• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• International Journal of Contents
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• v.8 no.2
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• pp.52-59
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• 2012

This study uses digital imaging and communications in medicine (DICOM) files acquired after CT scan to obtain the absorbed dose distribution inside the body by using the patient's actual anatomical data; uses geometry and tracking (Geant)4 as a way to obtain the accurate absorbed dose distribution inside the body. This method is easier to establish the radioprotection plan through estimating the absorbed dose distribution inside the body compared to the evaluation of absorbed dose using thermo-luminescence dosimeter (TLD) with inferior reliability and accuracy because many variables act on result values with respect to the evaluation of the patient's absorbed dose distribution in diagnostic imaging and the evaluation of absorbed dose using phantom; can contribute to improving reliability accuracy and reproducibility; it makes significance in that it can implement the actual patient's absorbed dose distribution, not just mere estimation using mathematical phantom or humanoid phantom. When comparing the absorbed dose in polymethly methacrylate (PMMA) phantom measured in metal oxide semiconductor field effect transistor (MOSFET) dosimeter for verification of Geant4 and the result of Geant4 simulation, there was $0.46{\pm}4.69%$ ($15{\times}15cm^2$), and $-0.75{\pm}5.19%$ ($20{\times}20cm^2$) difference according to the depth. This study, through the simulation by means of Geant4, suggests a new way to calculate the actual dose of radiation exposure of patients through DICOM interface.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.18-19
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• 2017

This paper shows the design of the high voltage capacitor charger which using a modified series parallel resonant converter. The used silicon carbide Metal-Oxide Semiconductor Field Effect Transistor (SiC MOSFET) is proper for the few hundred kHz of high switching frequency to overcome the bulk resonant inductor and snubber capacitors. Furthermore, to increase the amount of the charging current, three phase delta transformer is used as well as the secondary sides are connected in parallel. In this paper, the design procedure of the high voltage capacitor charger is suggested and the output power is verified by the experimental results with the rated resistor load.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.145-146
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• 2002

Metal-Oxide-Semiconductor Field Effect Transistor(MOSFET)의 게이트 유전체로서 실리콘 산화막($SiO_2$)은 두께가 1.5nm 이하로 낮아질 경우 터널링 전류가 증가하여 누설 전류가 증가하게 된다. 이로 인해 사용 전력이 증가하게 되고, 소자의 성능을 떨어뜨리게 된다. 본 논문은 높은 유전상수와 넓은 에너지 밴드 갭을 갖는 $HfO_2$를 RF Magnetron Sputter를 이용하여 증착한 다음 RTA 열처리를 통하여 HfSixOy를 생성하여 전기적 특성을 측정하였다. 실험결과, 열처리 시간이 증가함에 따라 HfSixOy의 분포가 균일해지는 반면 두께가 얇아져서 누설 전류가 증가 하는 것으로 관찰되었다. $HfO_2$를 게이트 유전막으로 증착하였을 경우 $HfO_2/HfSixOy/Si$의 이중 박막 구조가 생겨 유전상수를 떨어뜨리는 반면, 실리콘 기판과 우수한 계면 특성을 갖는 HfSixOy만을 증착할 경우 양질의 단층 게이트 유전막으로 활용가능 할 것으로 사료된다.

• Journal of Power Electronics
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• v.19 no.1
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• pp.220-233
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• 2019

This work aims to study and analyze the various operating modes of universal power converter which is powered by solar and thermoelectric generators. The proposed converter is operated in a DC-DC (buck or boost mode) and DC-AC (single phase) inverter with high efficiency. DC power sources, such as solar photovoltaic (SPV) panels, thermoelectric generators (TEGs), and Li-ion battery, are selected as input to the proposed converter according to the nominal output voltage available/generated by these sources. The mode of selection and output power regulation are achieved via control of the metal-oxide semiconductor field-effect transistor (MOSFET) switches in the converter through the modified stepped perturb and observe (MSPO) algorithm. The MSPO duty cycle control algorithm effectively converts the unregulated DC power from the SPV/TEG into regulated DC for storing energy in a Li-ion battery or directly driving a DC load. In this work, the proposed power sources and converter are mathematically modelled using the Scilab-Xcos Simulink tool. The hardware prototype is designed for 200 W rating with a dsPIC30F4011 digital controller. The various output parameters, such as voltage ripple, current ripple, switching losses, and converter efficiency, are analyzed, and the proposed converter with a control circuit operates the converter closely at 97% efficiency.

