• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.196-201
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• 2011

Near-field properties of light emanated from a subwavelength double slit of finite length in a thin metal film, which is essential for understanding fundamental physical mechanisms for near-field optical beam manipulations and various potential nanophotonic device applications, is investigated by using a three-dimensional finite-difference time-domain method. Near-field intensity distribution along the propagation direction of light after passing through the slit has been obtained from the phase relation of transverse electric and magnetic fields and the wave impedance. It is found that the near field of emerged light from the both slits is evanescent, that is consistent with conventional surface plasmon localization near the metal surface. Due to the finite of the slit, the amplitude of this evanescent field does not monotonically approach to than of the infinite slit as the slit length increases, i.e. the near-field of the longer slit along the center line can be weaker than that of the shorter one.

• Structural Engineering and Mechanics
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• v.64 no.2
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• pp.195-204
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• 2017

Analytical and experimental studies of the innovative pipe in pipe damper have been recently investigated by the authors. In this paper, by adding lead or zinc infill or slit diaphragm inside the inner pipe, it is tried to increase the equivalent viscous damping ratio improving the cyclic performance of the recently proposed multi-level control system. The damper consists of three main parts including the outer pipe, inner pipe and added complementary damping part. At first plastic deformations of the external pipe, then the internal pipe and particularly the added core and friction between them make the excellent multi-level damper act as an improved energy dissipation system. Several kinds of added lead or zinc infill and also different shapes of slit diaphragms are modeled inside the inner pipe and their effectiveness on hysteresis curves are investigated with nonlinear static analyses using finite element method by ABAQUS software. Results show that adding lead infill has no major effect on the damper stiffness while zinc infill and slit diaphragm increase damper stiffness sharply up to more than 10 times depending on the plate thickness and pipe diameter. Besides, metal infill increases the viscous damping ratio of dual damper ranging 6-9%. In addition, obtained hysteresis curves show that the multi-level control system as expected can reliably dissipate energy in different imposed energy levels.

• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.53-57
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• 2013

A polarization selective blazed grating employing metal-slit arrays was proposed. Nano-scale metal-slits were applied to the micro-scale blazed grating to give the functionality of polarization selection. Case study was carried out for the proposed structure utilizing numerical FDTD (Finite Difference Time Domain method) simulation. Diffraction efficiency of 77.61% and polarization extinction ratio of 8.99 was achieved with arbitrary parameters and diffraction efficiency of 64.22% and polarization extinction ratio of 81.09 was achieved with other parameters to enhance extinction ratio.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.180-187
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• 2016

The independent operation of a color filter for incident polarization is demonstrated using a guided-mode resonance (GMR) filter employing a metal-insulator-metal (MIM) waveguide. To achieve independent operation, a rectangular MIM grating is proposed as a wave-guide resonator. The design considerations are discussed and include how to determine the grating period and slit width. Power flow distribution is observed with slit width variation. Blue-green, green-red, and blue-red filters for corresponding x- and y-polarizations are demonstrated as application examples with numerical simulation with rectangle-shaped MIM grating. As a practical application, feasibility as a chromatic polarizer is discussed.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.1-5
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• 2009

Recently, much research has been done for to realizeing nano-scale photonic circuits based on photonic crystal, plasmonics and silicon photonics in order to overcome fundamental limits of electronic circuits. These limits include such as bottleneck of speed, and size that cannot be reduced. Even though several kinds of coupling schemes have been reported, coupling structures are still large when it is compared with the nano-scale optical circuit. In this paper, we proposed using a very thin Fresnel lens while shortening the focal length of the Fresnel lens as much as possible. We proposed, for the first time, to utilize metal slits that are able to use the optical coupling system between a nano-scale optical circuit and the standard single mode optical fiber for overcoming the limitation of focal length shortening of the Fresnel lens. Comparative study has been carried out with a FDTD simulation between normal and metal slit assisted Fresnel lens. From the result of simulation, we can achieve 65% coupling efficiency for the metal-slit Fresnel lens when the focal length of metal-slit Fresnel lens is just $4{\mu}m$. On the other hand, the coupling efficiency of the normal Fresnel lens is about 43%.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.255-256
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• 2007

We propose a novel method for the beam focusing by a single subwavelength metal slit surrounded by chirped dielectric surface gratings. In the proposed method, the period of each grating is chirped to make a focused beam at the desired position. Design of the grating structures for optimal beam focusing and the analysis of the field distribution are conducted based on the rigorous coupled wave analysis (RCWA). It is shown that the focused beam is formed at 1.5${\mu}m$ from the metal substrate and its full width at half maximum (FWHM) is 411nm.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.563-566
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• 2016

We report a theoretical research for the condition of electromagnetic shield breaching when a narrow aperture is punctured in thin metal film. To calculate electromagnetic field transmission through a narrow slit, a Rayleigh wave expansion has been applied for free standing, thin metal film. We found that the DC electric field allows perfect transmission when the length of the slit is infinite, regardless of the other geometrical factors such as slitwidth and thickness. Slitwidth dependent transmission spectra as a function of frequency shows a cutoff frequency that decreases almost linearly to the slitwidth, giving that almost successful shielding is only possible when the slitwidth is smaller than 1 micron.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.12-17
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• 2001

It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal. It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal.

• Journal of electromagnetic engineering and science
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• v.13 no.3
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• pp.165-172
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• 2013

This paper describes a design for a spiral antenna with a conical wall to obtain the high gain. The gain and the axial ratio of the spiral antenna were improved by a new design that included a conical wall and an optimized Archimedean slit on the ground plane in a conventional antenna with a circular cavity wall and a 4.5-turn slit. A gain improvement of 9.5 dBi higher and a good axial ratio of 1.9 dB lower were measured by the added conical wall and the newly designed slit from the current distribution control on the ground plane, respectively. The measured return loss, gain and axial ratio of the proposed antenna showed a good agreement with the simulated results. The proposed antenna will be applied to a non-linear junction detector system.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.