• Journal of Powder Materials
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• v.22 no.6
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• pp.426-431
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• 2015

Microstructural examination of the Nb-Si-B alloys at Nb-rich compositions is performed. The Nb-rich corner of the Nb-Si-B system is favorable in that the constituent phases are Nb (ductile and tough phase with high melting temperature) and $T_2$ phase (very hard intermetallic compound with favorable oxidation resistance) which are good combination for high temperature structural materials. The samples containing compositions near Nb-rich corner of the Nb-Si-B ternary system are prepared by spark plasma sintering (SPS) process using $T_2$ and Nb powders. $T_2$ bulk phase is made in arc furnace by melting the Nb slug and the Si-B powder compact. The $T_2$ bulk phase was subsequently ball-milled to powders. SPS is performed at $1300^{\circ}C$ and $1400^{\circ}C$, depending on the composition, under 30 MPa for 600s, to produce disc-shaped specimen with 15 mm in diameter and 3 mm high. Hardness tests (Rockwell A-scale and micro Vickers) are carried out to estimate the mechanical property.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.14-17
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• 1999

Tin oxide films as an anode layer for microbatteries were deposited by using rf magnetron sputtering. Characterization of the films was carried out in terms of working pressure in the range of 5~30 mtorr. Rf power and substrate temperature during deposition were fixed at 2.5W/$\textrm{cm}^2$ and A.T., respectively. The crystal orientation of $SnO_2$films was changed from (110) to (101) or (211) with the increasing working pressure. Refractive index and film density of the films also decreased with the increasing working pressure. The $SnO_2$ thin film formed under optimum conditions was found to have a reversible capacity of 446.9$\mu$Ah/$\textrm{cm}^2$-$\mu\textrm{m}$ and good reversibility when the working pressure was fixed at 10mtorr. As the working pressure decreased, film density increased. It was thought that the capacity of $SnO_2$films increased due to the increase in the amount of active materials which can react with Li electrochemically. Furthermore, cycle characteristics of the anode material was also influenced by film stress.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.172-176
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• 2000

Solid solutions of Ti$_{0.5}$Zr$_{0.5}$B$_2$were successfully synthesized and densified simultaneously from elemental reactants by the use of a field-activated, pressure-assisted synthesis method. The method involves the application of an electric current and mechanical pressure across reactant compacts to achieve combustion synthesis. Dense solid solutions with relative densities of up to 99% were produced and characterized by XRD, SEM, and EPMA methods. With a maximum measured temperature of 145$0^{\circ}C$ under a load of 86 MPa for 30 min, the desired dense solid solution wad synthesized.

• Journal of the Korean Society of Safety
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• v.32 no.1
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

• Journal of Electrochemical Science and Technology
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• v.7 no.2
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• pp.115-131
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• 2016

Though battery chemistry and technology had been developed for over a hundred years back, increase in demand for storage energy, in the computer accessories, cell phones, automobile industries for future battery car and uninterrupted power supply, has made, the development of existing and new battery, as an emerging areas of research. With innovation of high energetic inexpensive Nano structure materials, a more energy efficient battery with lower cost can be competitive with the present primary and rechargeable batteries. Materials electrochemistry of electrode materials, their synthesis and testing have been explained in the present paper to find new high efficient battery materials. The paper discusses fundamental of electrochemistry in finding true cell potential, overvoltages, current, specific energy of various combinations of anode-cathode system. It also describes of finding the performance of new electrode materials by various experiments viz. i. Cyclic Voltammetry ii. Chronoamperometry iii. Potentiodynamic Polarization iv. Electrochemical Impedance Spectroscopy (EIS). Research works of different battery materials scientists are discussed for the development of existing battery materials and new nano materials for high energetic electrodes. Problems and prospects of a few promising future batteries are explained.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.584-590
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• 1998

