학술대회논문집
• /
• v.13
• /
• pp.19-19
• /
• 2003

• 한국초전도학회:학술대회논문집
• /
• 2008.08a
• /
• pp.55-55
• /
• 2008

• Progress in Superconductivity
• /
• v.3 no.2
• /
• pp.135-139
• /
• 2002

We have fabricated high-quality c-axis-oriented $MgB_2$ thin films by using a pulsed laser deposition technique. The thin films grown on (1 1 0 2) $Al_2$$O_3$ substrates show an onset transition temperature of 39.2 K with a sharp transition width of ~0.15 K. X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface. We observed high critical current densities ($J_{c}$) of ~ 16 $MA/\textrm{cm}^2$ at 15 K and under self-field, which is comparable to or exceeds those of cuprate high-temperature superconductors. The extrapolation $J_{c}$ at 5 K was estimated to be ~ 40 MA/$\textrm{cm}^2$, which is the highest record for $MgB_2$ compounds. At a magnetic field of 5 T, the $J_{c}$ of~ 0.1 $MA/\textrm{cm}^2$ was detected at 15 K, suggesting that this compound is very promising candidate for the practical applications at high temperature with lower power consumption. As a possible explanation for the high current-carving capability, the vortex-glass phase will be discussed.d.d.d.

• 한국초전도학회:학술대회논문집
• /
• 2009.07a
• /
• pp.63-63
• /
• 2009