• Journal of the Korean Crystal Growth and Crystal Technology
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• 제3권2호
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• pp.117-124
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• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제19권5호
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제4권2호
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• pp.111-118
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• 1994

Silicon single crystals were continuously grown by a modified process. Polycrystalline silicon powder was fed from the top reservoir to the growth chamber. Silicon single crystals were grown from the botton of the growth chamber. The balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed was the one of the main factors to control the diameter of crystals grown and quality, etc.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제13권1호
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제15권4호
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• pp.141-144
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• 2005

[ $(Y_{0.5}Sm_{0.25}Nd_{0.25})Ba_2Cu_3O_y$ ] [(YSN)-123] high $T_c$ composite superconductors with $CeO_2$ addition were systematically investigated by top seeded melt growth (TSMG) process in air atmosphere. A melt textured $NdBa_2Cu_3O_y$ (Nd-123) single crystal was used as a seed for achieving the c-axis alignment large grains perpendicular to the surface of (YSN)-123 composite oxides. The size of $(Y_{0.5}Sm_{0.25}Nd_{0.25})_2BaCuO_5$ [(YSN)211] nonsuperconducting inclusions of the melt textured (YSN)-123 samples with $CeO_2$ addition were remarkably reduced and uniformly distributed within the (YSN)123 superconducting matrix except in the region very close to the Nd-123 seed crystal. The sample showed a sharp superconducting transition of 91 K.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제4권1호
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• pp.121-131
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• 2000

Melt flow, heat and mass transfer of oxygen have been analyzed numerically in the process of Czochralski single crystal growth of silicon under the influence of misaligned cusp magnetic fields. Since the silicon melt in a crucible for crystal growth is of high temperature and of highly electrical-conducting, experimentation method has difficulty in analyzing the behavior of the melt flow. A set of simultaneous nonlinear equations including Navier-Stokes and Maxwell equations has been used for the modelling of the melt flow which can be regarded as a liquid metal. Together with the melt flow which forms the Marangoni convection, a flow circulation is observed near the comer close both to the crucible wall and the free surface. The melt flow tends to follow the magnetic lines instead of traversing the lines. These flow characteristics helps the flow circulation exist. Mass transfer characteristics influenced by the melt flow has been analyzed and the oxygen absorption rate to the crystal has been calculated and turned out to be rather uniform than in the case of an aligned magnetic field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제7권1호
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• pp.27-40
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• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• Journal of the Korean Ceramic Society
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• 제56권6호
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• pp.589-595
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• 2019

The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crystal quality. In this study, the effects of the aperture at the top of the hot-zone on the growth of the SiC single crystal obtained using the TSSG method were evaluated using multiphysics simulations. The temperature distribution and C concentration profile in the Si melt were taken into consideration. The simulation results showed that the adjustment of the aperture at the top of the hot-zone and the temperature gradient in the melt could be finely controlled. The surface morphology, crystal quality, and polytype stability of the grown SiC crystals were investigated using optical microscopy, high-resolution X-ray diffraction, and micro-Raman spectroscopy, respectively. The simulation and experimental results suggested that a small temperature gradient at the crystal-melt interface is suitable for growing high-quality SiC single crystals via the TSSG method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제15권5호
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• pp.188-192
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• 2005

High $T_c(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-123]$ superconductors with/without $CeO_2$ additive were systematically investigated by the zone melt growth process in air. Cylindrical green rods of (YNS)-123 oxides were fabricated by cold isostatic pressing (CIP) method using rubber mould. A sample prepared by this method showed well-textured microstructure, and $(Y_{0.5}Nd_{0.25}Sm_{0.25})_2BaCuO_5[(YNS)211]$ nonsuperconducting inclusions were uniformly dispersed in large $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y$[(YNS)123] superconducting matrix. In this study, optimum melting temperature and growth rate were $1100^{\circ}C$ and 3 mm/hr, respectively. The directionally melt-textured (YNS)-123 sample with $CeO_2$ additive showed an onset critical temperature $(T_c)\;T_c{\geq}93K$ and sharp superconducting transition.

• Current Photovoltaic Research
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• 제8권1호
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.