• Journal of IKEEE
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• v.20 no.3
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• pp.260-264
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• 2016

The MAX77846, which is compatible with MAX77826, is a sub-power management IC (PMIC) for the latest Wearable Watch and 3G/4G smart phones. The MAX77846 contains N-MOSFET (N channel Metal-Oxide Semiconductor Field-Effect Transistor), a high-efficiency regulator, and comparator, etc to power up peripherals. The MAX77846 also provides power on/off control logic for complete flexibility and an $I^2C$ (Inter Integrated Circuit) serial interface to program individual regulator output voltages. In this paper, the simplified power macro-model based on MAX77846 is designed to verify the performance of the battery voltage in terms of current and time, and simulated by using of the LTspice. In addition, it is verified how much time can the charged battery capacity for Samsung Galaxy Gear 2 be used to operate a specified function after measuring the currents flowing to carry out the main functions in real time, which will be applicable to design parameters for the advanced power module

• Journal of IKEEE
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• v.24 no.1
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• pp.208-215
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• 2020

In this study, the output 380V direct current DC-DC converter for low-voltage direct current(LVDC) distribution was designed in three types, and the voltage and current characteristics of the three types of DC-DC converter were compared and analyzed through simulation. When the converter was configured using a parallel structure with the power metal-oxide semiconductor field-effect transistor and two current suppression insulated-gate bipolar transistors(IGBTs), the time when the output voltage was stabilized at DC 380V was relatively short with 9ms and the range of output current changes was also between 44.8A and 50.2A, indicating that the width of change was much smaller and the effect of current suppression was greater compared to when IGBT was not applied(68~83A). These results suggest that the proposed DC-DC converter for LVDC distribution is likely to be applied to smart grid construction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.389-389
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• 2013

HfOx (Hafnium oxide)는 ~25의 고유전상수, 5.25 eV의 비교적 높은 Band-gap을 갖는 물질로 MOSFET (metal-oxide semiconductor field-effect-transistor) 구조의 Oxide 박막을 대체 가능한 물질로 연구가 지속되고 있다. 현재까지 진행된 대다수의 연구는 증착 조건에 따른 박막의 결정학적 및 전기적 특성에 대한 주제로 진행되었고 다양한 연구 결과가 보고된바 있다. 하지만 기존의 연구 기법은 박막의 nanomechanics 특성에 대한 연구가 부족하여 이를 보완하기 위한 연구가 절실하다. 따라서 본 연구에서는 HfOx 박막 내 포함된 산소가 고온 열처리 과정에서 빠져나감으로 인한 박막의 nanomechanics 특성을 확인하고자 하였다. 시료는 rf magnetron sputter를 이용하여Si (silicon) 기판위에 Hafnium target으로 산소유량(5, 10, 15 sccm)을 달리하여 증착하였고, 이후 furnace에서 $400^{\circ}C$에서 $1,000^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 시료의 전기적 특성을 I-V 곡선을 측정하여 확인하였고, 증착 시 산소 유량이 5 sccm에서 15 sccm으로 증가함에 따라서 누설전류 특성은 급격히 향상되었고, 열처리 온도가 증가함에 따라 감소하는 특성을 나타내었다. 또한 시료의 nanomechanics 특성을 확인하기 위하여 nano-indenter를 이용하여 시료의 표면강도(surface hardness)와 탄성계수(elastic modulus)를 확인하였다. 측정결과 5 sccm 시료의 표면강도와 탄성계수는 상온에서 열처리 온도가 증가함에 따라 각각 7.75 GPa에서 9.19 GPa로, 그리고 133.83 GPa에서 126.64 GPa로 10, 15 sccm의 박막의 비하여 상대적으로 균일한 특성을 나타내었다. 이는 증착 시 박막 내 과포화된 산소가 열처리 과정에서 빠져나감으로 인한 것이며, 또한 과포화된 정도에 따라 더 적은 열처리 에너지에 의하여 박막을 빠져나감으로 인한 것으로 판단된다. 또한 열처리 과정에서 산소가 빠져나가는 상대적인 flux의 영향으로 인하여 박막의 mechanical한 균일도의 변화가 나타났다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.1
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• pp.79-84
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• 2013

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.