• 한국주조공학회지
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• 제20권1호
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• pp.13-20
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• 2000

In the present study,($10%Al_2O_3+5%Si$)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, Molten Mg was infiltrated into the preform of $10%Al_2O_3+5%Si$ and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si Powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast(RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg Matrix for the squeeze cast hybrid composite. Mechanical Properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast($15%Al_2O_3$)/AZ91 Mg composite.

• 한국결정성장학회지
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• 제24권3호
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• pp.106-110
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• 2014

Atomic layer deposition(ALD)을 이용하여 $Al_2O_3$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. ALD로 증착된 $Al_2O_3$ 박막은 $400^{\circ}C$ 5분간 후속 열처리 공정 후에도 $Al_2O_3$ - 실리콘 계면 반응 없이 비정질 상태를 유지할 만큼 구조적으로 안정한 특성을 나타내었다. 후속 열처리 후 $Al_2O_3$ 박막의 패시베이션 특성이 향상되었으며, 이는 field effective 패시베이션과 화학적 패시베이션 효과가 동시에 상승에 기인하는 것으로 판단된다. $Al_2O_3$ 박막의 음고정 전하를 정량적으로 평가하기 위해서 후속 열처리 공정을 거친 $Al_2O_3$ 박막을 이용하여 metal-oxide-semiconductor(MOS) 소자를 제작하고 capacitance-voltage(C-V) 분석을 수행하였다. C-V 결과로부터 추출된 flatband voltage($V_{FB}$)와 equivalent oxide thickness(EOT)의 관계식을 통하여 $Al_2O_3$ 박막의 고정음전하는 $2.5{\times}10^{12}cm^{-2}$로 계산되었으며, 이는 본 연구에서 제시된 $Al_2O_3$ 박막 공정이 N-type 실리콘 태양전지의 패시베이션 공정에 응용 가능하다는 것을 의미한다.

• Composites Research
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• 제15권1호
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• pp.32-40
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• 2002

가압주조법을 이용하여 전자 패키징용 고부피분율 $SiC_p/Al$ 금속복합재료를 제조하였다. $SiC_p$ 예비성형체를 제조하기 위하여 예비성형체 금형을 고안하였으며, $Al_2O_{3f}$섬유 보강재를 $SiC_p$ 입자 보강재의 1/10비율로 첨가하고, 무기 성형제($SiO_2$)를 0.8% 이하로 사용하여 49~70 vol.% 의 예비성형체 제작에 성공하였다. 제조된 고부피분율 예비성형체로 금속용탕을 원활히 침투시키기 위해 온도, 가압력 등의 제조조건을 정하였으며, 이러한 새로이 고안된 금형조건을 FEM 열전도 해석에 도입하여 금속복합재료 제조시 몰드 내부에서 발생하는 온도변화를 분석하였다. 제조된 금속복합재료에 대해서는 충격특성 및 열팽창계수 특성평가를 실시하였다. 본 연구를 통해 제조된 금속복합재료의 충격흡수 에너지는 0.2~0.3J, 열팽창계수는 $8~10ppm/^{\circ}C$, 밀도는 $2.9~3.0g/cm^3$로 나타나 패기징 재료로서 적합한 특징을 가진 복합재료가 성공적으로 개발되었음을 확인하였다.

• 한국세라믹학회지
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• 제30권7호
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• pp.535-542
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• 1993

It was investigated in this study that a preparation method, activation energy, surface area, pore volume, pore size distribution and DTA analysis of the dry gel in process of producing monolithic porous gel in Li2O-Al2O3-TiO2-SiO2 system by the sol-gel technique using metal alkoxides. Activation energy for gellation according to the variation of water concentration and the kind of catalysts ranged from 10 to 20kcal/mole. Monolithic dry gels were prepared after drying at 9$0^{\circ}C$ when the amount of water for gellation was 4~8 times more than the stoichiometric amount, that was necessary for the full hydrolysis of the mixed metal alkoxide. The specific surface area, the pore volume, the average pore radius of the dried gel at 18$0^{\circ}C$ according to the various kinds of catalyst were about 348~734$m^2$/g, 0.35~0.70ml/g and 10~35$\AA$, respectively. It showed that the dry gels were porous body. As a result ofthe analysis of DTA, it was confirmed that the exothermaic peaks at 715$^{\circ}C$ and 77$0^{\circ}C$ was clue to the crystallization of dried gel.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• 한국세라믹학회지
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• 제32권4호
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• pp.507-515
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• 1995

