• 제목/요약/키워드: Metal Oxide

검색결과 2,705건 처리시간 0.032초

제련소 주변 오염토양의 중금속 안정화를 위한 다양한 안정화제의 적용성 연구 (Applicability Test of Various Stabilizers for Heavy Metals Contaminated Soil from Smelter Area)

  • 전종원;배범한;김영훈
    • 한국지반환경공학회 논문집
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    • 제11권11호
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    • pp.63-75
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    • 2010
  • 중금속으로 오염된 부지는 다양한 공법으로 복원이 가능하나 오염부지가 비교적 넓은 경우 중금속을 부지로부터 제거하는 적극적 공법은 기술적 어려움과 비용의 문제로 쉽게 사용할 수 없다. 그러므로 토양에서 중금속의 용출을 차단 및 지연하는 안정화 공법이 보다 현실적이라 할 수 있다. 본 연구에서는 국내의 비교적 큰 규모의 중금속 오염토양인 제련소 오염토양을 대상으로 magnetite, hematite, zeolite-A, zeolite-X, zeolite-Y, zinc oxide, calcium oxide, carbon trioxide, manganese oxide, manganese dioxide, fish bone, sodium phosphate 등의 다양한 안정화제의 적용성실험을 수행하였다. 비소, 납, 구리, 니켈, 아연 등의 다중 중금속으로 오염된 토양의 경우 1종의 안정화제로 안정화가 어려우며 기존 연구에서 보고된 특정 중금속의 안정화에 우수한 성능을 갖는 안정화제의 경우에도 다른 중금속의 안정화에 기여하지 못하거나 용출을 촉진하는 경향을 보였다. 시간이 경과함에 따라 안정화 효율이 증가하였다. 니켈과 납의 경우 calcium oxide, carbon trioxide, manganese oxide 등의 안정화제가 효과가 있으며 특히 연속추출에서 물에 의한 추출부분에서 안정화 효율이 높았다. 구리의 경우 manganese oxide, zeolite 등이 효과가 크며 연속추출에서 exchangeable 추출부분에서 안정화 효율이 높았다. 비소의 경우 magnetite에 의한 안정화 효과를 보이며 대부분의 metal oxide와 phosphate 에 의해 용출이 촉진되는 부작용을 보였다. 그러므로 다양한 중금속으로 오염된 토양의 경우 2종 이상의 안정화제를 사용하여야 하며 역효과를 일으키는 안정화제의 사용을 배제하고 중금속의 농도에 따라 사용량 및 안정화 기간을 달리하여야 할 것으로 판단된다.

Metal Antenna 효과로 인한 게이트 산화막에서 정공 포획에 관한 연구 (Study of the Hole Trapping in the Gate Oxide Due to the Metal Antenna Effect)

  • 김병일;신봉조박근형이형규
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.549-552
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    • 1998
  • Recently, the gate oxide damage induced by the plasma processes has been one of the most significant reliability issues as the gate oxide thickness falls below 10 nm. The process-induced damage was studied with the metal antenna test structures. In addition to the electron trapping, the hole trapping in a 10 nm thick gate oxide due to the plasma-induced charging was observed in the NMOS's with a metal antenna. The hole trapping gave rise to the decrease of the transconductance (gm) similarly to the case of the electron trapping, but to the extent much less than the electron trapping. It would be because the electrical stress that the plasma-induced charging forced to the gate oxide for the devices with the hole trapping was much smaller than for those with the electron trapping. This hypothesis was strongly supported by the measured characteristics of the Fowler-Nordheim current in the gate oxide.

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금속산화물을 이용한 이산화황과 산화질소의 동시재거( II ) -금속산화물과 이산화황의 반응- (Simultaneous Removal of SO$_2$ and NO by Using Metal Oxide( II ) -Oxidative Sorption of SO$_2$ by Metal Oxide-)

  • 신창섭
    • 한국안전학회지
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    • 제6권4호
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    • pp.26-33
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    • 1991
  • To remove SO$_2$ from flus gas, cupric oxide, manganese oxide and iron oxide were studied with varying loading value. The experiment was carried out in a flow reactor and the reactants were prepared by impregnation method using alumina. The reaction temperature was varied from 30$0^{\circ}C$ to 45$0^{\circ}C$. Experimental results showed that all of these metal oxides were effective on SO$_2$ removal reaction and cupric oxide was the best reactant. The sample with 10wt% loading value was better reactant than with 20wt% because in case of 20wt% loading, metal dispersion on the alumina surface was not uniform. And the SO$_2$ removal efficiency was increased with the reaction temperature.

