• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.2
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• pp.191-195
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• 2012

Heavy flint optical glass(SF57HHT) is new material that has extremely high transmittance. Due to brittleness and high hardness, optical glass is one of the most difficult to materials for ultra-precision turning. According to the hypothesis of ductile machining, all materials, regardless of their hardness and brittleness, will undergo transition from brittle to ductile machining region below critical undefromed chip thickness. In this study, cutting test was carried out to evaluate cutting performance of heavy flint glass using ultra-precision machine with single crystal diamond bite. The machined workpiece surface topography, tool wear and surface roughness were examined using AFM and SEM. The experimental results indicate that the machining mode become the brittle mode to ductile mode, when the maximum undeformed chip thinkness is large than critical value. Tool wear mainly occurs on the flank face and its wear mechanism is dominated by abrasion. This study demonstrates the feasibility of SF57HHT by diamond turning.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.42 no.1
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• pp.26-34
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• 2010

Effects of drying condition (IR radiation) on the optical properties and the printability of coated paper were elucidated at various latex sizes and low and high coating color concentrations. It was found that the smaller latex provided better rheology and higher dry and wet pick strength than the larger one. The high solids coating resulted in higher paper gloss and smaller roughness than the low solids coating, even though the clay addition was reduced by 20 parts in the high solids coating. Increasing IR radiation prohibited binder migration into the base paper. Thus it improved binder distribution and decreased pores in the coated layer, resulting in the increased dry and wet pick strength and the improved printing gloss. On the other hand, the color trapping and ink set-off was impaired with increasing IR radiation. Print mottle index passed through a maximum with increasing IR radiation.

• Journal of the Optical Society of Korea
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• v.14 no.2
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• pp.163-169
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• 2010

Novel wafer-level fabrication of a glass ball-lens is realized for optoelectronic applications. A Pyrex wafer is bonded to a silicon wafer and cross-cut into a square-tile pattern, followed by wet-etching of the underlying silicon. Cubes of Pyrex on the undercut silicon are then turned into ball shapes by thermal reflow, and separated from the wafer by further etching of the silicon support. Radial variation and surface roughness are measured to be less than ${\pm}3\;{\mu}m$ and ${\pm}1\;nm$, respectively, for ball diameter of about $500\;{\mu}m$. A surface defect on the ball that is due to the silicon support is shown to be healed by using a silicon-optical-bench. Optical power-relay of the ball lens showed the maximum efficiency of 65% between two single-mode fibers on the silicon-optical-bench.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.660-664
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• 2008

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness, chemical stability, low friction and good adhesion properties. In this study, we investigated the effect of DC power on the characteristics of TiN thin films deposited on Si and glass substrates by DC magnetron sputtering using TiN target. We made TiN films of 300 nm thickness with various DC powers. The structural properties of films are investigated by x-ray diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester. The rms roughness was measured by atomic forced microscopy (AFM). In the result, TiN films had the smooth surface and exhibited (111) directions with the increase of DC Power. Also, especially in case of 175 W DC power, TiN film exhibited the maximum hardness about 8 GPa, and the critical load near 25.

• Journal of the Korean Institute of Gas
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• v.1 no.1
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• pp.73-80
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• 1997

This study was performed to develop the dispersion modeling methodology for quantitative prediction of the hazard distance or toxic buffer distance by comparing 10-min average, 30-min average, and 1-hr average maximum ground-level concentration with $Cl_2$ regultaion concentration, IDLH and ERPG-3 concentration for hazardous toxic gas, $Cl_2$ releases from the storage tank of the chemical plant facilities. For this dispersion modeling, the source term model, dispersion model, meteorological and topographical data are incorporated into the SuperChems model, and then the effects of the atmospheric stability, wind speed, and surface roughness length changes on the maxum ground-level concentration were estimated.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Journal of Power System Engineering
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• v.16 no.6
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• pp.30-37
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• 2012

Effect of rib heights is found as significant parameter to enhance convective heat transfer performance under laminar and low turbulent regime. Circular ribs with different ribheight to channel height ratios, e/H = 0.05, 0.1, 0.15, are fabricated over the copper substrate respectively in a rectangular duct having 7.5 cross sectional aspect ratio. Only one rib pitch to rib height ratio (P/e = 10) has been chosen for all different height ribs. The result shows that the arithmetic average of turbulence intensity decreases with decreasing roughness height calculated between two ribs under laminar and low turbulent region. It occurs because the area of recirculation and reattachment zone also decreases with decreasing rib height. Optimum thermal enhancement factor is derived by 0.1 rib height to channel height ratio under low turbulent region but 0.15 rib height to channel height ratio gives maximum subjected to laminar flow.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.312-316
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• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.72-77
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• 2013

The effect of sputtering condition on the structural properties of ZnO thin films grown by RF magnetron sputtering system was investigated for TFT driver circuit. ZnO thin films were grown with ZnO target varying RF power and working pressure. Structural properties were investigated by X-ray diffraction (XRD) and atomic force microscope (AFM). The ZnO thin films have sufficient crystallinity on the 100W RF power. But, the surface roughness of ZnO films was increased as increased RF power. As increased working pressure from 5 mTorr to 15 mTorr, a full width at half maximum (FWHM) of ZnO (002) peak was increased.