• 제목/요약/키워드: Metal Ion

검색결과 2,183건 처리시간 0.027초

Solid State Cesium Ion Beam Sputter Deposition

  • Baik, Hong-Koo
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.5-18
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    • 1996
  • The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

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Apatite를 이용한 중금속 제거 (The Removal of Heavy Metals in Aqueous Solution by Hydroxyapatite)

  • 강전택;정기호
    • 한국환경과학회지
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    • 제9권4호
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    • pp.325-330
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    • 2000
  • The hydroxyapatite (HAp) for the present study was prepared by precipitation method in semiconductor fabrication and the crystallized at ambient to 95$0^{\circ}C$ for 30min in electric furnace. The ion-exchange characteristics of HAp for various heavy metal ions such as $Cd^{2+}, Cu^{2+}, Mn^{2+}, Zn^{2+}, Fe^{2+}, Pb^{2+}, Al^{3+}, and Cr^{6+}$ in aqueous solution has been investigated. The removal ratio of various metal ions for HAp were investigated with regard to reaction time, concentration of standard solution, amount of HAp and pH of solution. The order of the ions exchanged amount was as follws: $Pb^{2+}, Fe^{3+}>Cu^{2+}>Zn^{2+}>Al^{3+}>Cd^{2+}>Mn^{2+}>Cr^{6+}. The Pb^{2+}$ ion was readily removed by the Hap, even in the strongly acidic region. The maximum amount of the ion-exchange equilibrium for $Pb^{2+}$ ion was about 45 mg/gram of HAp. The HAp would seem to be possible agent for the removal of heavy metal ions in waste water by recycling of waste sludge in semiconductor fabrication.

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폐종이컵을 이용한 이온교환체 제조와 중금속제거특성 (Preparation of ion exchanger from waste paper cup and removal characteristics of heavy metal)

  • 유수용;이훈용;정원진;문명준;이민규
    • 한국환경과학회지
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    • 제11권9호
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    • pp.993-999
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    • 2002
  • Waste paper cup was sulfonated to be used as ion exchanger. Removal characteristic of copper and lead ion by prepared ion exchanger was investigated. The sulfonation was conformed by the high intensity band of $SO_3H$ group around 1100~$1160cm^{-1}$. The synthesized ion exchanger had greater removal ability for copper and lead ion than the original waste paper cup. Ion exchange system reached the final equilibrium plateau within 30min. The maximum removal capacities $q_{max}$ were calculated as 9.79mg/g fur copper and 15.95mg/g for lead, respectively. The affinity of lead based on a weight was higher than that of copper. The ion exchange phenomena appeared to follow a typical Freundlich isotherm.

ION질화에 있어 첨가 탄소량이 잔류응력에 미치는 영향 (The added carbon effect on residual stress in ion-nitriding)

  • 김희송;강명순
    • 오토저널
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    • 제4권2호
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    • pp.35-46
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    • 1982
  • This paper deals with residual stress characteristics of ion-nitrided metal which is primarilly concerned with the effects of added carbon content in gas atmosphere. A small optimal amount of carbon content in gas atmosphere increase compound layer thickness, as well as to increase diffusion layer thickness and hardness. The residual stress and deflection of the specimens was measured in various elevated temperature at the surface of ion-nitrided metal and the internal stress distribution was calculated. It is found that compressive residual stress at the compound layer is largest at the compound layer, and decreases as the depth from the surface increases.

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Filtered Plasma Deposition and MEVVA Ion Implantation

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.
    • 한국진공학회지
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    • 제12권S1호
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    • pp.46-48
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    • 2003
  • The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

생물 고분자를 이용한 중금속 제거에 대한 고찰 (Review on Heavy Metal Removal Using Biopolymer)

  • 전충
    • 유기물자원화
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    • 제16권2호
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    • pp.38-46
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    • 2008
  • 미생물의 세포벽을 구성하는 많은 생물고분자들이 금속이온의 흡착과 이온교환에 주된 역할을 한다는 사실이 연구자들에 의하여 보고되어져왔다. 미생물로부터 유도되어지는 생물고분자들은 이온교환수지나 킬레이팅 수지와 같은 합성 고부나들이 상업적인 흡착제로서 널리 사용되고 있지만, 산업적인 적용에서 다양한 금속 이온들을 회수하기 위한 생물 흡착제로서 유용하다. 이 연구에서는 금속을 제거하는데 유용하고 상업적인 생물고분자들이 소개되어질 것이다.

