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http://dx.doi.org/10.7840/kics.2012.37A.8.706

Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel  

Park, Dong-Hyuk (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Lee, Jae-Jin (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.37, no.8A, 2012 , pp. 706-711 More about this Journal
Abstract
Multi-level cell NAND flash is a flash memory technology using multiple levels per cell to allow more bits to be stored. Currently, most multi-level cell NAND stores 2 bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. The most error cause is coupling noise. Thus, in this paper, we studied coupling noise cancellation scheme for reduction memory on the 16-level cell NAND flash memory channel. Also, we compared the performance threshold detection and proposed scheme.
Keywords
Coupling cancellation; coupling canceller; Multi-level cell; NAND flash memory;
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