• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.48-53
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• 2007

In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.599-602
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• 2005

In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of electromagnetic engineering and science
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• v.9 no.4
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.25-33
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• 2007

In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.765-768
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• 2005

In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.6 s.336
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• pp.67-74
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• 2005

In this paper, high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a $\lambda$/4 transmission line. The simulation results of the designed 94 GHz balun show return loss of -27.9 dB, coupling of -4.26 dB, and thru of -3.77 dB at 94 GHz, respectively. The isolation and phase difference were 23.5 dB and $180.2^{\circ}$ at 94 GHz. The W-band MIMIC single-balanced mixer was designed using the 0.1 $\mu$m InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency(fT) of 189 GHz and the maximum oscillation frequency(fmax) of 334 GHz. The designed MIMIC single-balanced mixer was fabricated using 0.1 $\mu$m MHEMT MIMIC Process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. Pl dB(1 dB compression point) of input and output were 10 dBm and -13.9 dBm respectively. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.