The monolithic dry gels of the Li2O-Al2O3-TiO2-SiO2 system were prepared by the sol-gel technique using metal alkoxides as starting materials to obtain monolithic glass-ceramics at low temperature without melting. Activation energy for the crystal growth of the gel with 6.05% TiO2, nucleating ageng, for the preparation of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was 101.14kcal/mol. As a result of the analysis of DTA & XRD, it was confirmed that the crytallization of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was the most efficient when 6.05% TiO2, nucleating agent, was added. $\beta$-eucryptite solid solution crystals and $\beta$-spodumene solid solution crystals were detected in the sample heat treated above 85$0^{\circ}C$. The sintered gel heat treated at 85$0^{\circ}C$ had the specific surface area of 185$m^2$/g, the pore volume of 0.19cc/g and the average pore radius of 20.8$\AA$. This shows that the sintered gel is also comparatively porous material. In temperature range of 25~85$0^{\circ}C$ thermal expansion coefficient of the specimen which was crystallized for 10hrs at 85$0^{\circ}C$ was 6.7$\times$10-7/$^{\circ}C$, which indicated that the crystallized specimen was turned out to be the glass-ceramic with low thermal expansion.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• 한국진공학회지
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• 제9권3호
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• pp.263-266
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• 2000

본 논문에서는 낮은 구동 전압에서 동작하고 안정된 on/off 상태를 갖는 Al/$TiO_2-SiO_2$/Mo 형태의 안티퓨즈를 제작하였다. 하부전극으로 사용된 Mo 금속은 표면상태가 부드럽고 녹는점이 높은 매우 안정된 금속으로, 표면 위에 제조된 $SiO_2$ 특성을 매우 안정되게 유지시켰다. 또한 $TiO_2$절연막을 $SiO_2$절연막 위에 복층 구조로 증착하여, Ti 금속의 침투로 인한 $SiO_2$ 절연막의 약화로 동일 두께(100 $\AA$)의 $SiO_2$, 단일막에 비하여 향상된 절연파괴 전압을 얻을 수 있었다. $TiO_2-SiO_2$ 이중절연막을 사용하여 적정 절연파괴전압 및 ON-저항을 구현하였으며, 두께가 두꺼워짐으로 인해 바닥금속의 거칠기의 영향을 최소화시킬 수 있었다. 이중 절연막의 두께는 250 $\AA$이고 프로그래밍 전압은 9.0 V이고 약 65 $\Omega$의 on 저항을 얻을 수 있었다.

• 한국세라믹학회지
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• 제31권9호
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• pp.1069-1075
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• 1994

When ceramics are used as the parts of an engine and a machine, the tribological properties are very important. For the preparation of the resistance material for wear applications by the method of Reaction-Bonded Sintering, metal silicon and carbon black are mixed up into SiC powder, and Al2O3 and Fe2O3 are put as an additive. As the general properties, the bending strength and water absortion are measured in the normal temperature and the phase changies are investigated with XRD. The property of the resistance for wear applications is measured with the amount of friction and wear, friction coefficient and maximum asperties. And, the surface of wear is observed with SEM. With the results of this study, the optimal mol ratio of Si : C and the suitable quantity of the mixture of SiC are 7 : 3 and 40 wt%, respectively. In the case of the addition of Al2O3 (2 wt%), the resistance for friction and wear applications is prominent. The bending strength showed the highest peak when Al2O3 (4 wt%) and Fe2O3 (4 wt%) were added. The properties of friction and wear were related with the propagation velocity of crack rather than the bending strength.

• 한국세라믹학회지
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• 제23권5호
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• pp.25-34
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• 1986

This study was to refined the crystal structure of solid solution to determine the position and amount of Al in diopside and to relate crystal structure changes and properties of solid solution. Single crystals of the solid solution in the system CaO.MgO.$2 SiO_2-Al_2O_3$ were made from the melt with slow cooling and used to refine the structure. The following were obtained. 1. Tetrahedra rotated around axis parallel to the direction which the angle 03-03-03 became small. 2. Tetrahedron became large and regular. Average T-O bond distance increased 0.53 percent. 3. M1 octahedron became small and average M1-O bond distance decreased 1.1 percent. 4, M2 polyhedron became small and average M2-O bond distance decreased 0.37 percent Polythedron was affected not so much compared with any cation site. 5. Distance between metal ions distances between T and oxygens which were coordinated with M2 and meighboring tetrahedron distances between M2 and oxygens which coordinated with M1 and M2 were not changed almost. 6. $Al^{3+}$ substituted 4Mg^{2+}$ and $Si^{4+}$