The microstructures of finely distributed Si-phases in $\beta$-$FeSi_2$ thermoelectric matrix, were produced by heat-treating the melt-cast ingots of single $\alpha$-$Fe_2Si_5$ phase at 730~85$0^{\circ}C$ for 4~20 hours, or by resistance-hot-pressing the mechanically alloyed powders ordinarily consisting of $\varepsilon$-FeSi and Si phases at 760~85$0^{\circ}C$ for 10 minutes of composition. $(Fe_{0.98}Mn_{0.02})_xSi_2(x{\leq$}1) The size and interspacing of dispersed Si-phases were able to control within a range of 0.05~0.27$\mu\textrm{m}$ and 0.2~0.6$\mu\textrm{m}$ by variations of heat treatment temperature and sintering temperature as well as the composition. respectively. The dispersion of Si- phases was expected to be effective for the reduction of thermal conductivity responsible for the increment of thermoelectric figure of merit.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.654-659
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• 1997

HMDS[Si$_{2}$(CH$_{3}$)$_{6}$]단일 선구체를 이용하여 화학증착 방법으로 성장된 3C-SiC/Si(001) 이종접합박막의 특성을 XRD, 라만 스펙트럼 및 투과전자현미경(TEM)등을 이용하여 조사하였으며 시판되고 있는 상용 3C-SiC/Si 시편을 같은 방법으로 분석하여 특성을 비교검토하였다. $C_{3}$H$_{8}$-SiH$_{4}$-H$_{2}$혼합가스를 선구체로 이용하여 5$\mu\textrm{m}$두께로 성장된 상용 3C-SiC/Si 이종접합박막 시료의 XRD스펙트럼에서는 강한 3C-SiC(002)피크 만이 관찰되었으며, 라만 스펙트럼의 LO피크는 970nm$^{-1}$ 정도에서 강하게 나타났다. TEM 관찰 결과 다수의 전위, 쌍정, 적층결함 및 APB와 같은 결정결함들이 3C-SiC/Si 계면 근처에 집중적으로 분포되어 있었으며 성장된 박막은 단결정임을 확인할 수 있었다. 선구체로 HMDS를 사용하여 0.3$\mu\textrm{m}$ 및 2$\mu\textrm{m}$ 두께로 성장시킨 3C-SiC/Si 박막 시료의 XRD 스펙트럼은 다소 완만한 3C-SiC(002) 피크와 함께 3C-SiC(111)피크가 관찰되었으며, TEM으로 확인한 결과 소경각 결정립들이 약 5˚-10˚ 정도 방위차를 가지고 성장하여 기둥구조(columnar structure)를 이루고 있기 때문임을 알 수 있었다. 라만 스펙트럼 분석 결과 박막의 LO 피크가 967-969nm$^{-1}$정도로 다소 낮은 wavenumber쪽으로 이동되어 박막 내에 상당한 응력이 존재함을 확인할 수 있었다. 이와 같은 HMDS 3C-SiC박막의 특성은 성장 온도가 낮고 박막 성장용 가스로 사용한 HMDS 선구체에서 탄소가 과잉으로 공급되기 때문으로 제안되었다.다.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.345-353
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• 2001

The present study was carried out to investigate the effect of zirconium addition to $Al_3$Nb intermetallic on the crystal structural modification and microstructural characterization of $Al_3$Nb intermetallic. Elemental Al, Nb, Zr powders and arc melted $Al_3$Nb and $Al_3$Zr intermetallic mixed powders were used as starting materials. MA was carried out in an attritor rotated with 300 rpm for 20 hours. The behavior of MA between two starting materials was some-what different in which the value of internal strain of the elemental powders was higher than that of the intermetallic powder. The intermetallic powder was much more disintegrated during the MA processing. In the case of the elemental powders, AlNb$_2$ phase were transformed to Al(Nb.Zr)$_2$ as a result of ternary addition of Zr element. With the successive heat treatment at 873K for 2 hours, the Al(Nb.Zr)$_2$ phase was transformed to more stable $Al_3$(Nb.Zr) phase. This transformation was clearly confirmed by the identification of X-ray peak position shift. On the other hand, in the carte of the intermetallic powder, there was no evidence of phase transformation to other ternary intermetallic compounds or amorphous phases, even in the case of additional heat treatment. However, nano-sized intermetallic with $Al_3$Nb and $Al_3$Zr were just well distributed instead of phase transformation.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.