• Applied Science and Convergence Technology
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• v.26 no.1
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• pp.16-19
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• 2017

A thin metal layer of molybdenum is placed between the conventional barrier layer and the stainless steel substrate for investigating the diffusion property of iron (Fe) atoms. In this study, the protection probability was confirmed by measuring the concentration of out-diffused Fe using a SIMS depth profile. The Fe concentration of chromium (Cr) barrier layer with 10 nm molybdenum (Mo) layer is 5 times lower than that of Cr barrier without the thin Mo layer. The insertion of a thin Mo metal layer between the barrier layer and the stainless steel substrate effectively protects the out-diffusion of Fe atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Nuclear Engineering and Technology
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• v.47 no.5
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• pp.588-595
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• 2015

This study presents an effective method for additional recovery of residual actinides in liquid electrodes after the electrowinning process of pyroprocessing. The major distinctive feature of this method is a reactor with multiple reaction cells separated by partition walls in order to improve the recovery yield, thereby using the interelement difference in diffusion coefficients within the liquid electrode and controlling the selectivity and purity of element recovery. Through an example of numerical simulation of the diffusion scenarios of individual elements, we verified that the proposed method could effectively separate the actinides (U and Pu) and rare-earth elements contained in liquid cadmium. We performed a five-step consecutive recovery process using a simplified conceptual reaction cell and recovered 58% of the initial amount of actinides (U + Pu) in high purity (${\geq}99%$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.47-59
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• 1993

The thermal stability of "stuffed" TiN/Ti barrier matals with different annealing history has been studied to improve the contact reliability of Al/Si contacts in 16M DRAM. The annealing conditions before the Al deposition such as film thickness, the annealing temperature and the annealing ambient have been varied. For TiN(900A)/Ti(300A) annealed at 450 in nitrogen ambient to form a "stuffed barrier" by inducing oxygen atoms into grain boundaries, there is no observation of Al penetrations into Si substrates after the post heat treatment of up to 700 even though there are massive amounts of Al found in TiN film after the post heat treatment of 600 indicating that TiN has a "sponge-like" function due to its ability to absorb several amounts of aluminum at elevated temperature. The TiN/Ti diffusion barrier annealed at 550 has, however, failed after the post heat treatment at 600. The thinner diffusion barriers with TiN(300A)/Ti(100A) failed after the post heat treatment at 600.he post heat treatment at 600.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.5
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• pp.812-817
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• 2013

This study demonstrates the diffusion bonding process between a tungsten carbide shank (K30) and tungsten carbide (DX5) for micro WC-PCD tool fabrication. A type of nickel alloy was used as the filler met alto improve the bond ability between K30 and DX5. The bonding pressure, time, and surrounding conditions were kept constant. In particular, the normal pressure was controlled precisely under buckling analysis. Diffusion bonding was performed at various operation temperatures (1170-1770 K) by using a specially designed jig. The microstructure on the localized bonded surface was analyzed using scanning electron microscopy and optical microscopy. In the case of diffusion bonding of WCat 1370-1770K, the filler metal melted completely and diffused between the two base metals, and they were bonded more tightly on both sides than at temperatures below 1370 K. Our results demonstrated the importance of sensitive temperature dependence of diffusion bonding.

• Journal of Welding and Joining
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• v.9 no.4
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• pp.28-39
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• 1991

The change of microstructure in the bonded interlayer and mechanical properties of the joints were investigated during Transient Liquid Phase Diffusion Bonding(TLP bonding) of STS304/SM17C and STS304/SM45C couples using Ni base amorphous alloys added boron and prepared alloy as insert metal. Main experimental results obtained in this study are as follows: 1) Isothermal solidification process was completed much faster than theoretically expected time, 14ks at 1473K temperature. Its completion times were 3.6ks at 1423K, 2.5ks at 1473K and 1.6ks at 1523K respectively. 2) As the concentration of boron in the insert metal increased, the more borides were precipitated near bonded interlayer and grain boundary of STS304 side during isothermal solidification process, its products were $M_{23}P(C,B)_6}_3)$ The formation of grain boundary during isothermal solidification process was completed at structural carbon steel after starting the solidfication at STS304 stainless steel. 4) The highest value of hardness was obtained at bonded interface of STS304 side. The desirable tensile properties were obtained from STS304/SM17C, STS304/SM45C using MBF50 and experimentally prepared insert metal with low boron concentration.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.97-102
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• 1998

Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.1
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• pp.77-82
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• 2011

In this study, a metal-supported SOFC was fabricated using a relatively cheap and simple process. The adhesion process between ceramic cell and metal support was performed in high temperature over $1400^{\circ}C$ and the deformation of large metal-supported cell happened in this process. Using bi-layered metal support fabricated by diffusion bonding, the deformation of the metal-supported cell can be minimized and the sealing efficiency of anode and cathode was improved. The flatness of the cell was improved by over 20% and the maximum power density of over 0.5 $Wcm^{-2}$ was obtained at the operation condition of $800^{\circ}C$.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.87-89
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• 2004

Brazing is an indispensable manufacturing technology for liquid rocket engine. In this study, for LRE injector, stainless steel 316L was used of base metal and Ni based MBF-20 of insert metal. The brazing and diffusion was carried out under various conditions. There are solid phase and. residual liquid phase in the brazed joint. With increment of holding time, the amount of solid phase increased and the elements of base metal and insert metal compositionally graded. Boron diffused from insert metal came into base metal and made boride with Cr and Mo at the brazed joint of base metal and insert metal.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.325-333
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• 2001

The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.