• 소성∙가공
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• 제24권6호
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• pp.431-436
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• 2015

MR fluid can change viscosity in the presence of a magnetic field. A characteristic of MR fluid is reduced scattering during jetting. For these reasons a MR fluid jet polishing system can be used for ultra-precision polishing. In the current paper, the polishing path was calculated considering the aspherical lens profile equation and the experimental conditions for the MR fluid jet polishing system. Then the polishing of an aspherical lens mold core using the MR fluid jet polishing system with the calculated path control was made and the results were compared before and after polishing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.569-570
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• 2006

The conditioning process is very important process for the CMP (Chemical Mechaning Polishing). This process regenerates the roughness of the polishing pad during the CMP process, increases the MRR (Material Removal Rate) and gives us longer pad life so conditioning process is essential for the CMP, and conditioning process influences the polishing pad shape gradually. Conditining process is related to the Non-Uniformity. In This paper, Kinematic of the conditioning process and mathematic modeling of the pad wear is studied and result shows how the various parameters influence the pad shape and WIWNU[1]. Consequently through these parameter, optimal design of the conditioning process equipment is predicted.

• Design & Manufacturing
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• 제12권2호
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• pp.16-21
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• 2018

Recently, as the demand for high-precision parts increases due to industrial development, a machine tool system for ultra-precision machining and polishing has been actively developed. As a result, there is an increasing demand for ultra-precision surface roughness along with dimensional processing. However, due to the increase in processing time due to the demand for ultra-precise surfaces and enormous facility investment, it is difficult to secure competitiveness. The polishing process using the abrasive film in super precision machining has been applied to machines, electronic devices, aerospace, and medical fields. Super finishing using the abrasive film which is applied in the industrial field recently can achieve high surface roughness in a short time. Super finishing using the abrasive film which is applied in the industrial field recently can achieve high surface roughness in a short time. Also, application of industrial field is increasing due to advantages such as low noise and low dust. Recently, researches on stainless steel having strong resistance to corrosion, heat resistance, heat resistance, toughness and weldability have been actively conducted with respect to the nuclear energy industry or marine development. Therefore, in this study, surface roughness and residual stress were measured after SUS304 polishing using dynamic analysis of film polishing apparatus and polishing film.

• 대한기계학회논문집A
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• 제35권12호
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• pp.1641-1646
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• 2011

자기연마공정은 유동성이 높은 연마입자를 활용하기 때문에 곡면 및 그루브 형상에도 적용이 가능한 장점을 지니고 있다. 본 연구에서는 제 2세대 자기연마법을 활용하여 그루브 형상에 대한 자기연마가공 특성을 평가하여, 이를 향후 연료전지 채널과 같은 3차원 형상의 자기연마에 활용하고자 한다. 실험은 최대 1.5mm 깊이의 그루브에 대해 자기연마가공 후 슬롯부 및 랜드부의 표면거칠기 변화를 관찰하였다. 그 결과 랜드부의 길이가 증가하고 그루브의 깊이가 깊어질수록 랜드부의 표면거칠기 향상정도는 높아졌다. 또한 슬롯부의 표면거칠기 향상정도는 랜드부와 슬롯부의 길이비가 증가하고 그루브의 깊이가 깊어질수록 감소하는 경향을 나타내었다. 마지막으로 자기연마가공을 통해서 그루브의 형상에는 큰 변화없이, 그루브의 모서리에 생성된 버를 효과적으로 제거할 수 있었다.

• 한국기계가공학회지
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• 제13권1호
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• pp.121-128
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• 2014

Superfinishing is essential for mirror surfaces, because among mechanical components cylindrical workpieces such as spindles must maintain precision and reliability with respect to functional characteristics. However, research on standardization of polishing film application combination to obtain mirror surfaces is insufficient. Consequently, this has been a factor in rising costs of mechanical components. Therefore, in this study, experiments have been conducted to determine efficient polishing film application combination for mirror surfaces ranging from ductile materials such as SM45C, brass, aluminium 7075, and titanium to brittle materials such as $Al_20_3$, SiC, $Si_3N_4$, and $ZrO_2$. From the experimental results, efficient polishing film application combination for metallic materials and ceramic materials is confirmed.

• Tribology and Lubricants
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• 제33권6호
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• pp.282-287
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• 2017

SU-8 is an epoxy-type photoresist widely used for the fabrication of high-aspect-ratio (HAR) micro-structures in micro-electro-mechanical systems (MEMS). To fabricate highly integrated structures, chemical mechanical polishing (CMP) has emerged as the preferred manufacturing process for planarizing the MEMS structure. In SU-8 CMP, an oxidizer decomposes organic impurities and particles in the CMP slurry remove the chemically reacted surface of SU-8. To fabricate HAR microstructures using the CMP process, the adhesion between SU-8 and substrate material is important to avoid the delamination of the SU-8 film caused by the mechanical-dominant material removal characteristic. In this study, the friction force during the CMP process is measured with a CMP monitoring system to detect the delamination phenomenon and investigate the delamination of the SU-8 film from the silicon substrate under various pressure conditions. The increase in applied pressure causes an increase in the frictional force and wafer-edge stress concentration. The frictional force measurement shows that the friction force changes according to the delamination phenomenon of the SU-8 film, and that it is possible to monitor the delamination phenomenon during the SU-8 CMP process. The delamination at a high applied pressure is explained by the effect of stress distribution and pad deformation. Consequently, it is necessary to control the pressure of polishing, which can avoid the delamination in SU-8 CMP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1283-1287
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• 2004

The design rules are being more strict with requirement of operation speed and development of IC industry. For this reason, required minimum line-width has been narrowed under sub-micron region. As the length of minimum line-width is narrowed, local and global planarization are being prominent. CMP(Chemical-Mechanical Polishing), one of the planarizarion technology, is a process which polishes with the ascent of chemical reaction and relative velocity between pad and wafer without surface defects. CMP is performed with a complex interaction among many factors, how CMP has an interaction with such factors is not evident. Accordingly, the studies on this are still carrying out. Therefore, an examination of the CMP phenomena and an accurate understanding of compositive factors are urgently needed. In this paper, we will consider of the relations between the effects of temperature which influences many factors having an effect on polishing results and the characteristics of CMP in order to understand and estimate the influence of temperature. Then, through the interaction of shown temperature and polishing result, we could expect to boost fundamental understanding on complex CMP phenomena.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 춘계학술대회 논문집(한국공작기계학회)
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• pp.327-331
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• 2001

In the process of optical parts machining, polishing has been applied. Traditional polishing process is suitable for spherical optical parts. But it is very difficult to apply traditional process for aspheric optical parts. Nowadays, as growing needs for aspherical optic parts, many researches have been conducted. In this study, we developed computer controlled polishing system which consists of three major parts of active pressure control for correcting polishing process, mechanical on-machine measurement for rough polishing, and optical on-machine measurement for finish polishing, respectively. In this paper, a systematic stretegy for correcting polishing process, pressure control scheme for polishing tool, and on-machine measurement methods for automated and precise polishing are suggested. The information about developed machine is also included.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.13-17
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• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.