• Title/Summary/Keyword: Metal substrate

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Optimization of Plasma Spray Coating Parameters of Alumina Ceramic by Taguchi Experimental Method (실험계획법에 의한 알루미나 세라믹의 플라즈마 용사코팅 최적화)

  • 이형근;김대훈;윤충섭
    • Journal of Welding and Joining
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    • v.18 no.6
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    • pp.96-101
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    • 2000
  • Sintered alumina ceramic substrate has been used for the insulating substrate for thick Hybrid IC owing to its cheapness and good insulating properties. Some of thick HIC's are important to eliminate the heat emitted from the parts that are mounted on the ceramic substrate. Sintered ceramic substrate can not transfer and emit the heat efficiently. It's been tried to do plasma spray coating of alumina ceramic on the metal substrates that have a good heat emission property. The most important properties to commercialize this ceramic coated metal substrate are surface roughness and deposition efficiency. In this study, plasma spray coating parameters are optimized to minimize the surface roughness and to maximize the deposition efficiency using Taguchi experimental method. By this optimization, the deposition efficiency was greatly improved from 35% at the frist time to 75% finally.

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Fabrication of metal line on plastic substrate by hot embossing and CMP process (핫 엠보싱 공정과 CMP 공정을 이용한 플라스틱 기판에 메탈 라인 형성)

  • Cha, Nam-Goo;Kang, Young-Jae;Park, Chang-Hwa;Rim, Hyung-Woo;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.655-656
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    • 2005
  • In the future, plastic based system will play a crucial role in modem life, for examples, transparent display or disposable electronics and so on. In this paper, we introduced a new method to fabricate the metal line on the plastic substrate. Metal lines were fabricated by hot embossing and CMP process on PMMA (polymethylmethacrylate) substrates. A Si mold was made by wet etching process and a PMMA wafer was cut off from I mm thick PMMA sheet. A 100 nm thick Al was deposited on PMMA wafers. The Al deposited PMMA wafer and the Si mold carefully sandwiched which was directly imprinted by hot embossing. After imprinting process, a residual Al layer was removed by CMP process. Finally, we found the entire process may be very useful to fabricate the metal line on plastic substrates.

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Effect of Protective layer on LTCC Substrate for Thin Metal Film Patterns (LTCC 보호층 형성에 따른 박막 전극패턴에 관한 연구)

  • Kim, Yong-Suk;Yoo, Won-Hee;Chang, Byeung-Gyu;Park, Jung-Hwan;Yoo, Je-Gwang;Oh, Yong-Soo
    • Korean Journal of Materials Research
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    • v.19 no.7
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    • pp.349-355
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    • 2009
  • Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

Fabrication and Electrical Insulation Property of Thick Film Glass Ceramic Layers on Aluminum Plate for Insulated Metal Substrate (알루미늄 판상에 글라스 세라믹 후막이 코팅된 절연금속기판의 제조 및 절연특성)

  • Lee, Seong Hwan;Kim, Hyo Tae
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.39-46
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    • 2017
  • This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

Fabrication and Characterization of Free-Standing Silicon Nanowires Based on Ultrasono-Method

  • Lee, Sung-Gi;Sihn, Donghee;Um, Sungyong;Cho, Bomin;Kim, Sungryong;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.6 no.3
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    • pp.170-175
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    • 2013
  • Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

Fabrication of EPD Films by Applying a.c Field Assisted Method (수직보조전계 인가방식에 의한 전기영동 전착막의 제작)

  • Jeon, Yong-Woo;Park, Seong-Beom;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.107-110
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    • 2002
  • The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

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Self-healing Coatings for an Anti-corrosion Barrier in Damaged Parts

  • Cho, Soo Hyoun
    • Corrosion Science and Technology
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    • v.8 no.6
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    • pp.223-226
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    • 2009
  • Polymer coatings are commonly applied to metal substrates to prevent corrosion in aggressive environments such as high humidity and under salt water. Once the polymer coating has been breached, for example due to cracking or scratches, it loses its effectiveness, and corrosion can rapidly propagate across the substrate. The self-healing system we will describe prevents corrosion by healing the damage through a healing reaction triggered by the actual damage event. This self-healing coating solution can be easily applied to most substrate materials, and our dual-capsule healing system provides a general approach to be compatible with most common polymer matrices. Specifically, we expect an excellent anti-corrosion property of the self-healing coatings in damaged parts coated on galvanized metal substrates.

The Effect of Frit on Bonding Behavior of Low-firing-substate and Cu Conductor (프릿트 첨가에 따른 저온소성 기판과 Cu와의 접합 거동에 관한 연구)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.601-607
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    • 1995
  • The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

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Substrate Variety of a Non-metal Dependent Tagatose-6-phosphate Isomerase from Staphylococcus aureus (Staphylococcus aureus 유래 비금속성 이성화효소인 Tagatose-6-phosphate Isomerase의 기질다양성)

  • Oh Deok-Kun;Ji Eun-Soo;Kwon Young-Deok;Kim Hye-Jung;Kim Pil
    • Microbiology and Biotechnology Letters
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    • v.33 no.2
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    • pp.106-111
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    • 2005
  • To investigate the substrate variety of a putative non-metal dependent isomerase, the tagatose-6-phosphate isomerase (E.C. 5.3.1.26) structural genes (lacB; 510bp and lacA; 430bp) of Staphylococcus aureus were subcloned and co-expressed. Based on the substrate configuration, various aldoses were surveyed for substrate of ketose isomerization. Among the 10 aldoses tested, D-ribose and D-allose were isomerized by the enzyme. The subunit A and B showed more than $95\%$ activity for D-ribose and $75\%$ for D-allose in the presence of 1mM EDTA compared with non-EDTA conditions, which implying tagatose-6-phosphate isomerase is a non-metal dependent isomerase. Each of subunit A or subunit B alone showed no activity for any of the substrates tested. The affinity constant ($K_m$) of tagatose-6-phosphate isomerase against D-ribose and D-allose were 26 mM and 142 mM, respectively.

Preparation of Ferroelectric $YMnO_3$ Thin Films by Metal-Organic Decomposition Process and their Characterization (Metal-Organic Decomposition법에 의한 강유전성 $YMnO_3$ 박막의 제조 및 특성)

  • 김제헌;강승구;김응수;김유택;심광보
    • Journal of the Korean Ceramic Society
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    • v.37 no.7
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    • pp.665-672
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    • 2000
  • The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

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