• Title/Summary/Keyword: Metal Oxide

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Characteristics of 32 × 32 Photonic Quantum Ring Laser Array for Convergence Display Technology (디스플레이 융합 기술 개발을 위한 32 × 32 광양자테 레이저 어레이의 특성)

  • Lee, Jongpil;Kim, Moojin
    • Journal of the Korea Convergence Society
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    • v.8 no.5
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    • pp.161-167
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    • 2017
  • We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

Surface Chemical Aspects of Coagulation, Deposition, and Filtration Processes: Variation of Electrokinetic Potential at Metal Oxide-Water and Organic-Water Interfaces in the $Na^+$ and $Ca^{2+}$ Ion Solutions

  • Kim, Sung-Jae
    • Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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    • v.4 no.3
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    • pp.173-183
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    • 2000
  • This study measured the zeta potential of both latex colloidal particles with carboxylate surface groups and glass beads (collectors) with silanol surface group employing various solution with different chemical characteristics. The results have been compared with the surface chemistry theory. The zeta potential of the particle and collector increased with increasing pH up to 5.0 regardless of the solution chemistry. For a monovalent electrolyte solution(sodium chloride solution) the zeta potential steadily increased until the pH reached 9.5. In contrast, little change in zeta potential was made between 5.0 and 9.5 for a divalent electrolyte solution (sodium chloride solution) the zeta potential steadily increased until the pH reached 9.5. In contrast, little change in zeta potential was made between 5.0 and 9.5 for a divalent electrolyte solution (calcium chloride solution). In other words, the more the pH decreases, the larger the effect of neutral salts, such as NaCl and CaCl$_2$, have on the ζ-potential values. In this study, the PZPC(point of zero proton condition) of the particle and collector occurred below a pH of 3.1, H(sup)+ and OH(sup)- acted as a PDI (potential determining ion), and Na(sup)+ acted as an IDI(indifferent ion). The magnitude of the negative ζ-potential values of the particle and collector monotonically increased as the concentrations of Na(sup)+ or Ca(sup)2+([Na(sup)+] or [Ca(sup)2+]) decreased (the values of pNa or pCa increased). In the case of latex particles, the ζ-potential should aproach zero (isoelectric point; IEP) asymptotically as the pNa approaches zero, while in the case of calcium chloride electrolyte, ζ-potential reversal may be expected to occur around 3.16$\times$10(sup)-2MCaCl$_2$(pCa=1.5). pH, valance and ionic strength can be used in various ways to improve the water treatment efficiency by modifying the charge characteristics of the particle and collector. Predictive capability is far less certain when EDL(electrical double layer) repulsive forces exist between the particle and collector.

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Investigating the Au-Cu thick layers Electrodeposition Rate with Pulsed Current by Optimization of the Operation Condition

  • Babaei, Hamid;Khosravi, Morteza;Sovizi, Mohamad Reza;Khorramie, Saeid Abedini
    • Journal of Electrochemical Science and Technology
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    • v.11 no.2
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    • pp.172-179
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    • 2020
  • The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L-1 Au, 55gr·L-1 Cu, 24 gr·L-1 KCN and 1 ml·L-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm-2 average current density and 30% duty cycle, had 0.841 ㎛·min-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

Characteristics of Lead Anodic Films Formed in Aqueous Solutions and Reactivities of Di-iso-butylnitrosoamine in Sea Water (납 산화피막 전극의 특성과 디이소부틸니트로소아민의 전극반응성)

  • Hwang Kum-Sho
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.14 no.2
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    • pp.103-115
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    • 1981
  • The cathodic reactions of lead anodic films formed in phosphoric acid, oxalic acid and sodium hydroxide solutions and the reactivities of Di-iso-butylnitrosoamine (DBNA) in sea water at $15\sim30^{\circ}C$ were studied by means of constant current-potential method. Besides, various contants and thermodynamic quantities obtained in the experiment were also do-scribed to explain the reactivities of protons that entered in the anodic film by being transferred across the metal-oxide interface. The electrode reactions of lead anodic film formed in sodium hydroxide solution in 60mM DBNA+0.5M NaCl did not occur because of complete insulator formed on anodic film. The values of $(\partial\triangle E_{H^+}/\partial T)_{i=const}$, estimated with Bead anodic films formed in phosphoric acid in 60mM DBNA+0.5M NaCl and 60mM $DBNA+6\%_{\circ}$ sea water were $-0.006\;V/^{\circ}C\;and\;-0.005\;V/^{\circ}C$, thus being nearly coincided, but the values of $(\partial E_o/\partial T)_{i=o}$ were $0.002\;V/^{\circ}C\;and\;-0.002\;V/^{\circ}C$, being completely inversed.

