• 제목/요약/키워드: Mg-SiC

검색결과 761건 처리시간 0.023초

용탕단조 Al-Cu-Si-Mg합금의 열처리시 제2응고상의 분해거동 (Decomposition Behavior of Secondary Solidification Phase During Heat Treatment of Squeeze Cast Al-Cu-Si-Mg)

  • 김유찬;김도향;한요섭;이호인
    • 한국주조공학회지
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    • 제17권6호
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    • pp.560-568
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    • 1997
  • The dissolution behavior of secondary solidification phases in squeeze cast Al-3.9wt%Cu-1.5wt%Si-1.0wt%Mg has been studied using a combination of optical microscope, image analyzer, scanning electron microscope(SEM), energy dispersive spectrometer(EDS), X-ray diffractometer(XRD) and differential thermal analyzer (DTA). Special emphasis was placed on the investigation of the effects of the nonequilibrium heat treatment on the dissolution of the second solidification phases. Ascast microstructure consisted of primary solidification product of ${\alpha}-Al$ and secondary solidification products of $Al_2Cu$, $Mg_2Si$ and $Al_2CuMg$. Equilibrium and non-equilibrium solution treatments were carried out at the temperatures of $495^{\circ}C$, $502^{\circ}C$ and $515^{\circ}C$ for 3 to 5 hours. The amount of the dissolved secondary phases increased with increasing solution treatment temperature, for example, area fractions of $Al_2Cu$, $Mg_2Si$ and $Al_2CuMg$ were approximately 0%, 1.6% and 4.2% after solution treatment at $495^{\circ}C$ for 5hours, and were approximately 0%, 0.36% and 2% after solution treatment at $515^{\circ}C$ for 5hours. The best combination of tensile properties was obtained when the as-cast alloy was solution treated at $515^{\circ}C$ for 3hours followed by aging at $180^{\circ}C$ for 10 hours. Detailed DTA and TEM study showed that the strengthening behavior during aging was due to enhanced precipitation of the platelet type fine ${\theta}'$ phase.

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The effects of Mg2Si(p) on microstructure and mechanical properties of AA332 composite

  • Zainon, Fizam;Ahmad, Khairel Rafezi;Daud, Ruslizam
    • Advances in materials Research
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    • 제5권1호
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    • pp.55-66
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    • 2016
  • This paper describes a study on the effects of $Mg_2Si_{(p)}$ addition on the microstructure, porosity, and mechanical properties namely hardness and tensile properties of AA332 composite. Each composite respectively contains 5, 10, 15, and 20 wt% reinforcement particles developed by a stir-casting. The molten composite was stirred at 600 rpm and melted at $900^{\circ}C{\pm}5^{\circ}C$. The $Mg_2Si$ particles were wrapped in an aluminum foil to keep them from burning when melting. The findings revealed that the microstructure of $Mg_2Si_{(p)}/AA332$ consists of ${\alpha}$-Al, binary eutectic ($Al+Mg_2Si$), $Mg_2Si$ particles, and intermetallic compound. The intermetallic compound was identified as Fe-rich and Cu-rich, formed as polygonal or blocky, Chinese script, needle-like, and polyhendrons or "skeleton like". The porosity of $Mg_2Si_{(p)}/AA332$ composite increased from 8-10% and the density decreased from 9-12% from as-cast. Mechanical properties such as hardness increased for over 42% from as-cast and the highest UTS, elongation, and maximum Q.I were achieved in the sample of 10% $Mg_2Si$. The study concludes that combined with AA332, the amount of 10 wt% of$Mg_2Si$ is a suitable reinforcement quantity with the combination ofAA332.

Electrical Insulation Properties of Nanocomposites with SiO2 and MgO Filler

  • Jeong, In-Bum;Kim, Joung-Sik;Lee, Jong-Yong;Hong, Jin-Woong;Shin, Jong-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제11권6호
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    • pp.261-265
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    • 2010
  • In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

펄스레이저를 이용한 $MgTiO_3$ 박막의 성장 및 특성

  • 강신충;임왕규;이재찬
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.68-68
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    • 2000
  • 펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

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액상가압성형 공정을 이용한 SiC 연속섬유 강화 마그네슘 복합재료 개발 (Development of Continuous SiC Fiber Reinforced Magnesium Composites Using Liquid Pressing Process)

  • 조승찬;이동현;이영환;신상민;고성민;김정환;김양도;이상관;이상복
    • Composites Research
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    • 제33권5호
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    • pp.247-250
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    • 2020
  • 본 연구에서는 액상가압성형 공정을 이용하여 SiC 연속섬유가 강화된 마그네슘 복합재료의 제조 가능성을 검토하였다. 액상가압성형 공정을 이용하여 SiC 섬유가 균일 분산된 AZ91 복합재료를 제조하였으며 열처리를 통하여 석출상을 제어하였다. SiC 섬유와 기지합금의 계면에 연속적인 Mg2Si상이 형성되면서 계면 결합력이 향상되었고, 제조된 복합재료의 상온 인장강도는 479 MPa로 우수한 기계적 특성을 나타내었다.

불소운모 합성에 따른 $K_2O-MgO-Al_2O_3-SiO_2-MgF_2$계의 연구 (The Study of $K_2O-MgO-Al_2O_3-SiO_2-MgF_2$ System in Fluro-phlogopite Synthesis.)

