• Title/Summary/Keyword: Memory access

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A Mass-Processing Simulation Framework for Resource Management in Dense 5G-IoT Scenarios

  • Wang, Lusheng;Chang, Kun;Wang, Xiumin;Wei, Zhen;Hu, Qingxin;Kai, Caihong
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.9
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    • pp.4122-4143
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    • 2018
  • Because of the increment in network scale and test expenditure, simulators gradually become main tools for research on key problems of wireless networking, such as radio resource management (RRM) techniques. However, existing simulators are generally event-driven, causing unacceptably large simulation time owing to the tremendous number of events handled during a simulation. In this article, a mass-processing framework for RRM simulations is proposed for the scenarios with a massive amount of terminals of Internet of Things accessing 5G communication systems, which divides the time axis into RRM periods and each period into a number of mini-slots. Transmissions within the coverage of each access point are arranged into mini-slots based on the simulated RRM schemes, and mini-slots are almost fully occupied in dense scenarios. Because the sizes of matrices during this process are only decided by the fixed number of mini-slots in a period, the time expended for performance calculation is not affected by the number of terminals or packets. Therefore, by avoiding the event-driven process, the proposal can simulate dense scenarios in a quite limited time. By comparing with a classical event-driven simulator, NS2, we show the significant merits of our proposal on low time and memory costs.

Electrical Conduction Mechanism in the Insulating TaNx Film (절연성 TaNx 박막의 전기전도 기구)

  • Ryu, Sungyeon;Choi, Byung Joon
    • Korean Journal of Materials Research
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    • v.27 no.1
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    • pp.32-38
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    • 2017
  • Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

High Density MRAM Device Technology Based on Magnetic Tunnel Junctions (자기터널접합을 활용한 고집적 MRAM 소자 기술)

  • Chun, Byong-Sun;Kim, Young-Keun
    • Journal of the Korean Magnetics Society
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    • v.16 no.3
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    • pp.186-191
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    • 2006
  • Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

Nitrogen을 도핑시킨 Ge-Sb-Te 박막의 광전자 및 광흡수 분광학 연구

  • Sin, Hyeon-Jun;Jeong, Min-Cheol;Kim, Min-Gyu;Lee, Yeong-Mi;Kim, Gi-Hong;Jeong, Jae-Gwan;Song, Se-An;Sun, Zhimei
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.186-186
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    • 2013
  • Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

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Reporting Tool using Fat Client for Web-based Ad Hoc Reporting (웹 기반의 Ad Hoc 리포팅을 위한 Fat Client를 갖는 리포팅 툴)

  • Choe Jee-Woong;Kim Myung-Ho
    • Journal of KIISE:Computing Practices and Letters
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    • v.12 no.4
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    • pp.264-274
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    • 2006
  • Recently, a variety of organizations including enterprises tend to try to use reporting tools as a data analysis tool for decision making support because reporting tools are capable of formatting data flexibly. Traditional reporting tools have thin-client structure in which all of dynamic documents are generated in the server side. This structure enables reporting tools to avoid repetitive process to generate dynamic documents, when many clients intend to access the same dynamic document. However, generating dynamic documents for data analysis doesn't consider a number of potential readers and increases requests to the server by making clients input various parameters at short intervals. In the structure of the traditional reporting tools, the increase of these requests leads to the increase of processing load in the server side. Thus, we present the reporting tool that can generate dynamic documents at the client side. This reporting tool has a processing mechanism to deal with a number of data despite the limited memory capacity of the client side.

Performance Analyses of Instruction Fetch Models Considering Cache Miss and Branch Misprediction (캐쉬 미스와 분기예측 실패를 고려한 명령어 페치 모델의 성능분석)

  • Kim, Seon-Mo;Jeong, Jin-Ha;Choe, Sang-Bang
    • Journal of KIISE:Computer Systems and Theory
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    • v.28 no.12
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    • pp.685-697
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    • 2001
  • Cache memories are small fast memories used to temporarily hold the contents of main memory that are likely to be referenced by processors so as to reduce instruction and data access time. In this paper, we represent analytical models of instruction fetch process for four types of instruction cache structures that can be used for superscalar processors. In the models, we define various kinds of architectural parameters and take cache miss and branch misprediction into consideration. To prove the correctness of the proposed models, we performed extensive simulations and compared the results with the analytical models. Simulation results showed that the proposed model can estimate the instruction fetch rate accurately within 10% error in most cases. Both analytical model and simulation show that the increase of cache misses reduces the instruction fetch rate more severely than that of branch misprediction does. However, the analytical model can explain the causes of performance degradation which cannot be uncovered by the simulation method only. The model is also able to provide exact relationship between cache miss and branch misprediction for instruction fetch analysis.

