• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.161-166
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.687-689
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• 1995

Our team works on mixture of hard magnetic materials. As hard magnetic material we used mixture of powders: melt-spun ribbon Nd-Fe-B, ferrite and Alnico. Their different mixtures are basic material for dielectromagnets under our investigation. Main disadvantage of dielectromagnets with Nd-Fe-B alloy powder as a component is a low corrosion resistance. Protection against corrosion is covering dielectromagnets with metallic or organic coating film. The coating film protects dielectromagnets from free particles on the surface and low resistance for mechanical stresses too. The surface of dielectromagnets prepared from mixture of powders if formed by metallic particles - powder of Nd-Fe-B and Alnico, particles of oxide - powder of ferrite and particles of resin - bonding materials. Team work on technology of laying the metallic coating on dielectromagnets prepared from mixture of mentioned powders. Papers show the results of initial investigation on metallic coating technology. It shows influence of type and used technology of the metallic coating film on magnetic properties of dielectromagnets.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.110-114
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• 2011

Polymeric films of high chemical stability and mechanical strength covered with a thin metallic film have been extensively used in various fields as electric and electronic materials. In this study, we have chosen polypropylene (PP) as the polymer due to its outstanding chemical resistance and good creep resistance. We coated thin nickel film on PP films by the electroless plating process. The surfaces of PP films were pre-treated and modified to increase the adhesion strength of metal layer on PP films, prior to the plating process, by an environment-friendly process with atmospheric plasma generated using dielectric barrier discharges in air. The surface morphologies of the PP films were observed before and after the surface modification process using a scanning electron microscope (SEM). The static contact angles were measured with deionized water droplets. The cross-sectional images of the PP films coated with thin metal film were taken with SEM to see the combined state between metallic and PP films. The adhesion strength of the metallic thin films on the PP films was confirmed by the thermal shock test and the cross-cutting and peel test. In conclusion, we made a composite material of metallic and polymeric films of high adhesion strength.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.688-691
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• 1997

Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.646-648
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• The korean journal of orthodontics
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• v.9 no.1
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• pp.23-35
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• 1979

The present study has the purpose of investigating various growth and developmental aspects of rabbit snout with the aid of metallic implantation and of improving on the indirect method of growth and developmental studies of its skull. Sixty-eight growing albino rabbits were used. A head holder, film holder, cephalometer, metallic implanting device and implant materials were designed and constructed by the author. Eight metallic pins were implanted with a metallic implanting device in the rabbit snout under general anesthesia. Two metallic pins were implanted on each side of the interfrontal suture and another two were put on each side of the internasal suture near the frontonasal suture. Serial cephalograms were taken with a two-week interval, using the head holder, film holder and cephalometer. Eight items of linear measurement were obtained from the film. On the base of the results of the study, the following conclusions are obtained: 1. The metallic implant method is better than the other indirect methods for growth and developmental studies of the rabbit skull. 2. Most of the vertical growth of the rabbit snout is due to sutural growth at the frontonasal suture and the horizontal growth is at the interfrontal and the internasal suture. 3. The vertical growth of the rabbit snout is greater than the horizontal growth. 4. The horizontal growth of the rabbit snout is greater at the nasal bone than at the frontal bone. 5. The amount of vertical growth of the rabbit snout is almost same at inner and outer side of the interfrontal and internasal suture line, 6. Growth rate of the sutural growth of the rabbit snout tends to decrease by the growth of the rabbit. 7. Implant materials do not disturb growth and development of the rabbit snout, except a slight trauma effect during the first week of metallic implantation.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Corrosion Science and Technology
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• v.5 no.5
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• pp.153-159
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• 2006

Austenitic stainless steels with addition of various amounts of Mo and W were evaluated in terms of corrosion and contact resistance to determine optimum alloy composition of metallic bipolar plate for PEMFC. The corrosion property was evaluated by both acid fume exposure test at $130^{\circ}C$ and by electrochemical polarization tests in $H_3PO_4$ solution at $80^{\circ}C$. Austenitic stainless steel with proper amount of Mo and W demonstrated not only good corrosion resistance but also low contact resistance. Analyses on the passive film show that partial substitution of Mo by W enhances passive film stability and repassivation property. Test results suggest that austenitic stainless steel with 2 wt%Mo and 4 wt%W has optimum composition for metallic bipolar plate used in PEMFC.