• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2009년도 춘계 종합학술대회 논문집
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• pp.743-747
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• 2009

자동차 판매량의 증가하고 좀 더 편안하게 운전하기 위해 내비게이션을 구입하는 사람들이 점점 늘어나고 있다. 하지만 그에 반해 내비게이션 구입 후 자주 바뀌는 지도, 카메라, 음성 등의 다양한 콘텐츠 정보를 업데이트 하지 않고 그대로 사용하고 있다. 그 이유는 내비게이션에서 SD카드를 분리 하여 수작업으로 컴퓨터에 연결해 매번 다운받는 불편함이 있기 때문이다. 본 논문에서는 이러한 문제점을 해결하기 위해 사람들이 많이 찾는 주유소 등의 AP를 활용하여 자동으로 최신 콘텐츠를 업데이트 받는 시스템을 설계 구현하였다. 인증 받지 않은 사용자가 무상으로 주유소 등의 AP를 사용하는 것을 방지하기 위해 MAC address를 사용하여, 고유한 SSID를 검색하여 접속하도록 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.574-577
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• 2002

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1260-1263
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• 2005

Data storage related with writing and retrieving requires high storage capacity, fast transfer rate and less access time. Today any data storage system cannot satisfy these conditions, however holographic data storage system can perform faster data transfer rate because it is a page oriented memory system using volume hologram in writing and retrieving data. System can be constructed without mechanical actuating part therefore fast data transfer rate and high storage capacity about 1Tb/cm3 can be realized. In this research, to reduce errors of binary data stored in holographic data storage system, a new method for bit error reduction is suggested. First, find fuzzy rule using experimental system for Element of Holographic Digital Data System. Second, make fuzzy rule table using Genetic algorithm. Third, reduce prior error element and recording Digital Data. Recording ratio and reconstruction ratio will be very good performance

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• 한국정밀공학회지
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• 제24권10호
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• pp.46-53
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• 2007

This paper describes the development of a high-precision measuring device with DSP (digital signal processor) for the accurate measurement of the 6-axis force/moment sensor mounted to a humanoid robot's ankle. In order to walk on uneven terrain safely, the foot should perceive the applied forces Fx, Fy, and Fz and moments Mx, My, and Mz to itself, and control the foot using the measured them. The applied forces and moments should be measured from two 6-axis force/moment sensors mounted to the feet, and the sensor is composed of Fx sensor, Fy sensor, Fz sensor, Mx sensor, My sensor and Mz sensor in a body (single block). In order to acquire output values from twelve sensors (two 6-axis force/moment sensor) accurately, the measuring device should get the function of high speed, and should be small in size. The commercialized measuring devices have the function of high speed, unfortunately, they are large in size and heavy in weight. In this paper, the high-precision measuring device for acquiring the output values from two 6-axis force/moment sensors was developed. It is composed of a DSP (150 MHz), a RAM (random access memory), amplifiers, capacities, resisters and so on. And the characteristic test was carried out.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.15-16
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• 2010

• 천문학회보
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• 제43권1호
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• pp.70.3-70.3
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• 2018

외계행성 탐색시스템의 망원경-카메라 제어 시스템 및 소프트웨어 구성과 관측 유틸리티에 대해 소개한다. 망원경 제어 소프트웨어는 천문 위치보정, 포인팅, 돔 회전 등을 담당하는 PC-TCS 프로그램, 망원경 적경-적위 축 서보 제어를 담당하는 full-closed loop PID 컨트롤 프로그램, 포커서, 필터박스, 돔 셔터, 주경냉각, 온도 모니터 등의 보조 시스템을 제어하는 AUX controls 프로그램으로 구성된다. 카메라 제어 소프트웨어는 모자이크로 구성된 여러 CCD를 각각 독립적으로 제어하는 IC(Instrument Control) 패키지와 이들을 총괄 제어하는 ICS(IC Science) 패키지로 구성되며 망원경과 카메라 소프트웨어의 인터페이스 역할을 하는 TCS Agent 프로그램이 포함된다. 관측 진행을 돕는 유틸리티로서 관측제어 명령어 입력 및 관측 스크립트 구동 기능을 제공하는 OBS Agent 프로그램과 가이드 CCD를 이용한 시상 모니터링 및 자동초점조정 프로그램을 개발하여 활용하고 있다. 각 소프트웨어는 UDP, TCP/IP, RS-232, Redis server 등 다양한 인터페이스를 통하여 서로 통신하며, CCD 영상 자료 전달을 위해 RAM(Random Access Memory) 디스크와 Network File System(NSF)을 이용하고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.