• 대한기계학회논문집A
• /
• 제29권2호
• /
• pp.341-349
• /
• 2005

Damage often occurs on the surface of railway wheel by wheel-rail contact fatigue. It should be removed before reaching wheel failure, because wheel failure can cause derailment with loss of life and property. The increase or decrease of the contact fatigue life by the metal removal of the contact surface were shown by many researchers, but it has not explained precisely why fatigue life increases or decreases. In this study, the effect of metal removal depth on the contact fatigue life for railway wheel has been evaluated by applying finite element analysis. It has been revealed that the residual stress and the plastic flow are the main factors determining the fatigue life. The railway wheel has the initial residual stress formed during the manufacturing process, and the residual stress is changed by thermal stress induced by braking. It has been found that the initial residual stress determines the amount of metal removal depth. Also, the effects of the initial residual stress and metal removal on the contact fatigue lift has been estimated, and an equation is proposed to decide the optimal metal removal depth for maximizing the contact fatigue life.

• 대한기계학회논문집A
• /
• 제29권10호
• /
• pp.1384-1391
• /
• 2005

Damage often occurs on the surface of railway wheels due to wheel-rail contact fatigue. It should be removed before reaching wheel failure, because wheel failure can cause derailment with loss of life and property. The increase or decrease of the contact fatigue lift by the metal removal of the contact surface were investigated by many researchers, but they have not considered initial residual stress and traction force. The railway wheel has the initial residual stress formed during the manufacturing process, and the residual stress is changed by thermal stress induced by braking. The traction force and residual stress are operated on wheels of locomotive and electric motor vehicle. In this study, the effect of metal removal depth on the contact fatigue life for a railway wheel has been evaluated by applying lolling contact fatigue test. The effect of the traction force and metal removal on the contact fatigue life has been estimated by finite element analysis. It has been found that the initial residual stress determines the amount of metal removal depth if the traction coefficient is less than 0.15. If the traction coefficient is greater than 0.2, however, the amount of metal removal depth is independent on the intial residual stress.

• 한국정밀공학회지
• /
• 제19권1호
• /
• pp.196-203
• /
• 2002

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.

• Journal of Mechanical Science and Technology
• /
• 제20권2호
• /
• pp.227-233
• /
• 2006

Engineering ceramics have many unique characteristics both in mechanical and physical properties such as high temperature hardness, high thermal, chemical and electrical resistance. However, its machinability is very poor in conventional machining due to its high hardness and severe tool wear. In the current experimental study, alumina $(Al_2O_3)$ was ultrasonically machined using SiC abrasives under various machining conditions to investigate the material removal rate and surface quality of the machined samples. Under the applied amplitude of 0.02mm, 27kHz frequency, three slurry ratios of 1:1, 1:3 and 1:5 with different tool shapes and applied static pressure levels, the machining was conducted. Using the mesh number of 240 abrasive, slurry ratio of 1:1 and static pressure of $2.5kg/cm^2$, maximum material removal rate of $18.97mm^3/min$ was achieved. With mesh number of 600 SiC abrasives and static pressure of $3.0kg/cm^2$, best surface roughness of $0.76{\mu}m$ Ra was obtained.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.118-118
• /
• 2008

The oxide CMP has been applied to interlayer dielectric(ILD) and shallow trench isolation (STI) in chip fabrication. Recently the slurry used in oxide CMP being changed from silica slurry to ceria (cerium dioxide) slurry particularly in STI CMP, because the material selectivity of ceria slurry is better than material selectivity of silica slurry. Moreover, the ceria slurry has good a planarization efficiency, compared with silica slurry. However ceria abrasives make a material removal rate too high at the region of wafer center. Then we focuses on why profile of material removal rate is convex. The material removal rate sharply increased to 3216 $\AA$/min by $4^{th}$ run without conditioning. After $4^{th}$ run, material removal rate converged. Furthermore, profile became more convex during 12 run. And average material removal rate decreased when conditioning process is added to end of CMP process. This is due to polishing mechanism of ceria. Then the ceria abrasive remains at the pad, in particular remains more at wafer center contacted region of pad. The field emission scanning electron microscopy (FE-SEM) images showed that the pad sample in the wafer center region has a more ceria abrasive than in wafer outer region. The energy dispersive X-ray spectrometer (EDX) verified the result that ceria abrasive is deposited and more at the region of wafer center. Therefore, this result may be expected as ceria abrasives on pad surface causing the convex profile of material removal rate.

• 대한기계학회논문집A
• /
• 제33권10호
• /
• pp.1023-1028
• /
• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
• /
• pp.445-446
• /
• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.

• 한국정밀공학회지
• /
• 제30권12호
• /
• pp.1227-1235
• /
• 2013

Ceramic materials are classified by oxide, nitride and carbide material and have high brittleness, strength and hardness. Ceramic materials are strong in compression but weak in shearing and tension. This review paper has focused on technology trends and mechanism analysis of ceramics removal machining. The ceramic materials have superior mechanical, physical and chemical properties, but it is very hard to machining and the use of ceramics has been limited because of high strength and brittleness. In this paper, technology trends of ceramic removal-machining was introduced for types of machining technology, abrasive machining, cutting process, laser machining and so on.

• 한국정밀공학회지
• /
• 제32권7호
• /
• pp.627-631
• /
• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권12호
• /
• pp.549-554
• /
• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.