• Journal of the Korean Society for Precision Engineering
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• v.17 no.3
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• pp.184-191
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• 2000

Properties of pad are investigated to find the relationship between the chemical mechanical polishing(CMP) results, such as material removal rate and within wafer non-uniformity(WIWNU), and its properties. Polishing pressure is considered as important factors to affect the results, so behavior of ordinary polymer is studied to define the polishing result affecting properties of pad. Experimental setup is devised to identify the behavior of pad and several different pads are used in chemical mechanical polishing experiments to verify the correlations between pad properties and polishing results. The results indicate that the viscoelastic properties of pad had relationships with the polishing results, and shows correlation between suggested properties of pad and polishing result.

• Structural Engineering and Mechanics
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• v.35 no.2
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• pp.127-140
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• 2010

This paper focuses on a number of criteria that enable controlling the influence of geometric simplification on the quality of finite element (FE) computations. To perform the mechanical simulation of a component, the corresponding geometric model typically needs to be simplified in accordance with hypotheses adopted regarding the component's mechanical behaviour. The method presented herein serves to compute an a posteriori indicator for the purpose of estimating the significance of each feature removal. This method can be used as part of an adaptive process of geometric simplification. If a shape detail removed during the shape simplification process proves to be influential on mechanical behaviour, the particular detail can then be reinserted into the simplified model, thus making it possible to readapt the initial simulation model. The fields of application for such a method are: static problems involving linear elastic behaviour, and linear thermal problems with stationary conduction.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.272-277
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• 1998

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.2
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• pp.299-303
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• 2004

The conventional drilling method of caries removal makes vibration and thermal stimuli, so that children are afraid of dental treatment. Recently, various non-invasive caries removal techniques of alternatives to traditional methods are introduced and chemo-mechanical caries removal is one of them. $Carisolv^{TM}$ comprises a gel that is composed of three different amino acids and a low concentration of sodium hypochlorite and specially-designed hand instruments. This report describes two cases of dental caries treatment with $Carisolv^{TM}$. The carious dentin was eliminated with $Carisolv^{TM}$ gel with instruments and then composite resin restoration was conducted.

• Nuclear Engineering and Technology
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• v.54 no.9
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• pp.3310-3316
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• 2022

Owing to the rising concerns about the safety of nuclear power plants (NPP), it is essential to study the venturi scrubber in detail, which is a key component of the filtered containment venting system (FCVS). FCVS alleviates the pressurein containment byfiltering and venting out the contaminated air. Themain objective of this research was to perform a CFD investigation of different configurations of a circular, non-submerged, self-priming venturi scrubber to estimate and improve the performance in the removal of elemental iodine from the air. For benchmarking, a mass transfer model which is based on two-film theory was selected and validated by experimental data where an alkaline solution was considered as the scrubbing solution. This mass transfer model was modified and implemented on a unique formation of two self-priming venturi scrubbers in series. Euler-Euler method was used for two-phase modeling and the realizable K-ε model was used for capturing the turbulence. The obtained results showed a remarkable improvement in the removal of radioactive iodine from the air using a series combination of venturi scrubbers. The removal efficiency was improved at every single data point.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.9
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• pp.1037-1041
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• 2014

Slurry used for polishing semiconductors processed by exchange, pressurization, and multi-step feeding has been studied to investigate the effect of the size and shape of slurry particles on the oxide CMP removal rate. First, spherical silica sol was prepared by the ion exchange method. The spherical silica particle was used as a seed to grow non-spherical silica sol in accordance with the multi-step feeding of silicic acid by the ion exchange and pressurization methods. The oxide removal rate of both non-spherical silica sol and commercially available slurry were compared with increasing average particle size in the oxide CMP. The more alkaline the pH level of the non-spherical silica sol, the higher was the removal rate and non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• Journal of Korea Multimedia Society
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• v.25 no.9
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• pp.1266-1272
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• 2022

With the recent development of computer vision technology, image processing-based mechanical devices are being developed to realize autonomous driving. The camera-taken images of image processing-based machines are invisible due to scattering and absorption of light in foggy conditions. This lowers the object recognition rate and causes malfunction. The safety of the technology is very important because the malfunction of autonomous driving leads to human casualties. In order to increase the stability of the technology, it is necessary to apply an efficient haze removal algorithm to the camera. In the conventional haze removal method, since the haze removal operation is performed regardless of the haze concentration of the input image, excessive haze is removed and the quality of the resulting image is deteriorated. In this paper, we propose an automatic haze removal method that removes haze according to the haze density of the input image by applying Ngo's Haziness Degree Evaluator (HDE) to Kim's haze removal algorithm using Hazy Particle Map. The proposed haze removal method removes the haze according to the haze concentration of the input image, thereby preventing the quality degradation of the input image that does not require haze removal and solving the problem of excessive haze removal. The superiority of the proposed haze removal method is verified through qualitative and quantitative evaluation.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.