• Title/Summary/Keyword: Metal oxide addition

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Preparation and Analysis of High Functional Silicone Hydrogel Lens Containing Metal Oxide Nanoparticles by Photopolymerizaion

  • Heo, Ji-Won;Sung, A-Young
    • Korean Journal of Materials Research
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    • v.32 no.4
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    • pp.193-199
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    • 2022
  • In this study, lenses are fabricated using various nanomaterials as additives to a silicone polymer made with an optimum mixing ratio and short polymerization time. In addition, PVP is added at a ratio of 1 % to investigate the physical properties according to the degree of dispersion, and the compatibility with hydrophobic silicone and the possibility of application as a functional lens material are confirmed. The main materials are SIU as a silicone monomer, DMA, a hydrophilic copolymer, EGDMA as a crosslinking agent, and 2H2M as a photoinitiator. Holmium (III) oxide, Europium (III) oxide, aluminum oxide, and PVP are used. When Holmium (III) oxide and Europium (III) oxide are added based on the Ref sample, the characteristics of the lens tend to be similar overall, and the aluminum oxide shows a tendency slightly different from the previous two oxides. This material can be used as a silicone lens material with various nano oxides and polyvinylpyrrolidone (PVP) acting as a dispersant.

A study on Improvement of sub 0.1$\mu\textrm{m}$VLSI CMOS device Ultra Thin Gate Oxide Quality Using Novel STI Structure (STI를 이용한 서브 0.1$\mu\textrm{m}$VLSI CMOS 소자에서의 초박막게이트산화막의 박막개선에 관한 연구)

  • 엄금용;오환술
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.729-734
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    • 2000
  • Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

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The Effect of Fe-Oxide Addition on the Sintering Properties of Cast Iron Powder (주철분말(鑄鐵粉末)의 소결성에(燒結性) 미치는 산화철(酸化鐵) 첨가(添加)의 효과(效果))

  • Kim, Hyung-Soo;Kim, Chul-Bohm;Ra, Hyung-Young
    • Journal of Korea Foundry Society
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    • v.10 no.1
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    • pp.64-70
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    • 1990
  • In order to lower the cabon content of sintered products below the solubility of austenite, Fe-oxide was added to cast iron powder of which matrix was pearlite. And the effects of it on some sintering properties and mechanical properties were investigated. Roughly speaking, the linear shrinkage, density, and tensile strendth of sintered properties increased as the sintering temperature became higher, the size distribution of powder became finer, and the amount of Fe-oxide added became less. The maximum tensile strength of sintered products was $78㎏f/mm^2$ more or less, of which carbon content was 1.4% and sintering temperature was $1180^{\circ}C$.

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The Instability Behaviors of Spray-pyrolysis Processed nc-ZnO/ZnO Field-effect Transistors Under Illumination (스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터의 광학적 노출에 대한 열화 현상 분석)

  • Junhee Cho
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.78-82
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    • 2023
  • Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

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Metal work function dependent photoresponse of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) (금속(Al, Cr, Ni)의 일함수를 고려한 쇼트키 장벽 트랜지스터의 전기-광학적 특성)

  • Jung, Ji-Chul;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.355-355
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    • 2010
  • We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of ${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$<2000nm).

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Effects of Metal Oxides on the Characteristics for Infrared Radiator of Porous Cordierite (다공성 코디어라이트의 원적외선 방사특성에 미치는 금속산화물의 첨가효과)

  • 이상욱;박재성;남효덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.225-228
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    • 2000
  • Addition effects of metal oxide on the characteristics of infrared radiator of porous cordierite have been investigated. The porosity was increased with adding the graphite for 2MgO $.$ 2A1$_2$O$_3$$.$5SiO$_2$. The microstructure and the spectral emissivity were investigated as a function of metal oxide additives. The prosity and the emissivity were decreased with increasing amounts of CuO additives. The prosity and the emissivity were increased with increasing amounts of CoO, MnO$_2$ additives. The infrared radiator of cordierite system which spectral emissivity was 0.927 and 0.928 at from 5$\mu\textrm{m}$ to 20$\mu\textrm{m}$ wavelength as a 9wt% of CoO and MnO$_2$ additives.

