• Tribology and Lubricants
• /
• 제34권6호
• /
• pp.209-216
• /
• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Nuclear Engineering and Technology
• /
• 제55권1호
• /
• pp.169-179
• /
• 2023

Filtered containment system is a passive safety system that controls the over-pressurization of containment in case of a design-based accidents by venting high pressure gaseous mixture, consisting of air, steam and radioactive particulate and gases like iodine, via a scrubbing system. An indigenous lab scale facility was developed for research on iodine removal by venturi scrubber by simulating the accidental scenario. A mixture of 0.2 % sodium thiosulphate and 0.5 % sodium hydroxide, was used in scrubbing column. A modified mathematical model was presented for iodine removal in venturi scrubber. Improvement in model was made by addition of important parameters like jet penetration length, bubble rise velocity and gas holdup which were not considered previously. Experiments were performed by varying hydrodynamic parameters like liquid level height and gas flow rates to see their effect on removal efficiency of iodine. Gas holdup was also measured for various liquid level heights and gas flowrates. Removal efficiency increased with increase in liquid level height and gas flowrate up to an optimum point beyond that efficiency was decreased. Experimental results of removal efficiency were compared with the predicted results, and they were found to be in good agreement. Maximum removal efficiency of 99.8% was obtained.

• 한국정밀공학회지
• /
• 제28권6호
• /
• pp.701-708
• /
• 2011

Although Titanium material has superior properties, it belongs to difficult-to-machine materials. The present research applies magnetic abrasive finishing to precision machining of internal-face of titanium pipes, and analyzed & assessed the influence of grinding conditions on magnetic abrasive effects through the removed amount and surface roughness of materials. There was the influence on grinding properties according to change of rotational speed, a total input of mixed powder and an input of grinding liquid, and when the total input, rotational speed and ratio of electrolytic iron versus magnetic abrasives are 8g and 1000rpm, it was most advantageous in aspects of surface roughness and material removal amount, and the grinding liquid remarkably improved the surface roughness and material removal amount only with addition of trace amounts of light oil rather than dry machining conditions. And a result of considering the influence on grinding properties by using an inert gas (Argon gas) for improving grinding properties of the internal-face of titanium pipe, the present research has obtained improvement effects in the removal amount and surface roughness through utilization of an inert gas.

• Tribology and Lubricants
• /
• 제15권1호
• /
• pp.90-97
• /
• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• 한국정밀공학회지
• /
• 제17권1호
• /
• pp.179-184
• /
• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

• 한국대기환경학회지
• /
• 제24권6호
• /
• pp.641-648
• /
• 2008

A plate-type dielectric barrier discharge (DBD) reactor was designed and tested for removal of gaseous toluene. The DBD reactor consisted of 9 parallel plate electrodes, four of which were grounded. An AC voltage of rectangular waveform ($5{\sim}8.5kV$, $60{\sim}1,000Hz$), was applied to the other five electrodes. The gaseous toluene passed through the DBD reactor and its concentration was measured by a real-time gas analyzer. The carbon monoxide (CO) and carbon dioxide ($CO_2$) which were produced by decomposition of toluene in the DBD reactor, were sampled and analyzed by a micro gas chromatography. The maximum toluene removal efficiency was 51.4%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.359-361
• /
• 2006

As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

• 대한기계학회논문집A
• /
• 제27권10호
• /
• pp.1800-1808
• /
• 2003

This work deals with the electrical conductivity of dielectric on output parameters such as metal removal rate and surface roughness value of a carbon steel(SM25C) and sintered carbides cut by wire-electrical discharge machining(W-EDM). Dielectric has several functions like insulation, ionization, cooling, the removal of waste metal particles. The presence of minute particles(gap debris) in spark gap contaminates and lowers the breakdown strength of dielectric. And it is considered that too much debris in spark gap is generally believed to be the cause of arcing. Experimental results show that increases of cobalt amount in carbides affects the metal removal rate and worsens the surface quality as a greater quantity of solidified metal deposits on the eroded surface. Lower electrical conductivity of the dielectric results in a lower metal removal rate because the gap between wire electrode and workpiece reduced. Especially, the surface characteristics of rough-cut workpiece and wire electrode were analyzed too. Debris were analyzed also through scanning electron microscopy(SEM) and surface roughness tester. Micro cracks and some of electrode material are found on the workpiece surface by energy dispersive spectrometer(EDS).

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2007년도 춘계학술대회 논문집
• /
• pp.29-30
• /
• 2007

• 한국진공학회지
• /
• 제9권2호
• /
• pp.102-109
• /
• 2000

chemical mechanical Polishing (CMP)공정 중 제거된 막과 연마재의 지꺼기를 제거하기 위하여 일반적으로 사용하는 scrubbing과 같은 기계적인 세정법으로는 기가급 소자 제조시에 요구되는 $10^{10}/\textrm{cm}^2$ 이하의 오염도에 도달하기 어렵다. 따라서 이러한 기계적인 세정법에 이어 충분히 제거되지 못한 금속오염물을 제거하기 위한 2차 세정이 요구된다. 본 논문에서는 리모트 플라스마 세정법과 UV/$O_3$ 세정법을 사용하여 oxide CMP 후에 웨이퍼 표면에 많이 존재하는 K, Fe, Cu등의 금속오염물을 제거하는데 대한 연구결과를 보고하고자 한다. 리모트 수소 플라스마 세정결과에 의하면, 세정시간이 짧을 수록, rf-power가 증가할수록 세정 효과가 우수한 것으로 나타났으며, CMP 공정 후 웨이퍼 표면에 특히 많이 존재하는 금속 불순물인 K, Fe, Cu 등의 오염 제거를 위한 최적 공정 조건은 세정시간이 1분, rf-power가 100 W인 것으로 나타났다. AFM 분석 결과에 의하면 rf-power의 증가에 따라 표면 거칠기가 미소하게 증가하는데 , 이것은 플라스마에 의한 손상 때문인 것으로 보이나 그 정도는 무시할만하다. 한편, UV/$O_3$ 세정의 경우에는 세정공정시간이 30 sec일때 가장 우수한 세정효과가 얻어졌다. 리모트 수소 플라스마 및 UV/$O_3$ 세정방법에 의한 Si 웨이퍼 표면의 금속 불순물 제거기구는 Si표면 금속오염의 하단층에 생성된 $SiO_2H^+$/ 및 $e^-$와 반응하여 $SiO^*$상태로 휘발될 때 금속불순물이 $SiO^*$에 묻어서 함께 제거되는 것으로 사료된다.