• International Journal of Korean Welding Society
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• v.2 no.1
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• pp.21-24
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• 2002

The main purpose of this study was to investigate the formation mechanisms of imperfections such as irregular humps, outer cavity and inner cavity in the laser fusion zone of diamond saw blade. Laser beam welding was conducted to join two parts of blade; mild steel shank and Fe-Co-Ni sintered tip. The variables were beam power and travel speed. The microstructure and elements distributions of specimens were analyzed with SEM, AES, EPMA and so on. It was found that these imperfections were responded to heat input. Irregular humps were reduced in 10.4∼l7.6kJ/m heat input range. However there were no clear evidences, which could explain the relations between humps formation and heat input. The number of outer cavity and inner cavity decreased as heat input was increased. Considering both possible defects formations mechanisms, it could be thought that outer cavity was caused by insufficient refill of keyhole, which was from rapid solidification of molten metal and fast molten metal flow to the rear keyhole wall at low heat input. More inner cavities were found near the interface of the fusion zone and sintered segment and in the bottom of the fusion zone. Inner cavity was mainly formed in the upper fusion zone at high heat input whereas was in the bottom at low heat input. Inner cavity was from trapping of coarsened preexist pores in the sintered tip and metal vapor due to rapid solidification of molten metal before the bubbles escaped.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.10a
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• pp.292-300
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• 2001

The paper describes spectroscopic characteristics of plasma induces in the pulsed YAG laser welding of alloys containing a large amount of volatile elements. The authors have conducted the spectroscopic analyses of laser induced Al-Mg alloys plasma in the air and argon atmosphere. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg lines, as well as the intense molecular spectra of A10 and Mg0 formed by chemical reactions of evaporated Al and Mg atoms from the pool surface with oxygen in the air. In argon atmosphere, Mg0 and AI0 spectra vanished, but AIH spectrum was detected. The hydrogen source was presumably hydrogen dissolved in the base metals, water absorbed on the surface oxide layer, or $H_2$ and $H_2O$ in the shielding gas. The resonant 1ines of Al and Mg were strongly self-absorbed, in particular, self-absorption of the Mg 1ine was predominant. These results show that the laser induced plasma was made of metal1ic vapor with relatively low temperature and high density.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.327-330
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• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.370-376
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• 2005

Magnesium alloys are becoming important material for light weight car body, due to their low specific density but high specific strength. However they have a poor weldability, caused high oxidization tendency and low vapor temperature. In this study, the welding performance of magnesium alloys was investigated for automobile application. The materials were rolled magnesium alloy sheet contains Al and Zn such as AZ3l , AZ6l and AZ9l. Three types of welding process were studied, that were GTAW, Laser beam welding and FSW. To evaluate the weldability, we examined the appearance of welding bead. Also we checked bead shape and internal defects such as crack and porosity on cross section of welding bead. The mechanical property was measured for welded specimen by tensile test. For determination of the strength change by welding process, the hardness profile across the welding center was measured. For the results, the tensile properties of welded specimen were decreased obviously on all welding process. For the fusion welding process such as GTAW and laser beam welding, the surface of the welding bead was covered with oxidized magnesium dust but it was removed by simple cleaning work as wipe-out with tissue. Also under cut, that caused vaporization of base metal was occurred. for the friction stir welding, there was no oxidation, under-cut or internal defects. However it had poor weld performance, the reason was cleavage fracture occurred at plastic deformation zone. For welding of magnesium alloy, the laser beam welding process was recommended.

• Journal of Welding and Joining
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• v.34 no.4
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• pp.55-61
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• 2016

During laser overlap welding of galvanized steel sheets, explosion of weld pool by the high pressure zinc vapor induces weld defects like porosity and blowhole. In this study, laser 2-pass welding was implemented to prevent the weld defects. Through the 1st pass welding, zinc layers on the faying surfaces were removed when proper heat input was applied. Excessive heat input could result in explosion even during the 1st pass welding and insufficient heat input could not remove enough region of zinc layer for the 2nd pass welding. Coating weights of $45g/m^2$ and $60g/m^2$ were considered and for both cases sound welds without weld defects could be achieved. In spite of 2-pass welding, softening of weld and heat affected zone was not observed and Zn coating was not diluted into the weld metal.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.