• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.167-167
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• 2009

결정질실리콘 태양전지를 제조함에 있어 실리콘 기판 내의 금속 불순물들은 소자제작 시에 성능 저하의 원인으로 작용한다. 따라서 본 연구에서는 실리콘 기판에 Cr, Cu, Ni 불순물을 강제 오염시킨 후 태양전지를 제작하여 각각의 불순물에 대한 특성을 조사 하였다. p-type 실리콘 기판을 오염시키기 위해 일정 시간동안 표준용액에 담근 후 질소 분위기에서 열처리 하여 불순물을 확산시켰다. 이후 상용 공정을 이용하여 태양전지를 제작하고 기판내 금속불순물 농도에 따른 태양전지의 동작특성을 분석하였다.

• Resources Recycling
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• v.18 no.6
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• pp.38-45
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• 2009

Dissolution characteristics of magnesite ore in hydrochloric acid solution and removal of impurity were investigated. The dissolution yield increased with increasing temperature and with decreasing particle size. The optimum conditions for dissolution were found to be reaction period of 120 min, reaction temperature of $80^{\circ}C$ and mean particle size of 100. Under optimal dissolution condition the extraction of Mg was 98%. It was found that most of Si and Al exist in the residue, and they can be removed by filtering. Dissolved impurity ions were precipitated as metal hydroxides by pH adjustment. Polymers were used as coagulants for metal hydroxides and the suitable coagulant dosage was 1mg/100ml of non-ionic polymer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.355-357
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• 2011

Several researches and patents has been published on gathering impurity from both upper and lower places of melting zinc bath and collecting them using melting resolution, but they have never discovered work model applied in the field. This paper proposes an effective extraction algorithm for hazardous work robot that is designed to detect impurity in steel manufacturing process.

• Resources Recycling
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• v.15 no.6 s.74
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• pp.16-24
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• 2006

In this study, the neutralization and dechlorination process of MWI(Municipal Waste Incinerator) fly ash with $H_2SO_4$ are investigated to recover HCI, which is delivered from the reaction of chloride in the ash and sulfuric acid. The coarse crystalline gypsum and fine impurity containing heavy metal are also separated by 500# wet screening followed by recrystallization of the dechlorinated ash mainly made of $CaSO_4$. As a results, Using 100g MWI fly ash and 85g cone. sulfuric acid as raw material, 52.6g hydrochloric acid with 35% assay and 116.9g crystalline gypsum with 98% or more assay are recovered. In this process, 7.85g fine impurity containing heavy metal and 2.65g coarse impurity are also separated.

• Clean Technology
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• v.16 no.1
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• pp.1-11
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• 2010

As crude oil with heavier and/or highly oxidized components prevails, purification technologies such as desulfurization, denitrilization and demetalization have become important issues to control contents of sulfur and other impurities affecting the quality of petroleum. Also, the importance of catalyst technologies related with crude oil purification has been emphasized to control the production and yield of products. In this paper, technology trends of impurity removal such as sulfur, nitrogen and metal components from crude oil and catalysts related with purification of crude oil were studied through patent analysis. The patents published or registered in Korea, U. S. A., Japan, and Europe from mid 1970's to 2009 had been analyzed based on the application tendency, the distribution of major applicants, and their active indices, etc. The technology flow was figured out to see the technology trends.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

• Advances in nano research
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• v.2 no.2
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• pp.77-88
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• 2014

Solvothermal treatment of late transition metal acetylacetonates in a novel medium composed either of pure acetophenone or acetophenone mixtures with amino alcohols offers a general approach to uniform hydrophilic metal nanoparticles with high crystallinity and low degree of aggregation. Both pure metal and mixed-metal particles can be accesses by this approach. The produced materials have been characterized by SEM-EDS, TEM, FTIR in the solid state and by Nanoparticle Tracking Analysis in solutions. The chemical mechanisms of the reactions producing nanoparticles has been followed by NMR. Carrying out the process in pure acetophenone produces palladium metal, copper metal with minor impurity of $Cu_2O$, and NiO. The synthesis starting from the mixtures of Pd and Ni acetylacetonates with up to 20 mol% of Pd, renders in minor yield the palladium-based metal alloy along with nickel oxide as the major phase. Even the synthesis starting from a mixed solution of $Cu(acac)_2$ and $Ni(acac)_2$ produces oxides as major products. The situation is improved when aminoalcohols such as 2-aminoethanol or 2-dimethylamino propanol are added to the synthesis medium. The particles in this case contain metallic elements and pairs of individual metals (not metal alloys) when produced from mixed precursor solutions in this case.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.7
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.