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A study on the effects of digital content marketing in OTT (Over The Top) service platform: focusing on indirect advertising types (OTT(Over The Top) 서비스 플랫폼에서 디지털 콘텐츠마케팅 효과 연구: 간접광고 유형을 중심으로)

  • Kim, Tae-Yang
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.4
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    • pp.155-164
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    • 2020
  • This study measured the effect of PPL(Product Placement: PPL) in OTT(Over The Top) to search a new advertising revenue model according to the change of viewers' video content consumption patterns. On the first, by two research steps, the experiment was carried out using an eye-tracker and then a survey as the second step was administered asking subjects about their attitude about advertising messages, attitude about brand, and intention to purchase the brands used in the experiments. Specifically, the PPL materials used in the experiments were classified with three parts. This study has the meaning as approaching to the PPL research with new methodology by quantitatively access through the eye tracking of the subjects beyond the conventional qualitative measure that depends only on the memory of them. This research aims to find the possibility of indirect advertising as a new revenue model in the OTT environment.

The Effects of Age and Type of Imperative Statement on Behavioral Intention and Recall (명령문에 대한 행동의도와 기억에 있어서 나이와 명령문 유형이 미치는 영향)

  • Min, Dongwon
    • Journal of Digital Convergence
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    • v.18 no.1
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    • pp.53-58
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    • 2020
  • Various imperative statements that can be represented in the way in which the product or service is used describe how or how to achieve the goals, or induce or prohibit a specific action. This study focuses on The Effects of age and type of imperative sentence (directive vs. declarative) on behavioral intention and recall. As a result of the experiment, older people who have shorter lives remaining access information in a more emotional way, so they have been rejected by directive (vs. declarative) statements that felt more negative feelings, resulting in lowered behavioral intention. Conversely, the negative feeling caused by directive statements increased salience of directive (vs. declarative) sentence for older people more, which in turn increased memory for older people. Process analysis showed that emotions when exposed to statements mediated these results. The results of this study show that in order to improve consumers' behavioral response and/or the performance of information processing, it is necessary to deeply consider their age and how to construct the statement.

Hybrid Priority Medium Access Control Scheme for Wireless Body Area Networks (무선 인체통신 네트워크를 위한 복합 우선순위 MAC 기법)

  • Lee, In-Hwan;Lee, Gun-Woo;Cho, Sung-Ho;Choo, Sung-Rae
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.9B
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    • pp.1305-1313
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    • 2010
  • Last few years, wireless personal area network (WPAN) has been widely researched for various healthcare applications. Due to restriction of device hardware (e.g., energy and memory), we need to design a highly-versatile MAC layer protocol for WBAN (Wireless Body Area Network). In addition, when an emergency occurs to a patient, a priority mechanism is necessitated for a urgent message to get through to the final destination. This paper presents a priority mechanism referred to as hybrid priority MAC for WBAN. Through extensive simulation, we show the proposed MAC protocol can minimize the average packet latency for urgent data. Thus, when patients have an emergency situation, our MAC allows adequate assistance time and medical treatment for patients. The simulation based on NS-2 shows that our Hybrid Priority MAC has the good performance and usability.

The Electrical Improvement of PZT Thin Films Etched into CF4/(Cl2+Ar) Plasma

  • Koo Seong-Mo;Kim Kyoung-Tae;Kim Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.223-226
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    • 2004
  • The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_{4}/(Cl_{2}+Ar)$ plasma and investigated improvement in etching damage by $O_{2}$ annealing. The maximum etch rate of the PZT thin films was 157 nrn/min and that the selectivity of the PZT thin films to Pt was 3.1 when $CF_{4}(30{\%})$ was added to a $Cl_{2}(80{\%})/Ar(20{\%})$ gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_{2}$ atmosphere. After $O_{2}$ annealing, the remanent polarization of the asdeposited films was $34.6{\mu}/cm^{2}$ and the sample annealed at 650, 550, and $450^{\circ}C$ was 32.8, 22.3, and $18.6{\mu}/cm^{2}$, respectively. PZT thin films with $O_{2}$ annealing at $450^{\circ}C$ retained $77{\%}$ of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at $450^{\circ}C$.