  • 송경근;오근호;김대웅
    • 한국세라믹학회지
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    • 제20권1호
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    • pp.37-42
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    • 1983
  • An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

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Effects of Surface Pretreatment on Deposition and Adhesion of Electrophoretic Paint on AZ31 Mg Alloy

  • Nguyen, Van Phuonga;Moon, Sungmo
    • 한국표면공학회지
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    • 제50권2호
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    • pp.72-84
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    • 2017
  • In this work, electrophoretic paint (E-paint) was deposited on AZ31 Mg alloy after four different surface pretreatments: knife abrading, SiC paper abrading, deionized (DI) water immersion and NaOH immersion. The deposition process of E-paint was studied by analyses of voltage-time and current-time curves, amount of deposited paint, current efficiency and surface oxide film resistance and the adhesion of E-paint was examined by tape test before and after immersion in DI water for 500 h at $40$^{\circ}C$. It was found that the induction time for the deposition, the amount of deposited paint and the current efficiency are inversely proportional to the resistances of surface films prepared by different surface pretreatment methods. The electrophoretic painting showed longer inductance time, larger amount of deposited paint and higher current efficiency on the highly conducting surfaces, such as knife-abraded and SiC-abraded surfaces than on the less conducting surfaces, such as DI water-immersed and NaOH-immersed samples. Excellent adhesion was observed on the E-paintings deposited onto knife-abraded and SiC-abraded AZ31 Mg alloy samplesSiC-abraded AZ31 Mg alloy samples.

고온가압소결한 SiCf/SiC 복합체에서 보호층으로써의 SiC 층이 기계적 물성에 미치는 영향

  • 정명훈;김대종;김원주;윤순길;박지연
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.105.1-105.1
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    • 2012
  • 고온가압소결으로 제조된 SiCf/SiC 복합체는 부식과 침식에 강하고 우수한 열적 성질과 고온에서의 높은 기계적 강도를 유지하는 장점을 가진 복합체다. 복합체의 파괴인성은 섬유와 기지 사이에 존재하는 열분해탄소 (PyC) 계면층에 의해 큰 영향을 받는데, 고온가압소결중 첨가되는 소결조제 ($Y_2O_3$, MgO, $Al_2O_3$)와 반응하여 계면이 손상되어 복합체의 기계적 특성치가 낮아지는 결과를 보였다. 본 연구에서는 계면의 손상을 보호하고자 PyC 계면상 위에 SiC 층을 증착하였는데 계면층과 SiC 층의 증착은 화학기상 증착법(CVD)을, 기지채움 공정은 전기영동법(EPD)과 고온가압소결방법(Hot Pressing)을 이용하여 복합체를 제조하였다. Tyranno-SA 섬유에 소스가스인 메탄을 열분해 하여 200nm 두께로 PyC 계면상을 증착하고, 두께를 달리하여 보호층으로써의 SiC 층을 single 과 double layer로 증착하였다. SiC 나노분말과 소결 첨가제인 $Y_2O_3$, $Al_2O_3$, MgO를 첨가한 슬러리를 전기영동법(EPD)을 이용하여 섬유내부에 슬러리를 함침시켰고, 이러한 프리폼을 $1750^{\circ}C$/20MPa의 조건으로 고온 가압소결 하여 $SiC_f$/SiC 복합체를 제조하였다. 이렇게 single layer와 double layer로 제조된 $SiC_f$/SiC 복합체에 대해 밀도와 미세구조를 관찰하였고, 기계적 특성을 비교하여 보호층으로써의 SiC 증착효과를 고찰하고자 하였다.

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MgO첨가 Mullite질회로기판의 소결성 (Sinterability of MgO added mullite based ceramic substrates)

  • 임병오
    • E2M - 전기 전자와 첨단 소재
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    • 제6권5호
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    • pp.470-475
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    • 1993
  • 1150, 1450, 1600.deg.C에서 MgO-SiO$_{2}$-Al$_{2}$O$_{3}$계를 유리성분으로 하는 mullite-glass질 회로기판재료의 소결거동에 미치는 MgO첨가량과 소성시간에 따른 영향을 조사하였으며 주로 소성시간이 밀도, 기공분포, 미세구조 및 생성상에 미치는 영향을 조사하였다. 1150.deg.C에서는 MgO의 첨가량에 관계없이 소결이 진행되지 않았으며 1450.deg.C에서는 MgO첨가량에 따라 소결속도가 증가하였다. 1600.deg.C에서는 각조성의 시료 모두가 빨리 과소성단계에 도달하였다. 1450.deg.C에서는 MgO 0.85% 첨가했을때 소성시간에 따라 기공량은 감소하는 반면 기공경은 일정하게 증가하였다. 먼저 .alpha.-SiO$_{2}$가 cristobalite로 전이한 후에 MgO와 반응하여 유리상으로 된다.

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Preparation and Characterization of Porous Silicon and Carbon Composite as an Anode Material for Lithium Rechargeable Batteries

  • Park, Junsoo;Lee, Jae-Won
    • 한국분말재료학회지
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    • 제22권1호
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    • pp.15-20
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    • 2015
  • The composite of porous silicon (Si) and amorphous carbon (C) is prepared by pyrolysis of a nano-porous Si + pitch mixture. The nano-porous Si is prepared by mechanical milling of magnesium powder with silicon monoxide (SiO) followed by removal of MgO with hydrochloric acid (etching process). The Brunauer-Emmett-Teller (BET) surface area of porous Si ($64.52m^2g^{-1}$) is much higher than that before etching Si/MgO ($4.28m^2g^{-1}$) which indicates pores are formed in Si after the etching process. Cycling stability is examined for the nano-porous Si + C composite and the result is compared with the composite of nonporous Si + C. The capacity retention of the former composite is 59.6% after 50 charge/discharge cycles while the latter shows only 28.0%. The pores of Si formed after the etching process is believed to accommodate large volumetric change of Si during charging and discharging process.