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A Study of Photoelectrolysis of Water by Use of Titanium Oxide Films (산화티타늄 피막의 광 전기분해 특성에 관한 연구)

  • Park, Seong-Young;Cho, Byung-Won;Ju, Jeh-Beck;Yun, Kyung-Suk;Lee, Eung-Cho
    • Applied Chemistry for Engineering
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    • v.3 no.1
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    • pp.88-99
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    • 1992
  • For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

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A Quality-control Experiment Involving an Optical Televiewer Using a Fractured Borehole Model (균열모형시추공을 이용한 광학영상화검층 품질관리 시험)

  • Jeong, Seungho;Shin, Jehyun;Hwang, Seho;Kim, Ji-Soo
    • The Journal of Engineering Geology
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    • v.30 no.1
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    • pp.17-30
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    • 2020
  • An optical televiewer is a geophysical logging device that produces continuous high-resolution full-azimuth images of a borehole wall using a light-emitting-diode and a complementary metal-oxide semiconductor image sensor to provide valuable information on subsurface discontinuities. Recently, borehole imaging logging has been applied in many fields, including ground subsidence monitoring, rock mass integrity evaluation, stress-induced fracture detection, and glacial annual-layer measurements in polar regions. Widely used commercial borehole imaging logging systems typically have limitations depending on equipment specifications, meaning that it is necessary to clearly verify the scope of applications while maintaining appropriate quality control for various borehole conditions. However, it is difficult to directly check the accuracy, implementation, and reliability for outcomes, as images derived from an optical televiewer constitute in situ data. In this study, we designed and constructed a modular fractured borehole model having similar conditions to a borehole environment to report unprecedented results regarding reliable data acquisition and processing. We investigate sonde magnetometer accuracy, color realization, and fracture resolution, and suggest data processing methods to obtain accurate aperture measurements. The experiment involving the fractured borehole model should enhance not only measurement quality but also interpretations of high-resolution and reliable optical imaging logs.

Trace metals in Chun-su Bay sediments (천수만 퇴적물에서 미량금속의 지화학적 특성)

  • Song, Yun-Ho;Choi, Man-Sik;Ahn, Yun-Woo
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.16 no.4
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    • pp.169-179
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    • 2011
  • To investigate the controlling factor and accumulation of trace metal concentrations in Chun-su Bay sediments, grain-size, specific surface area, organic carbon content, calcium carbonate content, and concentration of Al, Fe, Na, K, Mg, Ca, Ti, Mn, P, S, Ba, Sr, Li, Co, Cr, Ni, Cu, Zn, As, Cd, Cs, Sc, V, Sn were analyzed. Controlling factors of metals were quartz-dilution, calcium carbonate and coarse sand or K-feldspar. Although the distribution of V, Co, Cr, Ni, Cu, Zn, Sn, and Cd concentration was explained by grain-size effiect, Mn and As showed the similar importance of grain-size effect and coarse sand or K-feldspar factors. By virtue of enrichment factor and 1 M HCl experiment, there were little enrichment in all the trace metals in bay sediments, which were explained well by geochemical properties of sediments. Since the concentration levels of As in coarse sand were high as much as those in fine-grained sediments and it was combined with Mn oxide (1 M HCl leached) and K-feldspar (residual), it was suggested that when the enrichment of As in sediments would be assessed, it is necessary to separate the coarse sand from bulk sediments or to use only sediments with higher than 10% in < $16{\mu}m$ fraction.

Dependency of Phonon-limited Electron Mobility on Si Thickness in Strained SGOI (Silicon Germanium on Insulator) n-MOSFET (Strained SGOI n-MOSFET에서의 phonon-limited전자이동도의 Si두께 의존성)

  • Shim Tae-Hun;Park Jea-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.9 s.339
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    • pp.9-18
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    • 2005
  • To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

A Study on the Characteristics of Smartphone Camera as a Medical Radiation Detector (의료 방사선 검출기로써 스마트폰 카메라의 특성에 관한 연구)

  • Kang, Han Gyu;Kim, Ho Chul
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.143-151
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    • 2016
  • The aim of this study is to investigate the optimal algorithm to extract medical radiation induced pixel signal from complementary metal-oxide semiconductor (CMOS) sensors of smartphones camera. The pixel intensity and pixel number of smartphone camera were measured as the X-ray dose was increased. The front camera of the smartphone camera has low noise property and excellent dose response as compared to the back camera of the smartphone. The indirect method which uses scintillation crystal in front of the smartphone camera, couldn't improve the X-ray detection efficiency as compared to the direct method which does not use any scintillator in front of the smartphone camera. When we used the algorithm which employing threshold level on the pixel intensity and pixel number, the dose linearity was more higher for the pixel intensity rather for the pixel number. The use of pixel intensity of Y color component which represents the grey scale, would be efficient in terms of the radiation detection efficiency and reducing the complexity of the image processing. We expect that the radiation dose monitoring can be managed effectively and systematically by using the proposed radiation detection algorithm, thus eventually will contribute to the public healthcare.

Combined Removal of n-heptane and CO using Plasma-catalytic Process (플라즈마/촉매 공정을 이용한 n-헵테인과 일산화탄소 동시제거)

  • Lee, Sang Baek;Jo, Jin Oh;Mok, Young Sun
    • Journal of the Korean Institute of Gas
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    • v.20 no.2
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    • pp.1-9
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    • 2016
  • Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.