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Chromatic Characteristics of Copper Glaze as a Function of Copper Oxide Addition and Sintering Atmosphere

  • No, Hyunggoo;Kim, Soomin;Kim, Ungsoo;Cho, Wooseok
    • Journal of the Korean Ceramic Society
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    • v.54 no.1
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    • pp.61-65
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    • 2017
  • Examined in this study were the effects of copper oxide (II) addition and sintering conditions on the chromatic characteristics of copper glaze. Oxidatively sintered samples exhibited the negative increase of $CIEa^*$ and the positive increase of $CIEb^*$ with the increase of CuO concentration, leading to Green and Green-Yellow coloration. On the other hand, $CIEa^*$ and $CIEb^*$ of reductively sintered samples were positively increased in direct proportion. The green color of oxidatively sintered samples was originated from the $Cu^{2+}$ ions formed by the dissolution of CuO. The reductively sintered samples resulted in dull tone red color with low chroma. Such behavior seems to be influenced by the interplay of metal Cu aggregation, metal Cu globule, and $Cu_2O$ formed in the glaze layer through the redox interaction of CuO during the sintering process.

Characterization of ultrathin ONO stacked dielectric layers for NVSM (NVSM용 초박막 ONO 적층 유전층의 특성)

  • 이상은;김선주;서광열
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.424-430
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    • 1998
  • Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

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Preparation and capacitance properties of graphene based composite electrodes containing various inorganic metal oxides

  • Kim, Jeonghyun;Byun, Sang Chul;Chung, Sungwook;Kim, Seok
    • Carbon letters
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    • v.25
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    • pp.14-24
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    • 2018
  • Electrochemical properties and performance of composites performed by incorporating metal oxide or metal hydroxide on carbon materials based on graphene and carbon nanotube (CNT) were analyzed. From the surface analysis by field emission scanning electron microscopy and field emission transmission electron microscopy, it was confirmed that graphene, CNT and metal materials are well dispersed in the ternary composites. In addition, structural and elemental analyses of the composite were conducted. The electrochemical characteristics of the ternary composites were analyzed by cyclic voltammetry, galvanostatic charge-discharge tests, and electrochemical impedance spectroscopy in 6 M KOH, or $1M\;Na_2SO_4$ electrolyte solution. The highest specific capacitance was $1622F\;g^{-1}$ obtained for NiCo-containing graphene with NiCo ratio of 2 to 1 (GNiCo 2:1) and the GNS/single-walled carbon $nanotubes/Ni(OH)_2$ (20 wt%) composite had the maximum specific capacitance of $1149F\;g^{-1}$. The specific capacitance and rate-capability of the $CNT/MnO_2/reduced$ graphene oxide (RGO) composites were improved as compared to the $MnO_2/RGO$ composites without CNTs. The $MnO_2/RGO$ composite containing 20 wt% CNT with reference to RGO exhibited the best specific capacitance of $208.9F\;g^{-1}$ at a current density of $0.5A\;g^{-1}$ and 77.2% capacitance retention at a current density of $10A\;g^{-1}$.

Purification on the Leaching Solution of the Crude Zinc Oxide Recovered from the Reduction of EAF Dust (전기로제강분진으로부터 환원휘발된 조산화아연의 침출용액 정액에 관한 연구)

  • Youn Ki-Byoung
    • Resources Recycling
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    • v.13 no.1
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    • pp.22-27
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    • 2004
  • Purification on the leaching solution of the crude zinc oxide obtained by the reduction of EAF dust has been carried out. Pb and Cd ions in the leaching solution were precipitated and removed from the solution by the addition of zinc metal powder. The purification condition for electrowinning to obtain the high purity zinc metal was investigated by analyzing the effects of Pb and Cd ion concentrations on the contents of impurities in the recovered zinc metal. The 3 N purity zinc metal was obtained at the electrolysis condition of the concentrations of Pb less than 2 ppm and Cd less than 0.1 ppm in the purified solution. For this purification, the amounts of zinc metal powder more than 8.5 g/l should be added in the crude zinc oxide leached solution.