• Title/Summary/Keyword: Metal transport

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An Experimental and Numerical Analysis of Flow of Electromagnetic Pump for Molted Metal Transport (용융금속 이송용 전자기 펌프의 유동해석 및 실험)

  • Choi, Jae-Ho;Lim, Hyo-Jae;Kim, Chang-Eob;Kwon, Jung-Tae
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2621-2625
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    • 2007
  • This study aims at analyzing the flow characteristics of the electromagnetic pump using a linear induction motor (LIM) for transferring molten metals. The flow characteristics of the pump are simulated by magnetohydrodynamic(MHD) program. In this system, the LIM is used for transferring molten metal by electromagnetic force. The molten metal is treated as the secondary part of the LIM. Since the LIM produces an electromagnetic force in the duct, the molten metal can flow from the furnace to the reservoir. The flow characteristics of the pump are analyzed using MHD program for magnetic field of 0.1[T] in duct. In order to prove the analysis, we made a prototype electromagnetic pump using LIM.

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Prediction of Metal Ion Binding Sites in Proteins from Amino Acid Sequences by Using Simplified Amino Acid Alphabets and Random Forest Model

  • Kumar, Suresh
    • Genomics & Informatics
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    • v.15 no.4
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    • pp.162-169
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    • 2017
  • Metal binding proteins or metallo-proteins are important for the stability of the protein and also serve as co-factors in various functions like controlling metabolism, regulating signal transport, and metal homeostasis. In structural genomics, prediction of metal binding proteins help in the selection of suitable growth medium for overexpression's studies and also help in obtaining the functional protein. Computational prediction using machine learning approach has been widely used in various fields of bioinformatics based on the fact all the information contains in amino acid sequence. In this study, random forest machine learning prediction systems were deployed with simplified amino acid for prediction of individual major metal ion binding sites like copper, calcium, cobalt, iron, magnesium, manganese, nickel, and zinc.

The Corrosion Control Using CCPP(Calcium Carbonate Precipitation Potential )Index in Metallic Coupons ($CaCO_3$침전능 조절에 의한 금속시편에서의 부식방지)

  • 이재인;임진경;서상훈;김동윤;신춘환
    • Journal of Environmental Science International
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    • v.9 no.6
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    • pp.505-509
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    • 2000
  • The purpose of this study was to evaluate the effects of $Ca(OH)_2$ and $CO_2$ additions on the corrosion of metal coupons(ductile iron, galvanized steel, copper and stainless steel). Corrosion rate and released metal ion concentration of ductile iron and galvanized steel decreased by adjusting alkalinity, calcium hardness and pH with $Ca(OH)_2$ & $CO_2$ additions on copper and stainless steel were less than those on ductile iron and galvanized steel. When ductile iron coupon was exposed to water treated with Ca(OH)$_2$&$CO_2$, additions, the main components of corrosion product formed on its surface were $CaCO_3$ and $Fe_2 O_3 or Fe_2 O_4$ which often reduce the corrosion rate by prohibiting oxygen transport to the metal surface.

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Metallothionein gene(pPMT)와 Manganese Transport Gene mntA(pZH3-5)를 포함한 재조합 Escherichia coli를 이용하여 수용액상에서의 Cadmium의 선택적 제거

  • Kim, Se-Gwon;Baek, Seung-Hak;Kim, Eun-Gi
    • 한국생물공학회:학술대회논문집
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    • 2000.04a
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    • pp.426-429
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    • 2000
  • Recombinant E. coli JM109(pZH3-5/pMT) harboring manganese transport gene(mntA) and metal sequestering protein, metallothionein(MT), was cultivated to accumulate cadmium in aqueous phase. Bioaccumulation followed Michaelis-Menten type kinetics. Equilibrium isotherm showed Langmuir type isotherm. The optimum pH for $Cd^{2+}$ uptake was 7-7.5.

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A Study on the Development of Electrophotographic Photoreceptor by Metal free-Phthalocyanine Dye Sensitized System (무금속프탈로시아닌 색소계를 이용한 전자사진 감광체의 개발에 관한 연구)

  • Jeong, Eun-Sil;Kim, Yeong-Sun;Jeong, Pyeong-Jin
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.7-14
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    • 2000
  • The object of this study was to improve electrophotographic photoreceptor using metal free-phthalocyanine dye sensitized system. In here a various types of metal free-phthalocyanine and polymers and hydrazone were used as charge generation material(CGM) and binder, respectively, and also the hydrazone derivative or zinc complex was used as charge transport material(CTM). It was found that $x-H_2Pc$ showed the highest sensitivity among the ${\alpha}-$, ${\beta}-$ and x- metal free-phthalocyanine($x-H_2Pc$) as CGM. The photoreceptor made by $x-H_2Pc$ and hydrazone derivative as CGM and CTM, respectively, showed the highest ratio of dark decay having 73.1% and the good sensitivity of $1.50lux{\cdot}sec$ compared to other photoreceptors.

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Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

  • De-Peng Wang;Rui-Feng Niu;Li-Qi Cui;Wei-Tian Wang
    • Korean Journal of Materials Research
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    • v.33 no.6
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    • pp.229-235
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    • 2023
  • An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

Synthesis and Applications of Noble Metal and Metal Silicide and Germanide 1-Dimensional Nanostructures

  • Yoon, Ha-Na;Yoo, Young-Dong;Seo, Kwan-Yong;In, June-Ho;Kim, Bong-Soo
    • Bulletin of the Korean Chemical Society
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    • v.33 no.9
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    • pp.2830-2844
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    • 2012
  • This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

Role of edge patterning and metal contact for extremely low contact resistance on graphene

  • Jo, Seo-Hyeon;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.294.2-294.2
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    • 2016
  • Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

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A study on the electrical switching properties of oxide metal (산화금속의 전기적 스위칭 특성 연구)

  • Choi, Sung-Jai;Lee, Won-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.3
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    • pp.173-178
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    • 2009
  • We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

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