• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.252-252
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• 2011

최근 주목받고 있는 amorphous gallium-indium-zinc-oxide (a-GIZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT에 비해 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭을 가지므로 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 뿐만 아니라, 일반적인 Poly-Si TFT는 자체적으로 가지는 결정성에 의해 대면적화 시 균일성이 좋지 못하지만 GIZO는 비정질상 이기 때문에 백플레인의 대면적화에 유리하다는 장점이 있다. 이러한 TFT를 제작하기 전, 전기적 특성에 대한 정보를 얻거나 예측하는 것이 중요한데, 이에 따라 고안된 구조가 바로 metal point contact FET (pseudo FET)이다. pseudo FET은 소스/드레인 전극을 따로 증착할 필요 없이 채널을 증착한 후, 프로브 탐침을 채널의 표면에 적당한 압력으로 접촉시켜 전하를 공급하는 소스와 드레인처럼 동작시킬 수 있다. 따라서 소스/드레인을 증착하거나 lithography와 같은 추가적인 공정을 요구하지 않아 소자의 특성을 보다 간단하고 수월하게 분석할 수 있다는 장점이 있다. 본 연구에서는 p-type 기판위에 100nm의 oxidation SiO2를 게이트 절연막으로 사용하는 a-GIZO pseudo FET를 제작하였다. 소자 제작 후, 열처리 온도에 따른 전기적 특성을 분석하였고, 열처리 조건은 30분간 N2 분위기에서 실시하였다. 열처리 후 전기적 특성 분성 결과, 450oC에서 가장 낮은 subthreshold swing 값과 게이트 전압의 더블 스윕 후 문턱 전압의 변화가 거의 없음을 확인하였다.

• Journal of Biosystems Engineering
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• v.26 no.1
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• pp.47-56
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• 2001

In order to prevent the possibility of mixing of metal powder during food grinding processing with the metal roll mill this study was conducted to develope the materials of ceramics roll as a substitute of gray cast iron mill. Since the ceramics is brittle material and can be broken easily by a crack, it was needed to develope engineering ceramics roll materials with high elastic modulus and fracture toughness. Adding 0∼50 wt% Al$_2$O$_3$as densification additives to porcelain body material and forming the ceramics an different condition, mechanical properties were evaluated. The material structure’s densification process was analyzed by SEM and XRD. The evaluation of the mechanical properties of ceramics roll materials were compared and analyzed by non-destructive test using Young’s modulus and destructive test using 3-point bending strength and fracture toughness. The results showed several correlative results. Porcelain body material with 40 wt% Al$_2$O$_3$content heated at 1,200$\^{C}$ for 5h was high bulk density of 2.77, Young’s modulus of 118.4Gpa, 3-point bending strength of 137 MPa and fracture toughness of 2.88 MPa$.$m$\^$$\sfrac{1}{2}$/ . After analyzing the relationship between non-destructive test and destructive test, the coefficient of determination was more than 0.9. Therefore, the evaluation of non-destructive test by ultrasonic was turned out to be feasible in evaluating the mechanical properties of ceramics.

• Journal of Welding and Joining
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• v.17 no.6
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• pp.25-31
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• 1999

Stainless steel sheets are commonly used for vehicles such as the bus and the train. These are mainly fabricated by spot-welding. By the way, its fatigue strength is lower than base metal due to high stress concentration at the nugget. edge of the spot-welding. By the way, its fatigue strength is lower than base metal due to high stress concentration at the nugget edge of the spot-welding point. Especially, it is influenced by welding conditions as well as geometrical factors of spot welded joint. Therefore, it is not too much to say that structural rigidity and strength of spot-welded structures is decided by fatigue strength of spot welded lap joint. Thus, it is necessary to establish a reasonable and systematic long life design criterion for the spot-welded structure. In this study, numerical stress analysis was performed by using 3-dimensional finite element model on IB-type spot-welded lap joint of 304 stainless steel sheet under tension-shear load. Fatigue tests were also conducted on them having various thickness, joint angle, lapped length, and width of the plate. From the results, it was found that fatigue strength of IB-type spot-welded lap joints was influenced by its geometrical factors, however, could be systematically rearranged by maximum principal stress ({TEX}$σ_{1max}${/TEX}) at the nugget edge of the spot-welding point.

