• 상하수도학회지
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• 제19권2호
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• pp.200-208
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• 2005

In this study, a new submerged membrane bioreactor process packed with granular sulfur (MBR-GS) was operated to identify the biological nitrogen removal behaviors with plating wastewater containing high-strength $NO_3{^-}$ concentration. The continuous denitrification was carried out at $20^{\circ}C$ with various nitrogen loading rates using synthetic wastewater, which composed of $NO_3{^-}$ and $HCO_3{^-}$, but also actual plating wastewater, which was collected from the effluent of the H metal plating company. As a result, high-rate denitrification in the range of $0.8kg\;NO_3{^-}-N/m^3\;day$ was accomplished at nitrogen loading rate of $0.9kg\;NO_3{^-}-N/m^3\;day$ using synthetic wastewater. Also, higher-rate denitrification with actual plating wastewater was achieved up to $0.91kg\;NO_3{^-}-N/m^3\;day$ at the loading rate of $1.11kg\;NO_3{^-}-N/m^3\;day$. Additionally, continuous filtration was possible during up to 30 days without chemical cleaning in the range of 20 cmHg of transmembrane pressure. On the basis of the proposed stoichiometry, ${SO_4}^{2-}$ production could be estimated efficiently, while observed alkalinity consumption was somewhat lower than theoretical value. Consequently, a new process, MBR-GS is capable of high-rate autotrophic denitrification by compulsive flux and expected to be utilized as an alternative of renovation techniques for nitrogen removal from not only plating wastewater but also municipal wastewater with low C/N ratio.

• 한국표면공학회지
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• 제49권6호
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• 자원리싸이클링
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• 제13권2호
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• pp.9-15
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• 2004

석유화학공정으로부터 폐기되는 폐산화철촉매를 이용하여 도금합성폐수중 크롬회수에 관한 연구를 회분식과 연속식으로 실시하였다. 도금합성제수 중 $CrO _{4}^{-2}$ 형태의 음이온으로 존재하는 6가 크롬은 폐산화철촉매의 등전점(pH 3.0)이하에서 폐촉매와 물리적 흡착을 한다. 한편, 6가 크롬은 pH 3.0 이상에서도 폐촉매의 수산화철과 산화환원반응에 의해 일부 환원되어 $Cr(OH)_3$로 침전한다. 컬럼을 이용한 크롬 연속회수실험에서 크롬합성폐수의 pH가 0.5∼2.0일 때 폐촉매의 크롬흡착량은 2.0∼2.3g/L이며, pH가 3.0에서는 1.5g/L이었다. 폐수 중 크롬농도가 50∼500mg/L로 높아질수록 폐촉매에 흡착한 크롬누적량은 1.29∼8.56g/L로 증가하지만, 유속이 30∼80 ml/mm으로 증가하여도 크롬 흡착누적량은 2.21∼2.49 mg/L로 거의 유사하였다.

• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.85-95
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• 2023

In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li₇La₃Zr₂O₁₂, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10^-3 S cm^-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li⁺ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li⁺ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO₄ (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g^-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.251-254
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• 2002

The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

• 한국물환경학회지
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• 제26권4호
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• pp.687-690
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• 2010

The objective of this study is to investigate the effect of aldehyde compounds and ploysulfide as accelerating agents on removal of heavy metals and CN in plating wastewater. As a results of the experiments, the removal efficiency of cyanide using the formaldehyde type of aldehydes was the highest at pH 9. Next types were sodium formaldehyde bisulfite addut> paraldehyde> paraformaldehyde. Also, optimum pH and dosage for treating the residual heavy metals by using polysulfide were pH 9 and 30 mg/L, respectively. The removal efficiencies of cyanide, chromium, zinc and copper were above 96.7% at optimum condition.

• 한국레이저가공학회지
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• 제3권2호
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• 한국재료학회지
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• 제6권6호
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• pp.568-575
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• 1996

The double sided buried contact(DSBC)silicon solar cell processing requires doping of the rear and front grooves with boron and phosphorus respectively. The successful electroless plating of these grooves with the appropriate metals haave been found to depend on the boron conditions for the rear fingers. However, an increased understanding of electroless plating has removed this restriction. Thus the DSBC cells using different boron conditions can be electrolessly plated with ease. This paper presents the recent work done on metallizing the double sided buried contact silicon solar cells with heavily doped boron grooves. The cells results indicate that, the heavier the boron grooves, the poorer the cell performance because of the probable higher metal contact recombination associated with boron grooves.