• 제목/요약/키워드: Metal slit

검색결과 38건 처리시간 0.036초

Near-field Characterization on Light Emanated from Subwavelength Plasmonic Double Slit of Finite Length

  • Kim, Ki-Young;Goncharenko, Anatoliy V.;Hong, Jian-Shiung;Chen, Kuan-Ren
    • Journal of the Optical Society of Korea
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    • 제15권2호
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    • pp.196-201
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    • 2011
  • Near-field properties of light emanated from a subwavelength double slit of finite length in a thin metal film, which is essential for understanding fundamental physical mechanisms for near-field optical beam manipulations and various potential nanophotonic device applications, is investigated by using a three-dimensional finite-difference time-domain method. Near-field intensity distribution along the propagation direction of light after passing through the slit has been obtained from the phase relation of transverse electric and magnetic fields and the wave impedance. It is found that the near field of emerged light from the both slits is evanescent, that is consistent with conventional surface plasmon localization near the metal surface. Due to the finite of the slit, the amplitude of this evanescent field does not monotonically approach to than of the infinite slit as the slit length increases, i.e. the near-field of the longer slit along the center line can be weaker than that of the shorter one.

Improving cyclic behavior of multi-level pipe damper using infill or slit diaphragm inside inner pipe

  • Zahrai, Seyed Mehdi;Cheraghi, Abdullah
    • Structural Engineering and Mechanics
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    • 제64권2호
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    • pp.195-204
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    • 2017
  • Analytical and experimental studies of the innovative pipe in pipe damper have been recently investigated by the authors. In this paper, by adding lead or zinc infill or slit diaphragm inside the inner pipe, it is tried to increase the equivalent viscous damping ratio improving the cyclic performance of the recently proposed multi-level control system. The damper consists of three main parts including the outer pipe, inner pipe and added complementary damping part. At first plastic deformations of the external pipe, then the internal pipe and particularly the added core and friction between them make the excellent multi-level damper act as an improved energy dissipation system. Several kinds of added lead or zinc infill and also different shapes of slit diaphragms are modeled inside the inner pipe and their effectiveness on hysteresis curves are investigated with nonlinear static analyses using finite element method by ABAQUS software. Results show that adding lead infill has no major effect on the damper stiffness while zinc infill and slit diaphragm increase damper stiffness sharply up to more than 10 times depending on the plate thickness and pipe diameter. Besides, metal infill increases the viscous damping ratio of dual damper ranging 6-9%. In addition, obtained hysteresis curves show that the multi-level control system as expected can reliably dissipate energy in different imposed energy levels.

금속 슬릿 배열로 구성된 편광 선택 가능한 블레이즈드 회절 격자 (Polarization Selective Blazed Grating Employing Metal-slit Arrays)

  • 정영진
    • 한국광학회지
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    • 제24권2호
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    • pp.53-57
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    • 2013
  • 본 논문에서는 금속 슬릿 배열로 구성된 편광 선택 가능한 블레이즈드 회절 격자를 제안한다. 마이크로 스케일의 블레이즈드 회절 격자를 디자인 하고 이 구조에 추가적으로 나노스케일의 금속 슬릿 구조를 적용하여 편광 선택기능을 부여하였다. 이 소자에 대하여 사례 연구로 예를 디자인하여 FDTD(Finite Difference Time Domain method)방법을 이용한 전산모사를 통해 성능을 검증해 보았다. 임의의 디자인 사례에 대해 대략 77.61% 의 회절효율과 8.99의 편광선택비가 얻어졌으며 편광선택비를 높이기 위한 또 다른 디자인에서는 64.22%의 회절효율과 81.09의 편광선택비가 얻어졌다.

Independent Color Filtering of Differently Polarized Light Using Metal-Insulator-Metal Type Guided Mode Resonance Structure

  • Jung, Young Jin;Park, Namkyoo
    • Journal of the Optical Society of Korea
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    • 제20권1호
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    • pp.180-187
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    • 2016
  • The independent operation of a color filter for incident polarization is demonstrated using a guided-mode resonance (GMR) filter employing a metal-insulator-metal (MIM) waveguide. To achieve independent operation, a rectangular MIM grating is proposed as a wave-guide resonator. The design considerations are discussed and include how to determine the grating period and slit width. Power flow distribution is observed with slit width variation. Blue-green, green-red, and blue-red filters for corresponding x- and y-polarizations are demonstrated as application examples with numerical simulation with rectangle-shaped MIM grating. As a practical application, feasibility as a chromatic polarizer is discussed.

