• Title/Summary/Keyword: Mesh Voltage

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Analysis of the Dangerous Voltage of Grounding Electrode According to the Burial Depth Levels (봉상접지극과 Mesh접지극의 매설깊이 변화에 따른 위험전압 분석에 관한 연구)

  • Shim, Yong-Sik;Choi, Hong-Kyoo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.4
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    • pp.38-44
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    • 2011
  • Grounding electrodes with higher burial depths are evaluated to have better performance, due to the domestic practice that puts the grounding resistance as the standard of performance evaluation, while grounding resistance decreases as the burial depth increases. However, The dangerous voltage is necessary for the analysis. Because the performance evaluation of grounding electrodes should include not only grounding resistance but also the dangerous voltage(mesh voltage and step voltage). So in this paper, The dangerous voltages of mesh grounding and rod grounding were analyzed for using computer simulation and miniature grounding model.

Improved Mesh Grounding Electrode Model by Changing Arrangements of Internal Conductors of the Mesh Grounding Electrode (메쉬접지극의 내부도체 배치에 따른 개선된 메쉬접지극 모델)

  • Shim, Yong-Sik;Choi, Hong-Kyoo;Kim, Tae-Hoon;Song, Young-Joo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.6
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    • pp.60-66
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    • 2010
  • Mesh grounding electrodes in Korea and abroad are designed as lattice-shaped equidistance grounding grids. In case of a lattice-shaped grounding Grid, however, there is a problem of higher touch voltage at the corner of the grid relative to the center. To overcome this problem, we used oblique-shaped equidistance grounding grid to reduce the area of the corner where mesh voltage occurs. As a result the mesh voltage was reduced. Therefore, this paper suggests the use of oblique-shaped grounding grid instead of the existing lattice-shaped ones. It applied the same grounding design dimensions for both lattice-shaped and oblique-shaped grounding grids, compared and analyzed mesh voltage, GPR, ground resistance, total length of grounding conductor, verified that oblique-shaped grounding grid is superior to the lattice-shaped.

Mesh Grounding Grid Design of Dangerous Voltage Review (위험전압 검토에 의한 메시접지설계)

  • Son, Seok-Geum;Kim, Jae-Chul
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.60 no.3
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    • pp.120-125
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    • 2011
  • When we design the grounding grid, dangerous voltage ANSI/IEEE Std. 80 method has been commonly used in the domestic area. However, the suitability of the ground rules for the design environment available. However, the suitability of the ground rules for the design environment available. In this paper, sticks according to the electrode conductor in combination with the mesh in order to design the ground by the IEEE Std.80 was designed. So in this paper, we examined of IEEE Std. 80 touch voltage method marginal utility and we induced for those problems by comparison between IEEE Std. 80 touch voltage value and simulation experimentation value. Furthermore, this paper presents a new design grounding system method that complements the IEEE Std. 80 method.

Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film (SIMS 분석조건이 Bismuth Titanate 박막의 깊이방향 조성 해석에 미치는 영향)

  • Kim, Jae Nam;Lee, Sang Up;Kwun, Hyug Dae;Shin, Kwang Soo;Chon, Uong;Park, Byung Ok;Cho, Sang Hi
    • Analytical Science and Technology
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    • v.14 no.6
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    • pp.486-493
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    • 2001
  • The effect of SIMS analysis conditions such as mesh grid, offset voltage and ion species on the in-depth profile for bismuth titanate thin film was examined in terms of charging effect and detection limit. The results shows that the use of offset voltage -40 V reduces the charging effect and the detection limit. The employment of mesh grid in sample preparation leads to the reduction of the charging effect in small amount, but deteriorate the detection limit. Utilization of primary $O^-$ ion for SIMS analysis of bismuth titanate thin film showed almost the same effect as using offset voltage -40 V. However, it takes approximately triple acquisition time than using $O_2{^+}$ ion due to the poor beam current of the source in the experiment.

