• 제목/요약/키워드: Metal substrate

검색결과 1,512건 처리시간 0.037초

실험계획법에 의한 알루미나 세라믹의 플라즈마 용사코팅 최적화 (Optimization of Plasma Spray Coating Parameters of Alumina Ceramic by Taguchi Experimental Method)

  • 이형근;김대훈;윤충섭
    • Journal of Welding and Joining
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    • 제18권6호
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    • pp.96-101
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    • 2000
  • Sintered alumina ceramic substrate has been used for the insulating substrate for thick Hybrid IC owing to its cheapness and good insulating properties. Some of thick HIC's are important to eliminate the heat emitted from the parts that are mounted on the ceramic substrate. Sintered ceramic substrate can not transfer and emit the heat efficiently. It's been tried to do plasma spray coating of alumina ceramic on the metal substrates that have a good heat emission property. The most important properties to commercialize this ceramic coated metal substrate are surface roughness and deposition efficiency. In this study, plasma spray coating parameters are optimized to minimize the surface roughness and to maximize the deposition efficiency using Taguchi experimental method. By this optimization, the deposition efficiency was greatly improved from 35% at the frist time to 75% finally.

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핫 엠보싱 공정과 CMP 공정을 이용한 플라스틱 기판에 메탈 라인 형성 (Fabrication of metal line on plastic substrate by hot embossing and CMP process)

  • 차남구;강영재;박창화;임현우;박진구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.655-656
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    • 2005
  • In the future, plastic based system will play a crucial role in modem life, for examples, transparent display or disposable electronics and so on. In this paper, we introduced a new method to fabricate the metal line on the plastic substrate. Metal lines were fabricated by hot embossing and CMP process on PMMA (polymethylmethacrylate) substrates. A Si mold was made by wet etching process and a PMMA wafer was cut off from I mm thick PMMA sheet. A 100 nm thick Al was deposited on PMMA wafers. The Al deposited PMMA wafer and the Si mold carefully sandwiched which was directly imprinted by hot embossing. After imprinting process, a residual Al layer was removed by CMP process. Finally, we found the entire process may be very useful to fabricate the metal line on plastic substrates.

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LTCC 보호층 형성에 따른 박막 전극패턴에 관한 연구 (Effect of Protective layer on LTCC Substrate for Thin Metal Film Patterns)

  • 김용석;유원희;장병규;박정환;유제광;오용수
    • 한국재료학회지
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    • 제19권7호
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    • pp.349-355
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    • 2009
  • Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

알루미늄 판상에 글라스 세라믹 후막이 코팅된 절연금속기판의 제조 및 절연특성 (Fabrication and Electrical Insulation Property of Thick Film Glass Ceramic Layers on Aluminum Plate for Insulated Metal Substrate)

  • 이성환;김효태
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.39-46
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    • 2017
  • 본 연구는 평판형 히터용 금속방열판상의 세라믹 절연층 제조, 즉 절연성 금속기판에 관한 것이다. 반도체나 디스플레이의 열처리 공정 등에 사용되는 평판형 히터를 제조함에 있어서, 온도 균일도를 높이기 위해 금속 방열판으로서 열전도율이 높고, 비교적 가벼우며, 가공성 좋은 알루미늄 합금 기판이 선호된다. 이 알루미늄 기판에 발열 회로 패턴을 형성하기 위해서는 금속 기판에 절연층으로서 고온 안정성이 우수한 세라믹 유전체막을 코팅하여야 한다. 금속 기판상에 세라믹 절연층을 형성함에 있어서 가장 빈번히 발생하는 첫 번째 문제는 금속과 세라믹의 이종재료 간의 큰 열팽창계수 차이와 약한 결합력에 의한 층간박리 및 균열발생이다. 두 번째 문제는 절연층의 소재 및 구조적 결함에 따른 절연파괴이다. 본 연구에서는 이러한 문제점 해소를 위해 금속소재 기판과 세라믹 절연층 사이에 완충층을 도입하여 이들 간의 기계적 매칭과 접합력 개선을 도모하였고, 다중코팅 방법을 적용하여 절연막의 품질과 내전압 특성을 개선하고자 하였다.