광 결합 및 집속도 향상을 위한 금속 슬릿 프레넬 렌즈의 설계 (Design of Metal-Slit Fresnel Lens for Enhanced Coupling Efficiency)

  • 박동원;정영진;구석모;유선규;박남규;전영민;이석
    • 한국광학회지
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    • 제20권1호
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    • pp.1-5
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    • 2009
  • 최근 광 격자구조나(photonic crystal) 표면 플라즈몬파(surface plasmon) 혹은 실리콘을 이용한 나노(nano) 스케일의 광 회로 시스템에 대한 연구가 활발한데, 이는 이미 한계에 다다른 전자회로속도의 한계를 극복하고 지금보다도 훨씬 작은 회로를 구성할 수 있는 이점이 있기 때문이다. 현재까지 보고된 바 있는 광 결합 시스템들은 그 크기가 나노 스케일의 광 회로 시스템에 비해 커서 광 결합 시스템으로서의 의미가 퇴색되고 있는데 본 논문에서는 매우 짧은 초점 거리를 가지며 매우 얇은 구조를 가지는 프레넬 렌즈를 이용한 광 결합 시스템을 제안하여 광 결합 시스템을 나노 스케일 광 회로 시스템과 비교할 수 있을 정도로 소형화 하는 방법을 모색하였다. 본 논문에서는 금 슬릿을 채용한 프레넬 렌즈를 제안하여 설계하고 그 구조를 이용해 2차원 전산모사를 수행하였다. 그 결과, 일반 프레넬 렌즈의 광 결합 효율이 약 43%인데 반해, 금 슬릿을 채용한 프레넬 렌즈의 광 결합 효율은 가장 효율적인 구조로 설계하였을 경우에 최대 약 65%의 광 결합 효율을 보인다. 일반 프레넬 렌즈에 비해 50% 이상의 광 결합 효율의 향상을 달성하였다.

금속 슬릿 주변에 유전체 chirped grating을 배열함으로써 구현한 beam focusing (Beam focusing by a single subwavelength metal slit surrounded by chirped dielectric surface gratings)

  • 김세윤;박정현;임용준;김휘;이병호
    • 한국광학회:학술대회논문집
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    • 한국광학회 2007년도 하계학술발표회 논문집
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    • pp.255-256
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    • 2007
  • We propose a novel method for the beam focusing by a single subwavelength metal slit surrounded by chirped dielectric surface gratings. In the proposed method, the period of each grating is chirped to make a focused beam at the desired position. Design of the grating structures for optimal beam focusing and the analysis of the field distribution are conducted based on the rigorous coupled wave analysis (RCWA). It is shown that the focused beam is formed at 1.5${\mu}m$ from the metal substrate and its full width at half maximum (FWHM) is 411nm.

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A Breaching of Electromagnetic Shielding by Narrow Aperture in Metal Film

  • Park, Doo Jae;Chu, Hong;Kyoung, Jisoo;Choi, Soo Bong
    • Journal of the Optical Society of Korea
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    • 제20권5호
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    • pp.563-566
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    • 2016
  • We report a theoretical research for the condition of electromagnetic shield breaching when a narrow aperture is punctured in thin metal film. To calculate electromagnetic field transmission through a narrow slit, a Rayleigh wave expansion has been applied for free standing, thin metal film. We found that the DC electric field allows perfect transmission when the length of the slit is infinite, regardless of the other geometrical factors such as slitwidth and thickness. Slitwidth dependent transmission spectra as a function of frequency shows a cutoff frequency that decreases almost linearly to the slitwidth, giving that almost successful shielding is only possible when the slitwidth is smaller than 1 micron.

Effect of Impurities on Stress Induced Void Formation in Al-1% Si Conductors

  • Lee, Seong-Min
    • Transactions on Electrical and Electronic Materials
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    • 제2권3호
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    • pp.12-17
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    • 2001
  • It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal. It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal.

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Design for High Gain Spiral Antenna by Added Conical Cavity Wall

  • Jeong, Jae-Hwan;Min, Kyeong-Sik;Kim, In-Hwan
    • Journal of electromagnetic engineering and science
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    • 제13권3호
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    • pp.165-172
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    • 2013
  • This paper describes a design for a spiral antenna with a conical wall to obtain the high gain. The gain and the axial ratio of the spiral antenna were improved by a new design that included a conical wall and an optimized Archimedean slit on the ground plane in a conventional antenna with a circular cavity wall and a 4.5-turn slit. A gain improvement of 9.5 dBi higher and a good axial ratio of 1.9 dB lower were measured by the added conical wall and the newly designed slit from the current distribution control on the ground plane, respectively. The measured return loss, gain and axial ratio of the proposed antenna showed a good agreement with the simulated results. The proposed antenna will be applied to a non-linear junction detector system.

$Si_3N_4$를 이용한 금속-유전체-금속 구조 커패시터의 유전 특성 및 미세구조 연구 (A Study on the Dielectric Characteristics and Microstructure of $Si_3N_4$ Metal-Insulator-Metal Capacitors)

  • 서동우;이승윤;강진영
    • 한국진공학회지
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    • 제9권2호
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    • pp.162-166
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    • 2000
  • 플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 $Si_3N_4$ 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커패시터를 구현하였다. 유전체인 $Si_3N_4$와 전극인 Al의 계면반응을 억제시키기 위해 티타늄 나이트라이드(TiN)를 확산 장벽으로 사용한 결과 MIM 커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. 커패시턴스와 전류전압 특성분석으로부터 양질의 MIM 커패시터 특성을 보이는 $Si_3N_4$의 최소 두께는 500 $\AA$이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. 투과전자현미경(transmission Electron Microscope, TEM)을 이용한 단면 미세구조 관찰을 통해 $Si_3N_4$층의 두께가 500 $\AA$ 미만인 커패시터의 경우에 TiN과 $Si_3N_4$의 계면에서 형성되는 슬릿형 공동(slit-like void)01 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 열 유기 잔류 응력(thermally-induced residual stress) 계산에 기초하여 공동의 형성 기구를 규명하였다.

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