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Vanadium Oxide 나노구조 형성 (Anodic Growth of Vanadium Oxide Nanostructures)

  • 이현권;이기영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.68-68
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    • 2018
  • Nanoporous or nanotubular metal oxide can be fabricated by anodization of metal substrate in fluoride contained electrolytes. The approach allows various transition metals such as Zr, Hf, Nb, Ta to form highly ordered oxide nanostructures. These oxide nanostructures have various advantages such as high surface area, fast electron transport rate and slow recombination in semiconductive materials. Recently, vanadium oxide nanostructures have been drawn attentions due to their superior electronic, catalytic and ion insertion properties. However, anodization of vanadium metal to form oxide layers is relatively difficult due to ease formation of highly soluble complex in water contained electrolyte during anodization. Yang et al. reported $[TiF_6]^{2-}$ or $[BF_4]^-$ in electrolyte helps to formation of stable oxide layer [1, 2]. However, the reported approaches are very sensitive in other parameters. In this presentation, we deal with the other important key parameters to form ordered anodic vanadium oxide such as pH, temperatures and applied potential.

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Formation of iron oxides from acid mine drainage and magnetic separation of the heavy metals adsorbed iron oxides

  • Kwon, Hee-won;Kim, JeongJin;Ha, Dong-Woo;Kim, Young-Hun
    • 한국초전도ㆍ저온공학회논문지
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    • 제18권1호
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    • pp.28-32
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    • 2016
  • There are a few thousand abandoned metal mines in South Korea. The abandoned mines cause several environmental problems including releasing acid mine drainage (AMD), which contain a very high acidity and heavy metal ions such as Fe, Cu, Cd, Pb, and As. Iron oxides can be formed from the AMD by increasing the solution pH and inducing precipitation. Current study focused on the formation of iron oxide in an AMD and used the oxide for adsorption of heavy metals. The heavy metal adsorbed iron oxide was separated with a superconducting magnet. The duration of iron oxide formation affected on the type of mineral and the degree of magnetization. The removal rate of heavy metal by the adsorption process with the formed iron oxide was highly dependent on the type of iron oxide and the solution pH. A high gradient magnetic separation (HGMS) system successfully separated the iron oxide and harmful heavy metals.

Functional Designs of Metal oxide for Transparent Electronics

  • Kim, Joondong;Patel, Malkeshkumar;Kim, Hong-Sik;Kim, Hyunki;Yadav, Pankaj;Park, Wanghee;Ban, Dongkyun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.387.1-387.1
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    • 2016
  • Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.

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Effect of silica coating on bond strength between a gold alloy and metal bracket bonded with chemically cured resin

  • Ryu, Min-Ju;Gang, Sung-Nam;Lim, Sung-Hoon
    • 대한치과교정학회지
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    • 제44권3호
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    • pp.105-112
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    • 2014
  • Objective: The purpose of this study was to evaluate the effects of three different surface conditioning methods on the shear bond strength (SBS) of metal brackets bonded directly to gold alloy with chemically cured resin. Methods: Two hundred ten type III gold alloy specimens were randomly divided into six groups according to the combination of three different surface conditioning methods (aluminum oxide sandblasting only, application of a metal primer after aluminum oxide sandblasting, silica coating and silanation) and thermocycling (with thermocycling, without thermocycling). After performing surface conditioning of specimens in accordance with each experimental condition, metal brackets were bonded to all specimens using a chemically cured resin. The SBS was measured at the moment of bracket debonding, and the resin remnants on the specimen surface were evaluated using the adhesive remnant index. Results: Application of metal primer after aluminum oxide sandblasting yielded a higher bond strength than that with aluminum oxide sandblasting alone (p < 0.001), and silica coating and silanation yielded a higher bond strength than that with metal primer after aluminum oxide sandblasting (p < 0.001). There was no significant change in SBS after thermocycling in all groups. Conclusions: With silica coating and silanation, clinically satisfactory bond strength can be attained when metal brackets are directly bonded to gold alloys using a chemically cured resin.

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.13-15
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    • 2017
  • Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

초임계수를 이용한 금속산화물 미세입자 제조 (Production of Fine Metal Oxide Particles in Supercritical Water)

  • 이주헌;박영우
    • 공업화학
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    • 제10권1호
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    • pp.173-176
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    • 1999
  • 초임계수를 이용한 금속산화물의 미세입자 제조에 대하여 연구하였다. 금속염 수용액으로는 cobalt nitrate solution과 manganese nitrate solution을 sample solution으로 선택하여 코발트산화물과 망간산화물 입자를 제조하였다. 얻어진 결과로부터 초임계수를 이용한 금속산화물 미세입자의 제조가 가능함을 확인할 수 있었으며, 초임계수 하에서는 매우 빠른 dehydration반응이 일어남을 관찰할 수 있었다. 짧은 반응시간(30~100 초)에도 불구하고 미세입자 ($0.5{\sim}2{\mu}m$)가 생성되었으며, 초임계수 공정에서는 mixer의 온도가 입자의 크기 및 분포에 큰 영향을 미침을 알 수 있었다. 반응온도 조절을 통하여 입자의 크기를 제어할 수 있음을 확인할 수 있었다.

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Design of a Smart Gas Sensor System for Room Air-Cleaner of Automobile (Thick-Film Metal Oxide Semiconductor Gas Sensor)

  • Kim, Jung-Yoon;Shin, Tae-Zi;Yang, Myung-Kook
    • Journal of Electrical Engineering and Technology
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    • 제2권3호
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    • pp.408-412
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    • 2007
  • It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.