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Adsorption Characteristics of Al (III), Ni (II), Sm (III) Ions on Resin with Styrene Hazardous Material in Reinforcement Water Fire Extinguishing Agent

  • Kim, Joon-Tae
    • 통합자연과학논문집
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    • 제6권3호
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    • pp.151-157
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    • 2013
  • The ion exchange resins were synthesized from 1-aza-18-crown-6 macrocyclic ligand attached to styrene (2th petroleum in 4th class hazardous material) divinylbenzene (DVB) copolymer with crosslinks of 1%, 6%, and 15% by substitution reaction. These synthetic resins were confirmed by chlorine content, elementary analysis, surface area, and IR-spectrum. The object of this study was to seperate the metal ion absorbed in reinforcement water fire extinguishing agent. As the results of the effects of pH, equilibrium arrival time, and crosslink of synthetic resin on metal ion adsorption for resin adsorbent, the metal ions were showed high adsorption at pH 3 or over and adsorption equilibrium of metal ions was about 2 hours. In addition, adsorption selectivity for the resin in water was the order of Al (III) > Ni (II) > Sm (III) ions, adsorbability of the metal ions was in the crosslinks order of 1%, 6%, and 15%.

Influence of Trap Passivation by Hydrogen on the Electrical Properties of Polysilicon-Based MSM Photodetector

  • Lee, Jae-Sung
    • Transactions on Electrical and Electronic Materials
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    • 제18권6호
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    • pp.316-319
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    • 2017
  • A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

흡착법에 의한 금속이온과 유기산간의 착염 생성계수의 측정법 (Determination of the Formation Constants of Metal Complexes with Organic Acids by Adsorption Method)

  • 제원목
    • 대한화학회지
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    • 제15권4호
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    • pp.199-203
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    • 1971
  • The adsorption method for the determination of the formation constants of the metal complexes with organic acids was developed by using membrane filters. The adsorption method involved the measurements of radioactivities of the adsorbed metal on membrane filters and the filtrate solution after the radioactive metal ion were filtered through membrane filters in the presence of organic ions of varying concentration. Comparing the adsorption method with the ion exchange method, it was seen that the adsorption method was simpler and faster than the ion exchange method. As an example of the metal complex with organic acid yttrium citrate complex was chosen, and the formation constant of the complex obtained by the adsorption method showed $K_f=2.0{\times}10^{-4}(l. mole^{-1})$ at a pH of 7. Also the present study revealed that the carrierfree state of yttrium in aqueous solution was present in the completely ionized state.

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연속반응기에서 Agar를 담체로 고정한 조류 Spirulina의 중금속 흡착특성 (Biosorption Characteristics of Heavy Metal in the Continuous Reactor Packed with Agar Immobilized Algae, Spirulina)

  • 신택수;연익준;김재용
    • 환경위생공학
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    • 제13권1호
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    • pp.174-184
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    • 1998
  • Biosorption characteristics were investigated to discuss the use of agar entrapped Spirulina to remove of heavy metal ions from polluted waters. Agar immobilized algae were used as bioadsorbent in continuous reactor for heavy metal ions removal. The process solution contains Pb, Cu, and Cd as single ion and binary ions. In the adsorption of single heavy metal ions by agar immobilized Spirulina, the adsorption reached within 1hr and observed diffusion limitation differed from the free algal cell adsorption. The optimum pH for the adsorption of heavy metals was 4.5 but the influence of pH decreased less than that of free algal cell. Also, the adsorption characteristics of single heavy metal ions with agar immobilized Spirulina fitted the BET isotherm. Both of experiments of free algal cell and agar immobilized algae showed higher removal efficiency in the single ion solutions than binary ions solutions. The experimental results in the packed column with agar immobilized algae were over 90% of removal efficiency for the Pb, Cu, and Cd in single ion solutions.

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