• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.136-137
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• 2002

급속도로 발전하는 정보화사회는 정보저장 및 처리에 있어서 고밀도, 대용량의 정보저장 매체를 요구한다. 따라서 3 차원적인 정보저장을 위한 연구가 활발히 진행되고 있으며, 영구적 홀 생성을 이용한 정보의 저장 및 처리도 활발히 연구되고 있는 분야 중의 하나이다. 실질적으로 응용에 필요한 실온에서의 영구적 스펙트럼 홀 생성은 희토류 금속이 첨가된 유리나 결정에서 관측되고 있는데, 이는 대부분 ＋2가 형태로 주입된 희토류 금속의 광학적 성질을 이용하는 것이다. (중략)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1526-1528
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• 2007

In this report, Manganese doped magnesium germanate ($Mg_4GeO_2:Mn$) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. Therefore, this phosphor is possible to be applicable to white LED lamp by GaN or InGaN chips.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.747-750
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• 2003

The microstructure and nonlinear properties of ZPCMR-based varistors were investigated with various additives. The density of varistors were gradually decreased for the same R in order of NiO, MgO, and $Cr_2O_3$, respectively. The ZPCR-based varistors were not affected by NiO and MgO additives in nonlinear properties, whereas greatly affected by $Cr_2O_3$. Among the ZPCCR-based varistors, ZPCCD varistor exhibited the highest nonlinear properties, in which the nonlinear exponent is in the range of $40.5{\sim}67.4$ and the leakage current is in the range of $1.2{\sim}2.7{\mu}A$.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.41-41
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.235-238
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• 2009

BaMg$Al_{10}O_{17}$ (BAM) co-doped with $Eu^{2+}$ and $Mn^{2+}$ was synthesized in a solid-state reaction and their luminescence properties were investigated as functions of the concentrations of the sensitizer and activator. BAM:$Eu^{2+}$ had a broad blue emission band at 450 nm and BAM:$Mn^{2+}$ exhibited green emission at 514 nm. The energy transfer from $Eu^{2+}$ to $Mn^{2+}$ was mainly of the resonance-type via an electric dipole-quadrupole interaction. Additionally, the addition of various fluxes such as $AlF_3$ and $BaF_2$ in the synthesis improves the moist and thermal stability. This is particularly important for the phosphor in white light emitting diodes (LEDs).

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.43-46
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• 1998

The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.396-397
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• 2006

The novel urine-activated microbatteries have been successfully demonstrated. In this microbattery, a magnesium (Mg) layer and copper chloride (CuCl) in the filter paper are used as the anode and the cathode, respectively. A stack consisting of a Mg layer, CuCl-doped filter paper and a copper (Cu) layer sandwiched between two plastic layers is hot-pressed into the microbatteries at $100^{\circ}C$. The microbatteries can be activated by adding a droplet of human urine. The experimental results show that the microbattery can deliver a maximum voltage of 1.4 V and maximum power of 1.96 mW for the $1\;k{\Omega}$ load resistor.

• 한국산학기술학회논문지
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• 제6권2호
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• pp.144-148
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• 2005

앞선 논문에서 ${K_2}O$-CaO-${P_2}{O_5}$유리의 용출 특성을 이용한 유리질 비료로서의 가능성을 보고한바 있으며, 본 연구에서는 ${K_2}O$-CaO-${P_2}{O_5}$ 조성에 식물의 성장에 필요한 미량원소인 B, Mg, Zn, Fe, Cu, Co, Mo을 첨가한 유리를 제조하였으며, 제조된 유리의 용출 특성을 pH와 ICP분석을 통하여 관찰하였다 미량원소가 첨가된 유리의 경우 첨가전의 pH값의 변화와 차이가 없었으며, 모유리의 안정화에 영향을 미치지 못함을 알 수 있었다. 첨가된 미량원소의 용출량은 모유리조성과 첨가된 함량에 비례하였으며, 이러한 원소들의 용출속도는 모유리 조성에 의하여 결정되었다.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.