• Sleep Medicine and Psychophysiology
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• v.4 no.1
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• pp.39-48
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• 1997

Memory disorder is the most consistent neuropsychological finding in schizophrenia and seems to be a stable trait in it. It is suggested that memory dysfunction found in patients with schizophrenia is primary to biological abnormalities, not secondary to attention deficits they have. Although temporal lobe structures including hippocampus and thalamus have traditionally been thought to be implicated regions for memory disorder in schizophrenia, recent studies indicate the possibility of abnormalities in the frontal lobe and the neural circuits between brain regions. Advanced research methods such as functional imaging technique are expected to produce more detailed informations about memory function in schizophrenia.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.23 no.5
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• pp.931-938
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• 2013

It is hard to extract original data from encrypted data before getting the password in encrypted data with disk encryption software. This encryption key of disk encryption software can be extract by using physical memory analysis. Searching encryption key time in the physical memory increases with the size of memory because it is intended for whole memory. But physical memory data includes a lot of data that is unrelated to encryption keys like system kernel objects and file data. Therefore, it needs the method that extracts valid data for searching keys by analysis. We provide a method that collect only saved memory parts of disk encrypting keys in physical memory by analyzing Windows kernel virtual address space. We demonstrate superiority because the suggested method experimentally reduces more of the encryption key searching space than the existing method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• ETRI Journal
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• v.36 no.6
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• pp.988-998
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• 2014

For memory-based big data storage, using hybrid memories consisting of both dynamic random-access memory (DRAM) and non-volatile random-access memories (NVRAMs) is a promising approach. DRAM supports low access time but consumes much energy, whereas NVRAMs have high access time but do not need energy to retain data. In this paper, we propose a new data migration method that can dynamically move data pages into the most appropriate memories to exploit their strengths and alleviate their weaknesses. We predict the access frequency values of the data pages and then measure comprehensively the gains and costs of each placement choice based on these predicted values. Next, we compute the potential benefits of all choices for each candidate page to make page migration decisions. Extensive experiments show that our method improves over the existing ones the access response time by as much as a factor of four, with similar rates of energy consumption.

• ETRI Journal
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• v.35 no.5
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• pp.808-818
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• 2013

Programmable memory built-in self-test (PMBIST) is an attractive approach for testing embedded memory. However, the main difficulties of the previous works are the large area overhead and low flexibility. To overcome these problems, a new flexible PMBIST (FPMBIST) architecture that can test both single-port memory and dual-port memory using various test algorithms is proposed. In the FPMBIST, a new instruction set is developed to minimize the FPMBIST area overhead and to maximize the flexibility. In addition, FPMBIST includes a diagnostic scheme that can improve the yield by supporting three types of diagnostic methods for repair and diagnosis. The experiment results show that the proposed FPMBIST has small area overhead despite the fact that it supports various test algorithms, thus having high flexibility.

• IEMEK Journal of Embedded Systems and Applications
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• v.2 no.3
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• pp.184-193
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• 2007

Flash memory adoption in the mobile devices is increasing or vanous multimedia services such as audio, videos, and games. Although the traditional research issues such as out-place update, garbage collection, and wear-leveling are important, the performance, memory usage, and fast mount issues of flash memory file system are becoming much more important than ever because flash memory capacity is rapidly increasing. In this paper, we address the problems of the existing log-based flash memory file systems analytically and propose an efficient log-based file system, which produces higher performance, less memory usage and mount time than the existing log-based file systems. Our ideas are applied to a well-known log-based flash memory file system (YAFFS2) and the performance tests are conducted by comparing our prototype with YAFFS2. The experimental results show that our prototype achieves higher performance, less system memory usage, and faster mounting than YAFFS2, which is better than JFFS2.

• Electronics and Telecommunications Trends
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• v.35 no.3
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• pp.55-65
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• 2020

With the development of nonvolatile memory technology, Intel has released the Optane datacenter persistent memory module (DCPMM) that can be deployed in the dual in-line memory module. The results of research and experiments on Optane DCPMMs are significantly different from the anticipated results in previous studies through emulation. The DCPMM can be used in two different modes, namely, memory mode (similar to volatile DRAM: Dynamic Random Access Memory) and app direct mode (similar to file storage). It has buffers in 256-byte granularity; this is four times the CPU (Central Processing Unit) cache line (i.e., 64 bytes). However, these properties are not easy to use correctly, and the incorrect use of these properties may result in performance degradation. Optane has the same characteristics of DRAM and storage devices. To take advantage of the performance characteristics of this device, operating systems and applications require new approaches. However, this change in computing environments will require a significant number of researches in the future.

• International journal of advanced smart convergence
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• v.1 no.2
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• pp.26-29
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• 2012

Recently, to efficiently support the real-time requirements of RTLS( Real Time Location System) services, interest in the main memory DBMS is rising. In the main memory DBMS, because all data can be lost when the system failure happens, the recovery method is very important for the stability of the database. Especially, disk I/O in executing the log and the checkpoint becomes the bottleneck of letting down the total system performance. Therefore, it is urgently necessary to research about the recovery method to reduce disk I/O in the main memory DBMS. Therefore, In this paper, we analyzed existing log techniques and check point techniques and existing main memory DBMSs' recovery techniques for recovery techniques research for main memory DBMS.

• Electronics and Telecommunications Trends
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• v.38 no.5
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• pp.23-33
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• 2023

With the widespread demand from data-intensive tasks such as machine learning and large-scale databases, the amount of data processed in modern computing systems is increasing exponentially. Such data-intensive tasks require large amounts of memory to rapidly process and analyze massive data. However, existing computing system architectures face challenges when building large-scale memory owing to various structural issues such as CPU specifications. Moreover, large-scale memory may cause problems including memory overprovisioning. The Compute Express Link (CXL) allows computing nodes to use large amounts of memory while mitigating related problems. Hence, CXL is attracting great attention in industry and academia. We describe the overarching concepts underlying CXL and explore recent research trends in this technology.