• 한국결정성장학회지
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• 제10권6호
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• pp.389-393
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• 2000

본 연구에서는 $\mu$-PD법으로 Er : Mg : $LiNbO_3$화이버 결정을 MgO의 첨가량을 달리하여 성장시켰으며, 첨가물 농도에 따른 성장조건과 PL 특성에 관해 조사하였다. 또한,성장한 결정의 투과 스펙트럼으로부터 Er : Mg : $LiNbO^3$에서 $Er^{3+}$ 의 에너지 준위구조를 계산하였다. Crack과 bubble등의 결함이 없는 결정은 after-beater를 조정하여 0.5 mm/min 이하의 성장속도에서 얻을 수 있었다. MgO의 농도에 따른 PL강도는 0.6 mol% $Er_2O_3$와 3 mol% MgO가 첨가된 Er : Mg : $LiNbO_3$결정에서 가장 강한 형광강도가 관측되었다. 또한, 에너지 준위 $^4S_{3/2}$에서 기저준위로 방출되는 빛이 가장 강했으며 1530 nm의 형광은 비방출천이 및 형광방출 등의 원인에 의한 $^4I_{13/2}$ 준위에서의 여기전자 감소가 형광강도 감소의 원인임을 알 수 있었다.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• 한국재료학회지
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• 제18권8호
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

• 한국결정성장학회지
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• 제9권5호
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• pp.447-453
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• 1999

Czochralski법으로 congruent한 조성(48.6 mol% $LiNbO_2$)과 $LiNbO_3$: Mg(4.5, 6.0, 10.0, 20.0mol%), $LiNbO_3$ : Mn(0.1 mol%), $LiNbO_3$: Fe(0.05 mol%), $LiNbO_3$ : (Mg(4.5)+Mn(0.1), Fe(0.05 mol%)), LiNbO3 : (Mg(20.0)+Mn(0.1), Fe(0.05 mol%))인 융액으로부터 결정을 c-축 방향으로 성장시켰다. 이 결정들은 상온에서의 XRD pattern과 상온~$1230^{\circ}C$의 온도영역과 100Hz~10MHz의 주파수영역에서의 유전상수, 상온에서의 UV_VIS, IR 스펙트럼, 결정내의 Mn2+, Fe3+ 이온에 대한 ESR 스펙트럼 등을 측정하였는데 XRD pattern과 상전이 온도, UV 흡수단, OH- 이온에 의한 스펙트럼, ESR 스펙트럼 등의 Mg첨가량 의존성으로부터 Mg가 첨가된 $LiNbO_3$ 결정의 결함구조에 대해서 논의하였다. congruent한 $LiNbO_3$결정과 Mg를 첨가한 $LiNbO_3$ 결정에서의 Mn2+ 이온은 Mg의 첨가량에 관계없이 Li+을 치환한다. 그러나 congruent한 $LiNbO_3$ 결정과 Mg를 첨가한 $LiNbO_3$ 결정에서의 Fe3+ 이온은 Mg가 4.5 mol% 첨가된 결정에서는 Li+ 자리를 Mg가 6.0 mol% 이상 첨가된 결정에서는 {{{{ { Nb}`_{Li } ^{5+ } }}}} 자리를 치환한다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.139-143
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• 1997

The doping effects of Mg and/or Fe ions on congruent LiNbO$_3$ single crystal growth were studied in order to clarify the roles of MgO in Fe doped LiNbO$_3$ single crystals. The effective distribution coefficienct of Fe was found decreased drastically from 0.85 to 0.5 by the addition of MgO into the LiNbO$_3$ melt. M ssbauer spectra revealed that the addition of MgO reduces the occurrence of Fe2+ ions during growth in air. Therefore, it is likely that there would be two important roles of MgO in Fe doped LiNbO$_3$. One is to suppress the incorporation of all Fe ions, and the other is to reduce the concentration of Fe2+ ions among the total Fe ions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.377-380
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• 2008

In this work, we measured the spatiotemporal surface charge distribution by the longitudinal electro-optic amplitude modulation method with BSO single crystal to investigate the decay and diffusion characteristics of surface charges in three types of MgO. The speed of decay and diffusion of two different kinds doped MgO is compared with those of pure MgO. The difference in the characteristics of the decay and diffusion between the electron and ion surface charges is investigated separately. We found that the rate of ion decay is the major factor that makes the difference of the temporal variation of wall voltage among different types doped MgO.

• 한국세라믹학회지
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• 제30권12호
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• pp.1029-1038
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• 1993

The microstructures of aluminas, included of dissolved CaO as $\alpha$-alumina seeded pseudo-boehmite hydrosol was gelled in plaster mold and doped of MgO as dipping of calcines(120$0^{\circ}C$-2h) into Mg-nitrate solution, were compared to the one of which additives are excluded during the gellation. It was formed the boundary layer of 300~350${\mu}{\textrm}{m}$ distance from surface to the inside, containing of approximately 500ppm CaO by dissolved Ca from plaster mold. As the MgO addition to the boundary layer with dissolved CaO, the microstructure of the layer was uniformed and inhibited the grian growth, compared to one of that additives be excluded specimen and of MgO doped-inside region. This result was considered as abnormal grain growth and effect of flat boundary formation be appeared by effects of dissolved CaO, were decreased by MgO co-doping.

• 한국세라믹학회지
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• 제44권3호
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Carbon letters
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• 제11권4호
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• pp.332-335
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• 2010

The photodegradation of the model compounds Quinol, an aromatic organic compound and Acid blue FFS, an acid dye of chemical class Triphenylmethane was studied by using illumination with UV lamp of light intensity 250W. $TiO_2$ and $TiO_2$ doped with Boron and Nitrogen was used as catalyst. The sol-gel method was followed with titanium isopropoxide as precursor and doping was done using Boron and Nitrogen. In photocatalytic degradation, $TiO_2$ and doped $TiO_2$ dosage, UV illumination time and initial concentration of the compounds were changed and examined in order to determine the optimal experimental conditions. Operational time was optimized for 360 min. The optimum dosage of $TiO_2$ and BN doped $TiO_2$ was obtained to be 2 $mgL^{-1}$ and 2.5 $mgL^{-1}$ respectively. Maximum degradation % for quinol and Blue FFS acid dye was 78 and 95 respectively, at the optimum dosage of BN-doped $TiO_2$ catalyst. It was 10 and 4% higher than when undoped $TiO_2$ catalyst was used.

• Journal of Electrochemical Science and Technology
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• 제4권3호
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• pp.102-107
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• 2013

The electrochemical properties of Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ and pure $LiFe_{0.5}Mn_{0.5}PO_4$ olivine cathodes are examined and the lattice parameters are refined by Rietveld analysis. The calculated atomic parameters from the refinement show that $Mg^{2+}$ doping has a significant effect in the olivine $LiFeMnPO_4$ structure. The unit cell volume is 297.053(2) ${\AA}^3$ for pure $LiFe_{0.5}Mn_{0.5}PO_4$ and is decreased to 296.177(1) ${\AA}^3$ for Mg-doped $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample. The doping of $Mg^{2+}$ cation with atomic radius smaller than $Mn^{2+}$ and $Fe^{2+}$ ion induces longer Li-O bond length in $LiO_6$ octahedra of the olivine structure. The larger interstitial sites in $LiO_6$ octahedra facilitate the lithium ion migration and also enhance the diffusion kinetics of olivine cathode material. The $LiFe_{0.48}Mn_{0.48}Mg_{0.04}PO_4$ sample with larger Li-O bond length delivers higher discharge capacities and also notably increases the rate capability of the electrode.