• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.147-154
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• 2017

This research was conducted to investigate the electrochemical properties of the thin air-formed oxide film-covered AZ31 Mg alloy. Native air-formed oxide films on AZ31 Mg alloy samples were prepared by knife-abrading method and the changes in the electrochemical properties of the air-formed oxide film were investigated in seven different electrolytes containing the following anions $Cl^-$, $F^-$, $SO{_4}^{2-}$, $NO_3{^-}$, $CH_3COO^-$, $CO{_3}^{2-}$, and $PO{_4}^{3-}$. It was observed from open circuit potential (OCP) transients that the potential initially decreased before gradually increasing again in the solutions containing only $CO{_3}^{2-}$ or $PO{_4}^{3-}$ ions, indicating the dissolution or transformation of the native air-formed oxide film into new more protective surface films. The Nyquist plots obtained from electrochemical impedance spectroscopy (EIS) showed that there was growth of new surface films with immersion time on the air-formed oxide film-covered specimens in all the electrolyte. The least resistive surface films were formed in fluoride and sulphate baths whereas the most protective film was formed in phosphate bath. The potentiodynamic polarization curves illustrated that passive behaviour of AZ31 Mg alloy under anodic polarization appears only in $CO{_3}^{2-}$, or $PO{_4}^{3-}$ ions containing solutions and at more than $-0.4V_{Ag/AgCl}$ in $F^-$ ion containing solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1758-1760
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• 1998

MgO Protecting layer in AC PDP prevents ion bombardment in discharge plasma. The MgO layer also has the additional importance in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protecting layer is mainly prepared by E-beam Evaporation. However, the optimum activation manufacturing process of MgO thin film wasn't well known. Therefore in this study, after MgO protecting layer is prepared on dielectric layer by E-beam evaporation and liquid MgO spin coating, we carried out activation process of MgO thin film as a parameter of Temperature, Operating time and Operating pressure. In addition, discharge characteristics are also studied as a parameter of activation conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.899-901
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• 2009

The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2022.04a
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• pp.93-94
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• 2022

The presence of chloride (Cl-) ions in environments causes localized corrosion resulting decrease the durability of the structures. In this study, 5% Mg containing Al alloys (Al-5Mg) wire used vis-à-vis compared its corrosion resistance with pure Al in 3.5wt.% NaCl solution with exposure periods. Initially both wires exhibited identical open circuit potential (OCP) attributed to the presence of native oxide film on the surface but with the exposure periods it shifted towards active direction owing to the dissolution of oxide film. The pure Al continuously shifted the OCP towards active direction while Al-5Mg shows stabilization of OCP after 8 days of exposure. The OCP of Al-5Mg is slightly higher compared to pure Al wire owing to the activeness of Mg. The total impedance of the Al-5Mg alloy is almost three times greater than pure Al with exposure periods in 3.5 wt.% NaCl solution. It might be formation of Al-Mg LDH (layered double hydroxide) thin film onto the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.60-64
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• 2003

In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.