• Bulletin of the Korean Chemical Society
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• v.27 no.4
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• pp.596-598
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.148-155
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• 1995

(1) The metastable crystalline(MX) phases formed by ion mixing are classified into 5 types, i.e. the super-saturated solid solutions and the enlarged HCP-I phases reported earlier, and the newly observed FCC-I phases in hcp-based alloys, The FCC-ll and HCP-ll phases in bcc-based alloys. The growth kinetics of the MX phases is discussed. (2) The interfacial free energy in the multilayered films was found to play an important role in ion beam mixing(IM) induced amorphization. By adding sufficient interfaces, amorphous alloys were obtained even in the systems with rather positive heat of formation. (3) Gibbs free energy diagrams of some representative systems were constructed, by calculating the free energy curves of all the competing phases. Steady-state thermal annealing was conducted and the results confirmed the relevance of the constructed diagrams, which were inturn employed to interpret the MX phase formation as well as the glass forming ability upon IM in the binary metal systems.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.18-22
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• 2003

The optogalvanic effect is proposed and demonstrated as a technique for Penning ionization in a discharge of mixtures of metal vapors and rare gases. The gadolinium and argon mixture is used as a prototype. The lowest metastable of argon, 3P$_2$ (ls$\_$5/ in Paschen notation) at 93144 cm$\^$-1/, is within kT from the excited states of Gd ion. Thus Penning ionization occurs to an excited states of the ion. This process strongly alters the optogalvanic signal and has its own signatures.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.158-158
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• 1995

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.5-9
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• 2004

In this paper, pulsed discharge is used to control the luminous color in gas discharge tubes. The luminous color of the positive column in gas discharge tubes filled with Hg-Ar-Ne (1: 9, 60［Torr］) and having no phosphor material, varies from red to blue emitted by the Ne and Hg from the pulsed discharge. With changing of pulse-width and frequency, the electron temperature in the transient period affects changes to the residual ion and metastable atom densities. The first metastable atoms containing energy levels of about 16.6 ［eV］have a very high probability that a collision will result in the ionization potential of Ar being 15.8 [eV]. The change of locus in the CIE chromaticity diagram with increasing pulse-width and frequency approves the variation of luminous color.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.410-414
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• 1998

The dependence of substrate material and electrode position were studied by radiation analysis of Ar discharge, and electron beam radiation was applied to confirm the crosslinked structure of the film. Comparing the conductor substrate with the insulator substrate, the former had lager peak density of radiation spectrum than latter. From the result of peak density of metastable state and ion, it was confirmed that the peak density of ion was falling to the down limit with increasing the distance of electrode by analyzing the radiation spectrum of polymerized films. When the polymerized styrene films was exposed to electron beam, it was possible to form a pattern with the insulator substrate.

• Journal of Surface Science and Engineering
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• v.41 no.5
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• pp.205-213
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• 2008

A 3D particle code is developed to analyze electron behavior in a planar magnetron sputtering cathode either in balanced or unbalanced configuration. Three types of collisions are included; electron - neutral elastic, excitation to a metastable state and ionization. Flight path is calculated by a 4-th order Runge-Kutta method with a time step of 10 ps. Effects of electron starting position, magnetic field intensity and configuration were analyzed. For a more efficient and accurate modeling, multithreading technique is considered for multicore CPU computers. Under an assumption of cold ion approach, target erosion profiles are predicted for a flat target surface.