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Mesh Grounding Design Based on the Study of Dangerous Voltage on Limited Sites (제한된 부지에서 위험전압 검토에 의한 메시 접지설계)

  • Son, Seok-Geum;Kim, Jae-Chul
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.91-97
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    • 2011
  • In Korea, characterized in most cases by limited area or high earth resistivity, it is likely to design narrow distances between grounding conductors, with a view to keeping ground resistance and touch voltage below the safety margin values. A new grounding method is suggested, making use of double meshes, to lower touch voltage in a confined area, since it is difficult to lay the plugs under the ground with narrow gaps between them on a limited site. For the presentation of a new model, the suggested grounding system has been analyzed and studied in ground resistance, touch voltage and step voltage, using IEEE Std. 80 calculations and computer simulations.

Grounding Grid Design Considering the Dangerous Voltage of Multi-layered Model in the Constrained Sites (제한된 부지 다층 대지구조에서 위험전압을 고려한 접지설계)

  • Son, Seok-Geum
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.62 no.3
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    • pp.139-144
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    • 2013
  • In Korea, where most of the sites are narrow in space and their earth resistivity is relatively high, the spaces between grounding conductors are likely to be designed narrow in order to lower ground resistance and dangerous voltage below to the permitted safety values. In addition, ground nets are in the shape of square or rectangle depending on the location and size of the facilities and ground contact area, and inner conductors are laid out in grids like the pattern of nets. Nevertheless, with the existing designs, the marginal voltage for safety gets higher as the area is extended further outside, in comparison with that of inner mesh grounding, thus causing much difficulty maintaining them equipotential, and there exist limits in the burial, grounding grid design considering the dangerous voltage of muti-layered model in the constrained sites, was studied.

According to The changing of the grounding design source, The changes in the Diagonal mesh grounding (접지제원 변화에 따른 사선 메쉬접지의 특성변화)

  • Kim, Tae-Hoon;Choi, Hong-Kyoo;Hong, Soon-Suk;Song, Young-Joo;Shim, Yong-Sik
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.347-350
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    • 2009
  • The latticed mesh grounding is compared with the diagonal mesh grounding. In the result, The latticed mesh grounding better than the diagonal mesh grounding at the maximum touch voltage, the grounding resistance and the total length of conductors.

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Improving the Long-term Field Emission Stability of Carbon Nanotubes by Coating Co and Ni Oxide Layers

  • Choe, Ju-Seong;Lee, Han-Seong;Lee, Nae-Seong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.18.1-18.1
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    • 2011
  • Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

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Development of Analysis Technique for a High Voltage Circuit Breaker Using the CFD-CAD Integration (CFD-CAD 통합해석을 이용한 초고압 가스차단기 설계 기술 개발)

  • Lee, J.C.;Oh, I.S.;Min, K.S.;Kim, Y.J.
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.523-528
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    • 2001
  • There are many difficult problems in analyzing the flow characteristics in a high voltage circuit breaker such as shock wave and complex geometries, which may be either static or in relative motion. Although a variety of mesh generation techniques are now available, the generation of meshes around complicated, multicomponent geometries like a gas circuit breaker is still a tedious and difficult task for the computational fluid dynamics. This paper presents the computational method for analyzing the compressible flow fields in a high voltage gas circuit breaker using the Cartesian cut-cell method based on the CFD-CAD integration, which can achieve the accurate representation of the geometry designed by a CAD tools. The technique is frequently satisfied, and it will be almost universally so in the future, as the CFD-CAD traffic increases.

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The Characterization of Electrolytic Ion Water Generator by Electrode (전극에 따른 전해 이온수 발생장치의 특성)

  • Han, Byung-Jo;Lee, Yeon;Ryu, Bong-Jo;Koo, Kyung-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1786-1791
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    • 2016
  • The damage has occurred inside the semiconductor pattern When using conventional wet station for semiconductor. It was used for electrolytic ion water generator in order to prevent damage to the semiconductor pattern. It was designed and developed a flow path electrode and the mesh electrode to check the efficiency of the electrode. And It confirmed the expected results through the simulation of the flow path. and ORP were measured in accordance with the current and voltage of mesh electrode and flow paht electrodes. Flow path electrode 22A is 3V, up to pH 9.8, the value of ORP-558mV was measured and the mesh electrode was measured up to pH 9.8, ORP -350mV.