• Computers and Concrete
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• v.21 no.2
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• pp.127-137
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• 2018

In this study, the behavior of the number of anchorage bolts on the glass-fiber reinforced polymer (GFRP) plates adhered to the surfaces of reinforcing concrete (RC) T-beams was investigated analytically. The analytical results were compared to the test results in term of shear strength, and midpoint displacement of the beam. The modelling of the beams was conducted in ABAQUS/CAE finite element software. The Concrete Damaged Plasticity (CDP) model was used for concrete material modeling, and Classical Metal Plasticity (CMP) model was used for reinforcement material modelling. Model-1 was the reference specimen with enough sufficient shear reinforcement, and Model-2 was the reference specimen having low shear reinforcement. Model-3, Model-4 and Model-5 were the specimens with lower shear reinforcement. These models consist of a single variable which was the number of anchorage bolts implemented to the GFRP plates. The anchorage bolts of 2, 3, and 4 were mutually mounted on each GFRP plates through the beam surfaces for Model-3, Model-4, and Model-5, respectively. It was found that Model-1, Model-3, Model-4 and Model-5 provided results approximately equal to the test results. The results show that the shear strength of the beams increased with increasing of anchorage numbers. While close results were obtained for Model-1, Model-3, Model-4 and Model-5, in Model-2, the rate of increase of displacement was higher than the increase of load rate. It was seen, finite element based ABAQUS program is inadequate in the modeling of the reinforced concrete specimens under shear force.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.213-218
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• 2011

The load cell is a force sensor and a transducer that is used to convert a physical force into a electrical signal for weighing equipment. Most conventional load cells are widely used a metal foil strain gauge for sensing element when force being applied spring element in order to converts the deformation to electrical signals. The sensitivity of a load cell is limited by its low gauge factor, hysteresis and creep. But silicon-based sensors perform with higher reliability. This paper presents the basic design and development of the silicon type load cell with an SUS630 diaphragm. The load cell consists of two parts the silicon strain gauge and the SUS630 structure with diaphragm. Structure analysis of load cell was researched by theory to optimize the load cell diaphragm design and to determine the position of peizoresistors on a silicon strain gauge. The piezo-resistors are integrated in the four points of silicon strain gauge processed by ion implantation. The thickness of the silicon strain gauge was polished by CMP under 100 ${\mu}M$. The 10 mm diameter SUS630 diaphragm was designed for loads up to 10 kg with 300 ${\mu}M$ of diaphragm thickness. The load cell was successfully tested, the variation of ${\Delta}$R(%) of four points on the silicon strain gauge is good linearity properties and sensitivity.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.224-232
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• 2000

Aluminum metal process in surface micromachining enables to fabricate Al electrodes or Al structures, which improve electrical characteristics by reducing contact- and line-resistance or makes the whole process to be simple by using oxide as sacrificial layer. However, it is not possible to use conventional sacrificial layer etching process, because HF solution attacks aluminum as well as sacrificial oxide. The mixed solution of BHF and glycerine as an alternative shows the adequate properties to meet with this end. The exact etching properties, however, are sensitively depends on the geometry of the released structure, because the most etching process of sacrificial layer proceeds to the lateral direction in narrow space. Also, the surface roughness of aluminum affects to the etching characteristics. This paper reports experimental results on the effect of microstructure and surface roughness of aluminum to the etching properties. Considering these effects, we propose the optimized etching condition, which can be used practically for the fabrication of aluminum electrodes and microstructures by using standard surface micromachining process without modification or additional process.

• Journal of the Korean Geophysical Society
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• v.1 no.1
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• pp.59-68
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• 1998

Ground penetrating radar (GPR) experiments were performed in a sand tank to study the ability of detection of buried pipes and to characterize the signal of the reflection wave. The ratios of diameter of buried pipes to the depth were set 4 up to 24 % and materials were metal, synthetic resin, and wood. In case of groundwater table below buried materials, strong reflection signals were observed irrespective of diameter and depth except for wood. While it is very difficult to detect the reflection signals in case that the groundwater table is set to higher than buried materials. The reflection signals from the bottom of the sand tank, however, were clearly observed even in case of higher groundwater table. This implies that the weak reflection signals from the buried materials are not all due to the wave attenuation. The vertical reflection profiling method is recommended in case that the object of the survey is to find horizontal position of buried material because this method has the advantage in cost and time of survey. However, the full or partial CMP gather method is recommended in case that the objects of the survey are to get the detailed subsurface information, i.e. the depth to buried material, interval velocity of geological layer, and mapping the groundwater table.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.