• Korean Journal of Materials Research
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• v.9 no.3
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• pp.257-262
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• 1999

The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500­~1300sccm) and the growth temperature(TEX>$950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature in­creased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.835-843
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• 2018

In this work, we report a delta rosette strain sensor based on highly stretchable silver nanowire (AgNW) percolation piezoresistors. The proposed rosette strain sensors were easily prepared by a facile two-step fabrication route. First, three identical AgNW piezoresistive electrodes were patterned in a simple and precise manner on a donor film using a solution-processed drop-coating of the AgNWs in conjunction with a tape-type shadow mask. The patterned AgNW electrodes were then entirely transferred to an elastomeric substrate while embedding them in the polymer matrix. The fabricated stretchable AgNW piezoresistors could be operated at up to 20% strain without electrical or mechanical failure, showing a maximum gauge factor as high as 5.3, low hysteresis, and high linearity ($r^2{\approx}0.996$). Moreover, the sensor responses were also found to be highly stable and reversible even under repeated strain loading/unloading for up to 1000 cycles at a maximum tensile strain of 20%, mainly due to the mechanical stability of the AgNW/elastomer composites. In addition, both the magnitude and direction of the principal strain could be precisely characterized by configuring three identical AgNW piezoresistors in a delta rosette form, representing the potential for employing the devices as a multidimensional strain sensor in various practical applications.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.99-101
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• 2000

The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.12-18
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• 2008

Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.44-53
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• 1999

This paper are reported a methodology and application for extracting parasitic capacitances in a multi-level interconnect semiconductor structure by a numerical technique. To calculate the parasitic capacitances between the interconnect lines, we employed finite element method (FEM) and calculated the distrubution of electric potential in the inter-metal layer dielecric(ILD) by solving the Laplace equation. The three-dimensional multi-level interconnect structure is generated directly from two-dimensional mask layout data by specifying process sequences and dimension. An exemplary structure comprising two metal lines with a dimension of 8.0$\times$8.0$\times$5.0$\mu\textrm{m}^3/TEX>, which is embedded in three dielectric layer, was simulated to extract the parasitic capacitances. In this calculation, 1960 nodes with 8892 tetrahedra were used in ULTRA SPARC 1 workstation. The total CPU time for the simulation was 28 seconds, while the memory size of 4.4MB was required.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.2
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• pp.101-108
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• 2008

This study attempted to develop the technology by gaseous ozone for decontaminating building affected by a model of biological weapon agent(Bacillus subtilis spores) instead of Bacillus anthracis spore. The use of ozone is attractive method from a practical point of view of decontamination procedure since it has strong oxidation power but no residue after application. We examined the disinfection efficiency of gaseous ozone to Bacillus subtilis spores which suspension was sprayed on different material surfaces and dried. Three different types of gaseous ozone was applied : dry ozone, dry ozone with humidified air, and water bubbled wet ozone. Dry ozone(1500ppm) failed to achieve any significant inactivation for 2hrs. However, six log reduction of B. subtilis spore was achieved within 30min by 1500ppm of water bubbled wet ozone. This result shows the noticeable inactivation efficiency by gaseous ozone compared with previous studies. Good performance by wet ozone was also found for military material surface.(i.e. : gas mask hood, protective garments, army peinted metal surface).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.129-132
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• 2000

The PDP(Plasma Display Panel) barrier rib material on the glass substrate was patterned for fabrication of the PDP cell using Nd:YAG laser(1064 nm) which can generate the second(532 nm) and forth(266 nm) harmonic wave by HGM(harmonic generation modules). At a scan speed of 20 ${\mu}m/s$ with the second harmonic wave(532 nm) of Nd:YAG laser, the etching threshold laser fluence of the PDP material was 6.5 $mJ/cm^2$ and a sample(thickness = 180 ${\mu}m$) on the glass substrate was removed clearly at a laser fluence of 19.5 $mJ/cm^2$. In order to increase the throughput of the fabrication we divided a single-beam into multi-beams by using a metal mask between the sample and the focusing lens. As a result, 10 lines of PDP cell were formed by one laser beam scanning at a scan speed of 200 ${\mu}m/s$ and a laser fluence of 2.86 $J/cm^2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.