• Title/Summary/Keyword: Memory reduction

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Cache Simulator Design for Optimizing Write Operations of Nonvolatile Memory Based Caches (비휘발성 메모리 기반 캐시의 쓰기 작업 최적화를 위한 캐시 시뮬레이터 설계)

  • Joo, Yongsoo;Kim, Myeung-Heo;Han, In-Kyu;Lim, Sung-Soo
    • IEMEK Journal of Embedded Systems and Applications
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    • v.11 no.2
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    • pp.87-95
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    • 2016
  • Nonvolatile memory (NVM) is being considered as an alternative of traditional memory devices such as SRAM and DRAM, which suffer from various limitations due to the technology scaling of modern integrated circuits. Although NVMs have advantages including nonvolatility, low leakage current, and high density, their inferior write performance in terms of energy and endurance becomes a major challenge to the successful design of NVM-based memory systems. In order to overcome the aforementioned drawback of the NVM, extensive research is required to develop energy- and endurance-aware optimization techniques for NVM-based memory systems. However, researchers have experienced difficulty in finding a suitable simulation tool to prototype and evaluate new NVM optimization schemes because existing simulation tools do not consider the feature of NVM devices. In this article, we introduce a NVM-based cache simulator to support rapid prototyping and evaluation of NVM-based caches, as well as energy- and endurance-aware NVM cache optimization schemes. We demonstrate that the proposed NVM cache simulator can easily prototype PRAM cache and PRAM+STT-RAM hybrid cache as well as evaluate various write traffic reduction schemes and wear leveling schemes.

Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel (멀티레벨셀 낸드 플래시 메모리에서 커플링 제거기의 윈도우 크기에 따른 성능 비교)

  • Park, Dong-Hyuk;Lee, Jae-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.8A
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    • pp.706-711
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    • 2012
  • Multi-level cell NAND flash is a flash memory technology using multiple levels per cell to allow more bits to be stored. Currently, most multi-level cell NAND stores 2 bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. The most error cause is coupling noise. Thus, in this paper, we studied coupling noise cancellation scheme for reduction memory on the 16-level cell NAND flash memory channel. Also, we compared the performance threshold detection and proposed scheme.

Effects of Geonne-Eum on Learning and Memory Function in Model Rat Injured by Ibotenate (건뇌음이 해마손상백서의 기억 및 학습기능 회복에 미치는 영향)

  • Rho Sang Yong;Eom Hyun Sup;Chi Gyoo Yong
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.17 no.2
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    • pp.553-559
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    • 2003
  • In order to make the efficient prescription and cope with various senile dementia, learning and memory functions of Sprague-Dawley model rats were tested with Morris water maze at first. And to evaluate the effects of the sample drug(GM) on choline acetyltranferase and acetylcholine esterase, immunoreactive measurement and enzymatic activity measuring were carried out. Rats were injected with ibotenic acid through hippocampus CA1 and CA3 area. The results are as following. GM improves the learning ability in tile acquisition test and memory function in the retention test significantly. And GM increases the level of ChAT which is synthesizing acetylcholine in CA3 area, and at the same time it increases the level of AChE which is resolving acetylcholine. These results show that GM improve the cholinergic catabolism and anabolism, and the increment of metabolic activity of cholinergic system contributes to the recovery of damaged learning and memory function by ibotenic acid. So it can be concluded that GM will be helpful to cholinergic brain disease induced by primary or senile reduction of acetylcholine secretive activity.

Memory Characteristics of High Density Self-assembled FePt Nano-dots Floating Gate with High-k $Al_2O_3$ Blocking Oxide

  • Lee, Gae-Hun;Lee, Jung-Min;Yang, Hyung-Jun;Kim, Kyoung-Rok;Song, Yun-Heub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.388-388
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    • 2012
  • In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

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Implementation and Performance Evaluation of Software Distributed Shared Memory for SMP Clusters (SMP 클러스터를 위한 소프트웨어 분산 공유메모리의 구현 및 성능 측정)

  • 이동현;이상권;박소연;맹승렬
    • Journal of KIISE:Computer Systems and Theory
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    • v.30 no.7_8
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    • pp.331-340
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    • 2003
  • Low-cost commodity SMP(Symmetric Multiprocessor) is widely used as a node of cluster system. In this paper, we implement and evaluate the performance of SDSM system for SMP clusters. Our SDSM system provides HLRC(Home-based Lazy Release Consistency) memory consistency model. Our protocol utilize shared memory within same SMP node, so that page fetch and message passing through network can be reduced. It is implemented on 8 node of 2-way Pentium-III SMP interconnected with 100Mbps Fast Ethernet, and uses TCP/IP for transport/network layer protocol. The experiment with eight applications shows that our SMP protocol achieves maximum 33% speedup improvement and 13%-52% reduction of page fetch compared with uniprocessor protocol.

