• Title/Summary/Keyword: Mg-Si-O

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Study on electrical properties of BST thin film with substrates (기판에 따른 BST 박막의 전기적 특성에 관한 연구)

  • 이태일;최명률;박인철;김홍배
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.135-140
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    • 2002
  • In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

Growth and dissolution behavior of $CaO{\cdot}6Al_2O_3$ phase by reaction between alumina and silicate liquid phase (알루미나와 실리케이트 액상간의 반응에 따른 $CaO{\cdot}6Al_2O_3$ 상의 성장 및 용해 거동)

  • 백용균;박상엽
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.3
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    • pp.291-298
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    • 1995
  • Abstract The growth and dissolution behaviour of reaction phase was studied during dissolution reaction between sintered alumina and $CaMgSiO_4$ at $1600^{\circ}C$ for various times. The formation of $CaO{\cdot}6Al_2O_3$ an intermediate reaction phase, and $CaMgSiO_4$ spinel, the final reaction product were observed during dissolution reaction of alumina into $CaMgSiO_4$ liquid phase. The growth and dissolution shape of $CaO{\cdot}6Al_2O_3$, an intermediate phase, was quite different.

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Dissolution Properties of K2O-CaO-MgO-SiO2-P2O5 Glasses (K2O-CaO-MgO-SiO2-P2O5계 유리의 제조 및 용출특성)

  • 이용수;윤태민;강원호
    • Journal of the Korean Ceramic Society
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    • v.40 no.11
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    • pp.1132-1137
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    • 2003
  • For the application of environment conscious glass-fertilizer, dissolution characteristics of phosphate glass was investigated. In 0.1K₂O-0.1SiO₂-0.6P₂O/sub 5/ glass system, the compositions were designed according to variation of CaO & MgO contents, and glass formation region was confirmed. From the glass composition, the confirmed glasses were investigated to figure out thermal and dissolution properties. It was detected that glass transition & softening temperature of the glasses increased with increasing MgO contents. The dissolution properties of the glasses was affected by CaO and MgO content ratio.

Photoluminescence Characteristics of (Ca, Sr)2MgSi2O7:Eu2+ Phosphor Particles Prepared by Spray Pyrolysis (분무열분해법에 의해 제조된(Ca, Sr)2MgSi2O7:Eu2+ 형광체의 발광 특성)

  • Lee, Ho Min;Jung, Kyeong Youl;Jung, Ha-Kyun;Lee, Jong Heun
    • Korean Chemical Engineering Research
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    • v.44 no.3
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    • pp.284-288
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    • 2006
  • $(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ (CMS) phosphor particles were prepared by using a spray pyrolysis process. The luminescent property was optimized by changing the content of Eu and the post-treatment temperature. The luminescence characteristics were also monitored with changing the ratio of Ca to Sr. The pure tetragonal $Ca_2MgSi_2O_7$ or $Sr_2MgSi_2O_7$ particles were obtained when the post-treatment temperature was over $1,000^{\circ}C$. The highest emission intensity of CMS particles were achieved when the concentration (y) of Eu and the treatment temperature were 0.05 and $1,250^{\circ}C$,respectively. The emission wavelength $({\lambda}_{max})$ of ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$ was gradually shifted from 524 nm to 456 nm with increasing the content of Sr due to the reduction of crystal field strength. The emission intensity and its width of $Sr_2MgSi_2O_7:Eu$ was greatly enhanced by substituting Ca of less than 10 mol% for Sr without any significant peak shift. The morphology of as-prepared particles was spherical, but changed to irregular-shaped one after the post treatment at the temperature range from 900 at $1,300^{\circ}C$.

Wear Mechanisum of Carbon Bearing BOF Refreactories (전로용 MgO-C질 내화벽돌의 손상요인)

  • 김의훈;오영우;이철수;김종성;김종희
    • Journal of the Korean Ceramic Society
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    • v.23 no.1
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    • pp.51-59
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    • 1986
  • It was the first time the MgO-C brick was developed for the lining materials in the hot spots in electric are furnace in 1972. MgO-C brick is high registant to thermal and structural spalling. Futhermore for the reason that carbon is hard to react with slag and MgO is high fireproof MgO-C brick shows a high corrosion registance to slag attack compared with conventional basic refractories. Owing to their excellent properties the use of MgO-C refractories are being developed widely in the field of shaped refractories and even in that of monolithic refractories. In this paper the oxidation of carbon the infiltration of slag into the brick texture and effects of additions were investigated. The results obtained were as follows : 1) The use of fused MgO-clinker and high purity carbon as raw materials increased the corosion registance and hot modulus of rupture of MgO-C brick. 2) As the oxidation reaction of the carbon proceeded the slag infiltrated into the brick texture. And then the slag components reacted with the MgO grains and formed low melting point compounds particulary CaO.MgO.$SiO_2$ and 3CaO.MgO.$2SiO_2$ that resulted in the wear of the brick. 3) It is recongnized the Al, Si, $B_3C$ effects on the oxidation registant properties of MgO-C brick by contribu-ting to the decrease of permeability according to the formation of $Al_4C_3$, SiC, $B_2O_3$ and the decrease of open pores relating to the formation of MgO.Al2O3, $SiO_2$, 3MgO.$B_2O_3$ at the decarbonized layer.

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Properties of Pb(Zr, Ti)$\textrm{O}_3$ Ferroelectric Thin Films on MgO/Si Substrate by RF Sputtering (RF 스퍼터링에 의해 MgO/Si 기판위에 증착된 Pb(Zr, Ti)$\textrm{O}_3$ 강유전체 박막의 특성연구)

  • Jang, Ho-Jeong;Seo, Gwang-Jong;Jang, Ji-Geun
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1170-1175
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    • 1998
  • PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

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Acid Structure of MgO-SiO₂Binary Oxide Catalyst and Activity for Acid Catalysis

  • 손종락;박은희;김하원
    • Bulletin of the Korean Chemical Society
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    • v.18 no.2
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    • pp.203-208
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    • 1997
  • A series of MgO-SiO2 catalysts were prepared by coprecipitation from the mixed solution of magnesium chloride and sodium silicate. Some of the sample were modified with 1 N H2SO4 and used as modified catalysts. The addition of MgO to SiO2 caused the increase of acidity and the shift of O-H and Si-O stretching bands of the silanol group to a lower frequency in proportion to the MgO content. The acid structure of MgO-SiO2 agreed with that proposed by Tanabe et al.. Catalytic activity for 2-propanol dehydration increased in relation to the increase of acidity and band shift to a lower frequency.

Oxidation Resistance and Electrical Conductivity of $Ti_3SiC_2$ with Thin Oxide Layer

  • Hwang, Sung-Ik;Han, Kyoung-Ran;Kim, Chang-Sam
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1110-1111
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    • 2006
  • [ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

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