• Title/Summary/Keyword: Metal Oxide

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A Study on EPMA on Ni-Cr Alloy by Nb content for Porcelain Fused to Metal Crown (Nb이 첨가된 금속소부도재관용 Ni-Cr 합금 표면의 EPMA 관찰)

  • Kim, Chi-Young;Choi, Sung-Min;Cho, Hyeon-Seol
    • Journal of Technologic Dentistry
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    • v.28 no.1
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    • pp.19-26
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    • 2006
  • The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens of Ni-Cr alloy, which is 0.8mm in thickness, within the porcelain furnace of 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. Oxide film was observed form of the fired specimens with scanning electron microscope (SEM), and at the same time it measured Electron Probe Micro Analyzer (EPMA). The result of this study were as follows: 1. Cr oxide film and Nb oxide film were observed from the surface of specimen to be controlled at a rate of Nb 1%. 2. Nb oxide film was observed from the interface of specimens to be controlled at a rate of Nb 1% and 3%. 3. The stability of oxide films that treated in air were more stable than treated under vacuum.

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Enhanced Adhesion of Cu Film on the Aluminum Oxide by Applying an Ion-beam-mixd Al Seed Layar

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.229-229
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    • 2012
  • Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

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Implementation of LED BLU Using Metal core PCB with Anodizing Oxide Layer and Reflection Cup Structure (에노다이징 절연층과 반사컵 구조를 보유한 COB타입 LED BLU 광원구현)

  • Cho, Jae-Hyun;Lee, Min-Soo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.8
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    • pp.8-13
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    • 2009
  • LED BLU(Back Light Unit), based on MCPCB(Metal Core Printed Circuit Board) with anodizing oxide dielectric layer and improved thermal dissipation property, are presented. Reflecting cups were also formed on the surface of the MCPCB such that optical coupling between neighboring chips were minimized for improving the photon extraction efficiency. LED chips were directly attached on the MCPCB by using the COB (Chip On Board) scheme.

Contruction and Performance Evaluation of the Surge Arrester for Transmission Class (송전급 피뢰기의 구조와 성능평가)

  • Kim, S.S.;Choi, I.S.;Cho, H.G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.890-893
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    • 2002
  • Since 1970s, varistors using metal-oxide resistors have been applied to Gapless surge arresters for power system. In the paper, the structure of metal-oxide surge arresters without gaps for 362kV GIS which is developed the first in korea has been introduced. And the main evaluation items for the metal-oxide resistors which are reference voltage test, residual voltage test, long duration current impulse withstand test and operating duty test is tested and evaluated.

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Preparation of nano composite metal-oxide electrode and its application for superrcapacitor (나노복합산화물 전극의 제조 및 수퍼커패시터로써의 응용)

  • Kim, Hong-Il;Lee, Ju-Won;Kim, Sang-Gil;Yuk, Gyung-Chang;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.801-804
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    • 2002
  • Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. Both of amorphous cobalt oxide and manganese dioxide were prepared by sol-gel process reported in our previous work. Nanostructured supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) coated metal oxides were successfully prepared by electrochemical oxidation from an acidic non-aqueous medium. We established process parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured metal oxide electrodes using controlled solution chemistry. $CoO_2$ and $MnO_2$-based composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

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Use of High-Temperature Gas-Tight Electrochemical

  • Park, Jong-Hee;Beihai Ma;Park, Eun-Tae
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.103-113
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    • 1998
  • By using a gas-tight electrochemical cell, we can perform high-temperature coulometric titration and measure electronic transport properties to determine the elecronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilitized zirconia(YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressure ($pO_2=10^{-35}$ to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria $(Ca-CeO_2 \;and\; CeO_2)$, copper oxides and copper-oxide-based ceramic superconductors, transition metal oxides, $SrFeCo_{0.5}O_x,\; and \;BaTiO_2$.

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Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

  • Kang, Chae-Dong;Shin, Kye-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.4
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    • pp.178-181
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    • 2010
  • An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

Graphene field-effect transistor for radio-frequency applications : review

  • Moon, Jeong-Sun
    • Carbon letters
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    • v.13 no.1
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    • pp.17-22
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    • 2012
  • Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

Semiconductor-Type MEMS Gas Sensor for Real-Time Environmental Monitoring Applications

  • Moon, Seung Eon;Choi, Nak-Jin;Lee, Hyung-Kun;Lee, Jaewoo;Yang, Woo Seok
    • ETRI Journal
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    • v.35 no.4
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    • pp.617-624
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    • 2013
  • Low power consuming and highly responsive semiconductor-type microelectromechanical systems (MEMS) gas sensors are fabricated for real-time environmental monitoring applications. This subsystem is developed using a gas sensor module, a Bluetooth module, and a personal digital assistant (PDA) phone. The gas sensor module consists of a $NO_2$ or CO gas sensor and signal processing chips. The MEMS gas sensor is composed of a microheater, a sensing electrode, and sensing material. Metal oxide nanopowder is drop-coated onto a substrate using a microheater and integrated into the gas sensor module. The change in resistance of the metal oxide nanopowder from exposure to oxidizing or deoxidizing gases is utilized as the principle mechanism of this gas sensor operation. The variation detected in the gas sensor module is transferred to the PDA phone by way of the Bluetooth module.

The Influence of CuO on Bonding Behaviors of Low-Firing-Substrate and Cu Conductor (저온소성 기판과 Cu와의 동시소성에 미치는 CuO의 첨가효과)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.31 no.4
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    • pp.381-388
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    • 1994
  • A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

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