Fabrication and Characterization of Free-Standing Silicon Nanowires Based on Ultrasono-Method

  • Lee, Sung-Gi;Sihn, Donghee;Um, Sungyong;Cho, Bomin;Kim, Sungryong;Sohn, Honglae
    • 통합자연과학논문집
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    • 제6권3호
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    • pp.170-175
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    • 2013
  • Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

수직보조전계 인가방식에 의한 전기영동 전착막의 제작 (Fabrication of EPD Films by Applying a.c Field Assisted Method)

  • 전용우;박성범;소대화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.107-110
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    • 2002
  • The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

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Self-healing Coatings for an Anti-corrosion Barrier in Damaged Parts

  • Cho, Soo Hyoun
    • Corrosion Science and Technology
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    • 제8권6호
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    • pp.223-226
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    • 2009
  • Polymer coatings are commonly applied to metal substrates to prevent corrosion in aggressive environments such as high humidity and under salt water. Once the polymer coating has been breached, for example due to cracking or scratches, it loses its effectiveness, and corrosion can rapidly propagate across the substrate. The self-healing system we will describe prevents corrosion by healing the damage through a healing reaction triggered by the actual damage event. This self-healing coating solution can be easily applied to most substrate materials, and our dual-capsule healing system provides a general approach to be compatible with most common polymer matrices. Specifically, we expect an excellent anti-corrosion property of the self-healing coatings in damaged parts coated on galvanized metal substrates.

프릿트 첨가에 따른 저온소성 기판과 Cu와의 접합 거동에 관한 연구 (The Effect of Frit on Bonding Behavior of Low-firing-substate and Cu Conductor)

  • 박정현;이상진
    • 한국세라믹학회지
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    • 제32권5호
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    • pp.601-607
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    • 1995
  • The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

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Staphylococcus aureus 유래 비금속성 이성화효소인 Tagatose-6-phosphate Isomerase의 기질다양성 (Substrate Variety of a Non-metal Dependent Tagatose-6-phosphate Isomerase from Staphylococcus aureus)

  • 오덕근;지은수;권영덕;김혜정;김필
    • 한국미생물·생명공학회지
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    • 제33권2호
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    • pp.106-111
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    • 2005
  • 비금속성 이성화효소로 추정되는 Staphylococcus aureus의 tagatose-6-phosphate isomerase(E.C. 5.3.1.26)의 기질다 양성을 조사하기 위해서 그 구조유전자(lacB;510bp와 lacA;430bp)를 대장균에서 동시발현하였다. 알려진 기질 이외에 D-ribose와 D-allose에 대해 이성화활성이 새롭게 관찰되었다. EDTA 1 mM 존재하에서도 D-ribose와 D-allose에 대하여 각각 EDTA 비존재 조건에 대비하여 $95\%,\;75\%$의 이성화활성을 나타내는 것으로 미루어 tagatose-6-phosphate isomerase가 비금속성 이성화효소임을 밝혔다. 이때 lacA 또는 lacB의 단독발현시에는 이성화활성이 전혀 밝견되지 않았다. D-Ribose와 D-allose에 대한 기질친화상수 ($K_m$)은 각각 26 mM와 142 mM였다.

Metal-Organic Decomposition법에 의한 강유전성 $YMnO_3$ 박막의 제조 및 특성 (Preparation of Ferroelectric $YMnO_3$ Thin Films by Metal-Organic Decomposition Process and their Characterization)

  • 김제헌;강승구;김응수;김유택;심광보
    • 한국세라믹학회지
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    • 제37권7호
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    • pp.665-672
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    • 2000
  • The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

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