• 전기학회논문지
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• 제60권6호
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.49-53
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• 2017

Cl 불순물 도핑에 따른 $SnSe_2$ 이차원 전자소재의 고온(300~450 K) 전도 물성 변화를 고찰하였다. 고상합성법을 통하여, 도핑이 없는 $SnSe_2$ 소재와 Cl이 도핑된 $SnSe_{1.994}Cl_{0.006}$ 소재를 합성하였으며, X선 회절 실험을 통하여, 두 재료 모두 불순물 없는 단일상이 형성되었음을 확인하였다. 비저항의 온도의존성 측정을 통하여, 전기 전도 mechanism이 Cl 도핑에 의해 hopping 전도에서 축퇴 전도로의 전이가 일어남을 관찰할 수 있었으며, 홀효과 측정을 통해 그러한 전도 mechanism의 전이가, Cl의 효과적인 donor 역할에 따른 자유전자의 농도 증가에서 기인한 것임을 확인하였다. 온도에 따른 전자이동도의 변화 분석을 통하여, 도핑이 없는 $SnSe_2$의 고온 전기 전도는 grain boundary 산란이 지배적인 영향을 미치는 반도체 전도 특성을 보이는 반면, Cl 도핑에 따라 grain boundary 산란 효과가 저하되는 금속 전도 특성을 보인다는 것을 알 수 있었다.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1284-1291
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• 2006

기상 휘발성 유기화합물인 아세톤과 포름알데히드에 대한 분해반응을 $TiO_2$ 광촉매에 귀금속을 혼합 담지하여 분해능을 연구하였다. 아세톤의 경우 $TiO_2$에 팔라디움 혼합담지에 의하여 분해 반응성이 개선되었으며, 일반적인 광촉매 반응에 있어서 수분의 첨가시 OH기의 형성에 따른 분해반응성의 증가를 실험한 결과 아세톤의 경우 수분의 흡착에 의하여 분해반응성이 감소하는 것으로 나타났다. 아세톤의 경우 $45^{\circ}C$가 최적으로 나타났으며, 포름알데히드의 경우는 $75^{\circ}C$가 최적으로 나타났다. 귀금속 담지에 의한 영향에서는 아세톤의 경우 Pd를 $TiO_2$의 중량비 1wt%를 첨가한 경우 반응성의 향상을 보았으며, 포름알데히드의 경우 Pt가 반응성의 향상을 나타내었다.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.148-158
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• 2019

The corrosion protection of AA2024 PPy coated samples doping with nanosized metal oxides, including $TiO_2$ and $CeO_2$ nanoparticles and $Nd_2O_3$ nanorods, during exposure to the solutions of 0.1 M $H_2SO_4$ and 3.5% NaCl was evaluated by electrochemical impedance spectroscopy (EIS) and linear polarization resistance (LPR) techniques. The nanorods of $Nd_2O_3$ were synthesized by cathodic pulse electrochemical deposition technique. The barrier properties of the different PPy coatings containing nanosized metal oxides immersed in $H_2SO_4$ solution were ranked as follows: $Nd_2O_3$ > $TiO_2$ > $CeO_2$. Therefore, the $Nd_2O_3$ coating sample provided the highest corrosion protection at any time of immersion up to 72 hours after immersing in $H_2SO_4$ solution. On the other hand, the $CeO_2$ coating sample displayed the best anticorrosive properties among the other coating samples after immersion in NaCl solution up to 28 days. This is due to the inhibition effect of cerium ions on aluminum alloys at near-neutral solutions.

• 한국재료학회지
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• 제33권4호
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• pp.135-141
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• 2023

The volatilization of alkali ions in (K,Na)NbO₃ (KNN) ceramics was inhibited by doping them with alkaline earth metal ions. In addition, the grain growth behavior changed significantly as the sintering duration (t_s) increased. At 1,100 ℃, the volatilization of alkali ions in KNN ceramics was more suppressed when doped with alkaline earth metal ions with smaller ionic size. A Ca²⁺-doped KNN specimen with the least alkali ion volatilization exhibited a microstructure in which grain growth was completely suppressed, even under long-term sintering for t_s = 30 h. The grain growth in Sr²⁺-doped and Ba²⁺-doped KNN specimens was suppressed until t_s = 10 h. However, at t_s = 30 h, a heterogeneous microstructure with abnormal grains and small-sized matrix grains was observed. The size and number of abnormal grains and size distribution of matrix grains were considerably different between the Sr²⁺-doped and Ba²⁺-doped specimens. This microstructural diversity in KNN ceramics could be explained in terms of the crystal growth driving force required for two-dimensional nucleation, which was directly related to the number of vacancies in the material.

• Journal of Electrochemical Science and Technology
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• 제14권2호
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• pp.105-119
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• 2023

The electrochemical chlorine evolution reaction (CER) is an important electrochemical reaction and has been widely used in chlor-alkali electrolysis, on-site generation of ClO^-, and Cl₂-mediated electrosynthesis. Although precious metal-based mixed metal oxides (MMOs) have been used as CER catalysts for more than half a century, they intrinsically suffer from a selectivity problem between the CER and parasitic oxygen evolution reaction (OER). Hence, the design of selective CER electrocatalysts is critically important. In this review, we provide an overview of the fundamental issues related to the electrocatalysis of the CER and design strategies for selective CER electrocatalysts. We present experimental and theoretical methods for assessing the active sites of MMO catalysts and the origin of the scaling relationship between the CER and the OER. We discuss kinetic analysis methods to understand the kinetics and mechanisms of CER. Next, we summarize the design strategies for new CER electrocatalysts that can enhance the reactivity of MMO-based catalysts and overcome their scaling relationship, which include the doping of MMO catalysts with foreign metals and the development of non-precious metal-based catalysts and atomically dispersed metal catalysts.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.111-115
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• 1997

Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 춘계총회 및 학술발표회
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• pp.46-46
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• 2000

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.41-44
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• 2001

In this paper, we explain briefly polysilicon guard layer in a simple 3-D structure. Simulation was performed extensively to see interference and characterize the role of the polysilicon guard layer. Especially, we performed extensively S-parameter simulation to analysis the signal interference. The interference was characterized in terms of oxide thickness, polysilicon doping concentration, thickness, number of contact of polysilicon guard, and metal guard size.