Reduced contact size in $Ge_1Se_1Te_2$ for phase change random access memory (PRAM에서 $Ge_1Se_1Te_2$와 전극의 접촉 면적을 줄이는 방법에 대한 효과)

  • Lim, Dong-Kyu;Kim, Jae-Hoon;Na, Min-Seok;Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.154-155
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    • 2007
  • PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material and presented the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. In this letter, we expect the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode to decrease writing current.

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An Adaptive Prefetching Technique for Software Distributed Shared Memory Systems (소프트웨어 분산공유메모리시스템을 위한 적응적 선인출 기법)

  • Lee, Sang-Kwon;Yun, Hee-Chul;Lee, Joon-Won;Maeng, Seung-Ryoul
    • Journal of KIISE:Computer Systems and Theory
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    • v.28 no.9
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    • pp.461-468
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    • 2001
  • Though shared virtual memory (SVM) system promise low cost solutions for high performance computing they suffer from long memory latencies. These latencies are usually caused by repetitive invalidations on shared data. Since shared data are accessed through synchronization and the patterns by which threads synchronizes are repetitive, a prefetching scheme bases on such repetitiveness would reduce memory latencies. Based on this observation, we propose a prefetching technique which predicts future access behavior by analyzing access history per synchronization variable. Our technique was evaluated on an 8-node SVM system using the SPLASH-2 benchmark. The results show the our technique could achieve 34%~45% reduction in memory access latencies.

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Si-Containing Nanostructures for Energy-Storage, Sub-10 nm Lithography, and Nonvolatile Memory Applications

  • Jeong, Yeon-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.108-109
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    • 2012
  • This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

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Ameliorating Effects of HPM-1 on Scopolamine-induced Memory Impairments in Mice (몰약 당귀 오미자 혼합제제 HPM-1의 Scopolamine에 의해 유도된 기억력 감퇴에 대한 개선 효과)

  • Ahn, Jeewoon;Kim, Dae-Sung;Cho, Hyoung-Kwon;Kim, Youn-Chul;Kim, Sung Yeon;Oh, Hyuncheol;Seo, Jungwon
    • Korean Journal of Pharmacognosy
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    • v.46 no.3
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    • pp.243-249
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    • 2015
  • Myrrh, Angelicae Radix, and Schisandrae Fructus have been used to treat diverse diseases including neurological disorder in the traditional Korean medicine. In the present study, we investigated the ameliorating effects of HPM-1, a combined extract of Myrrh, Angelicae Radix and Schisandrae Fructus, on scopolamine-induced memory impairments in mice. First, we assessed HPM-1, HPM-2 and HPM-3, in which Myrrh was extracted with water, 30% ethanol, and 30% ethanol/3% vinegar, respectively. The oral administration of HPM-1, HPM-2, or HPM-3 significantly reversed scopolamine-induced reduction of spontaneous alternation in the Y-maze task. In the passive avoidance task, HPM-1 or HPM-3 restored the decreased latency time of the retention trial by scopolamine treatment, but in terms of efficacy, HPM-1 showed more beneficial effects than HPM-3. In addition, HPM-1 administration reversed scopolamine-induced reduction of spontaneous alternation in the Y-maze task and scopolamine-decreased latency time in the passive avoidance in a dose-dependent manner. These results suggest that HPM-1 has the therapeutic potential in memory impairments.

A New Predictive EC Algorithm for Reduction of Memory Size and Bandwidth Requirements in Wavelet Transform (웨이블릿 변환의 메모리 크기와 대역폭 감소를 위한 Prediction 기반의 Embedded Compression 알고리즘)

  • Choi, Woo-Soo;Son, Chang-Hoon;Kim, Ji-Won;Na, Seong-Yu;Kim, Young-Min
    • Journal of Korea Multimedia Society
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    • v.14 no.7
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    • pp.917-923
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    • 2011
  • In this paper, a new prediction based embedded compression (EC) codec algorithm for the JPEG2000 encoder system is proposed to reduce excessive memory requirements. The EC technique can reduce the 50 % memory requirement for intermediate low-frequency coefficients during multiple discrete wavelet transform (DWT) stages compared with direct implementation of the DWT engine of this paper. The LOCO-I predictor and MAP are widely used in many lossless picture compression codec. The proposed EC algorithm use these predictor which are very simple but surprisingly effective. The predictive EC scheme adopts a forward adaptive quantization and fixed length coding to encoding the prediction error. Simulation results show that our LOCO-I and MAP based EC codecs present only PSNR degradation of 0.48 and 0.26 dB in average, respectively. The proposed algorithm improves the average PSNR by 1.39 dB compared to the previous work in [9].