• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.331-335
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• 1999

The transition metal oxides have been of interest as bifunctional electrocatalysts for bifunctional air electrodes. The amorphous citrate precursor (ACP) process has been optimized to prepare perovskite (La0.6Ca0.4CoO3) and pyrochlore (Pb2Ru2O6) powders with high surface area, and consequent improvement of The electrocatalytic performance in an air electrode with thermal treatment. PTFE -bonded gas diffusion electrodes loaded with perovskitc and pyrochlore catalysts showed good bifunctional performances. The electrodes were fairly stable up to 100 hour in the galvanostatic mode at ${\pm}25mA/cm^2$, from which these electrodes offer promise as practical bifunctional air electrodes.

• Applied Chemistry for Engineering
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• v.16 no.5
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• pp.628-634
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• 2005

Zirconia-alumina polymer precursor was prepared from zirconium acetylacetonate (ZA). paluminium nitrate (AN), polyethylene glycol (PEG), and ethyl alcohol via an organic-inorganic solution technique. The thermal properties and viscosity of the polymer precursor were measured by differential scanning calorimetry (DSC), thermograbimetric analyzer (TGA), and dynamic viscometer. The vigorous exothermic reaction with volume expansion occurred at $140^{\circ}C$. The volume expansion was caused by abrupt decomposition of the organic group in metal compounds and the metal ions-PEG reaction. The evidences for these reactions were confirmed by FT-IR and $^{13}C$ solid NMR results. The peak intensity at N-O, O-H and C=C decreased with increasing temperature. This indicated that the decomposition of metal compounds and the metal ions-PEG reaction occurred during the vigorous exothermic reaction. At $800^{\circ}C$ for 2 h, the porous powders transformed to the crystalline $ZrO_2-Al_2O_3$ composites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.956-959
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• 2005

High Tc superconducting with a BiSrCaCuO was prepared by the titrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. X-tay diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Progress in Superconductivity and Cryogenics
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• v.7 no.3
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• pp.5-8
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• 2005

Superconducting YBCO films were successfully fabricated by MOD process using F-free Cu precursor solution. In this study. a chemically modified precursor solution for MOD Processing was synthesized using metal-organic salts and F-free Cu precursor. It was shown that crack-free and uniform precursor films were formed after calcination in humidified oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore. YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ prepared on a $LaA1O_3$ single crystal substrate $(10mm{\times}10mm)$ gives transport Ic of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.393-400
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• 2014

NiO catalysts were successfully coated onto FeCrAl metal alloy foam as a catalyst support via a dip-coating method. To demonstrate the optimum amount of NiO catalyst on the FeCrAl metal alloy foam, the molar concentration of the Ni precursor in a coating solution was controlled, with five different amounts of 0.4 M, 0.6 M, 0.8 M, 1.0 M, and 1.2 M for a dip-coating process. The structural, morphological, and chemical bonding properties of the NiO-catalyst-coated FeCrAl metal alloy foam samples were assessed by means of field-emission scanning electron microscopy(FESEM), scanning electron microscopy-energy dispersive spectroscopy(SEM-EDS), X-ray diffraction(XRD), and X-ray photoelectron spectroscopy(XPS). In particular, when the FeCrAl metal alloy foam samples were coated using a coating solution with a 0.8 M Ni precursor, well-dispersed NiO catalysts on the FeCrAl metal alloy foam compared to the other samples were confirmed. Also, the XPS results exhibited the chemical bonding states of the NiO phases and the FeCrAl metal alloy foam. The results showed that a dip-coating method is one of best ways to coat well-dispersed NiO catalysts onto FeCrAl metal alloy foam.

• Journal of the Korean Magnetic Resonance Society
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• v.21 no.4
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• pp.139-144
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• 2017

Ni(II) containing coenzyme F430 catalyzes the reduction of $CO_2$ in methanogen. Macrocyclic Ni(II) complexes with N,O shiff bases have been received a great attention since metal ions play an important role in the catalysis of reduction. The reducing power of metal complexes are supposed to be dependent on oxidoreduction state of metal ion and structural properties of macrocyclic ring moiety that can enhance electrochemical properties in catalytic process. Six different ${\alpha}$-oximinoketone compounds, precursor of macrocyclic ligands used in $CO_2$ reduction coenzyme F430 model complexes, were synthesized with yields over 90% and characterized by NMR. The molecular geometries of ${\alpha}$-oximinoketone analogues were fully optimized at Beck's-three-parameter hybrid (B3LYP) method in density functional theory (DFT) method with $6-31+G^*$ basis set using the ab initio program. In order to understand molecular planarity and substitutional effects that may enhance reducing power of metal ion are studied by computing the structure-dependent $^{13}C$-NMR chemical shift and comparing with experimental results.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.