• ETRI Journal
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• v.42 no.5
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• pp.773-780
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• 2020

A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

• Journal of Soil and Groundwater Environment
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• v.17 no.4
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• pp.27-35
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• 2012

Recently, there has been increasing interest in the use of rain garden systems as environmentally friendly ecological infrastructures for controlling stormwater runoff and managing non-point source pollution and information for the contamination of soil and plants can be essential for sustainable rain garden management. In this study, four rain garden mesocosms, namely single species planting with Rhododendron lateritium, single species planting with Zoysia japonica, mixed planting with R. lateritium and Z. japonica, and control without plants, were tested to investigate the change in concentrations of nutrients (N and P) and heavy metals (Cd, Cu, Pb, and Ni) in the soil and plants used in the rain garden system. The presence of plants resulted in greater nutrient retention in soil and lower potential leaching from the system. All systems showed an increase in the heavy metal concentrations in soil. The concentrations of most heavy metals were found to be higher in the herbaceous plants (Z. japonica) than in the shrubs (R. lateritium). The belowground part (root) had higher heavy metal concentrations than the aboveground part (leaf) but also showed a potential increase in leaves, and hence, careful plant management should be considered during rain garden operation.

• International Journal of Korean Welding Society
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• v.4 no.1
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• pp.46-52
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• 2004

To combine the mechanical advantages of ceramics with those of metals, one often uses both materials within one composite component. But, as known, they have different material properties and fracture behaviors. In this study, a four-point bending test is carried out on $Si_3N_4$ joined to ANSI 304L stainless steel with a Ti-Ag-Cu filler and a Cu interlayer at room temperature to evaluate their longitudinal strain behaviors. And, to detect localized strain, a couple of strain gages are pasted near the joint interfaces of the ceramic and metal sides. The normal strain rates are varied from $3.33{\times}10^5$ to $3.33{\times}10^{-1}s^{-1}$ Within this range, the experimental results showed that the four-point bending strength and the deflection of the interlayer increased with increasing the strain rate.

• Proceedings of the Korean Society of Surveying, Geodesy, Photogrammetry, and Cartography Conference
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• 2007.04a
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• pp.31-35
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• 2007

RFID is going to be the core technology for contact-less information transfer means in the era of ubiquitous. Up until recent days, the RFID didn't fit to be used in outdoor environment due to the fact that it was developed for logistics which does not require stability in outdoor. But recently, requests for the RFID to be used in the outdoor environment have increased, and this laid the foundation for the development of outdoor tags, including MetalTag, which can be utilized in many different ways. In this research, to provide information on the control point using the RFID at the sight, RFID tags, which can place at the control point, and PDA based system were developed.

• ETRI Journal
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• v.32 no.2
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• pp.342-344
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• 2010

A novel, maskless, low-volume bumping material, called solder bump maker, which is composed of a resin and low-melting-point solder powder, has been developed. The resin features no distinct chemical reactions preventing the rheological coalescence of the solder, a deoxidation of the oxide layer on the solder powder for wetting on the pad at the solder melting point, and no major weight loss caused by out-gassing. With these characteristics, the solder was successfully wetted onto a metal pad and formed a uniform solder bump array with pitches of 120 ${\mu}m$ and 150 ${\mu}m$.

• BMB Reports
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• v.43 no.5
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• pp.319-324
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• 2010

Experimental bioinformatics data obtained from an E. coli cell-based eukaryotic protein purification experiment were analyzed in order to identify any bottleneck as well as the factors affecting the target purification. All targets were expressed as His-tagged maltose-binding protein (MBP) fusion constructs and were initially purified by immobilized metal affinity chromatography (IMAC). The targets were subsequently separated from the His-tagged MBP through TEV protease cleavage followed by a second IMAC isolation. Of the 743 total purification trials, 342 yielded more than 3 mg of target proteins for structural studies. The major reason for failure of target purification was poor TEV proteolysis. The overall success rate for target purification decreased linearly as cysteine content or isoelectric point (pI) of the target increased. This pattern of pI versus overall success rate strongly suggests that pI should be incorporated into target scoring criteria with a threshold value.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.411-414
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• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.