• 제목/요약/키워드: Maximum light output

검색결과 94건 처리시간 0.028초

A Novel Flyback-type Utility Interactive Inverter for AC Module Systems

  • Shimizu Toshihisa;Nakamura Naoki;Wada Keiji
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.518-522
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    • 2001
  • In recent years, natural energy has attracted growing interest because of environmental concerns. Many studies have been focused on photovoltaic power generation systems because of the ease of use in urban areas. On the conventional system, many photovoltaic modules (PV modules) are connected in series in order to obtain the sufficient DC-bus voltage for generating AC output voltage at the inverter circuit. However, the total generation power on the PV modules sometimes decreases remarkably because of the shadows that partially cover the PV modules. In order to overcome this drawback, an AC module strategy is proposed. On this system, a small power DC-AC utility interactive inverter is mounted on each PV module individually and the inverter operates so as to generate the maximum power from the corresponding PV module. This paper presents a novel flyback-type utility interactive inverter circuit suitable for AC module systems. The feature of the proposed system are, (1) small in volume and light in weight, (2) stable AC current injection, (3) enabling a small DC capacitor. The effectiveness of the proposed system is clarified through the simulation and the experiments.

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초음파 금속 용착용 반파장 혼의 설계 (A Horn of Half-Wave Design for Ultrasonic Metal Welding)

  • 장호수;박우열;박동삼
    • 한국기계가공학회지
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    • 제11권1호
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    • pp.76-81
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    • 2012
  • Ultrasonic metal welding is one of the welding methods which welds metal by applying high frequency vibrational energy into specific area at constant pressure, avaliable in room temperature and low temperature. Ultrasonic metal welder is consisted of power supply, transducer, booster, and horn. Precise designing is required since each parts' shape, length and mass can affect driving frequency and vibration mode. This paper focused to horn design, its length L was set to 62mm by calculating vibration equation. By performing modal analysis with various shape variable b times integer, when length of b is 30mm the output was 39,599Hz at 10th mode. Also by performing harmonic response analysis, the frequency response result was 39,533Hz, which was similar to modal analysis result. In order to observe the designed horn's performance, about 4,000 voltage data was obtained from a light sensor and was analyzed by FFT analysis using Origin Tool. The result RMS amplitude was approximately 8.5${\mu}m$ at 40,000Hz, and maximum amplitude was 12.3${\mu}m$. Therefore, it was verified that the ultrasonic metal welding horn was optimally designed.

광로차 보상회로가 부착된 마이켈슨 간섭계에 의한 탄성파 신호검출 (Detection of Elastic Waves Using Stabilized Michelson Interferometer)

  • 김영환;소철호;권오양
    • 비파괴검사학회지
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    • 제13권4호
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    • pp.32-41
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    • 1994
  • 탄성파에 의한 미소 동적 변위를 측정하기 위하여 안정화 회로가 부착된 Michelson 간섭계를 개발하였다. 안정화 회로는 외부 진동신호에 따른 광로차의 교란을 보상하기 위하여 압전구동기가 부착된 기준거울을 사용하였다. 안정화 회로를 사용함으로써, 간섭계는 외부 진동신호의 영향을 줄일 수 있었고, 항상 직각조건(quadrature condition)을 만족하여 광검출기의 출력신호가 최대의 감도와 선형성을 유지할 수 있었다. 검출가능한 최소 변위는 10MHz 대역에서 0.3nm 이었다. 개발된 간섭계를 사용하여 유리관 파괴 및 강철구 충격에 의한 진앙점에서의 변위를 검출하여 이론적으로 계산된 값과 비교하였다.

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FR4 PCB면적과 Via-hole이 LED패키지에 미치는 열적 특성 분석 (Analysis of Thermal Properties in LED Package by Via-hole and Dimension of FR4 PCB)

  • 김성현;이세일;양종경;박대희
    • 한국전기전자재료학회논문지
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    • 제24권3호
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    • pp.234-239
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    • 2011
  • In this study, the heat transfer capability have been improved by using via-holes in FR4 PCB, when the LED lighting is designed to solve the thermal problem. The thermal resistance and junction temperature were measured by changing the dimension of FR4 PCB and size of via hole. As a result, when the dimension was increased initially, the thermal resistance and junction temperature was decreased rapidly, the ones was stabilized after the dimension of 200 $[mm^2]$. Also, the light output was improved up to maximum 17% by formation of via-hole and expansion of dimension in FR4 PCB. Therefore, the thermal resistance and junction temperature could be improved by expansion of PCB dimension and configuration of via-hole ability.

Steady-State and Transient Response Analysis of DSSC Based on Electron Diffusion Coefficient and Chemical Capacitance

  • J. C. Gallegos;J. Manriquez;R. Rodriguez;S. Vargas;D. Rangel
    • Journal of Electrochemical Science and Technology
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    • 제15권2호
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    • pp.276-290
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    • 2024
  • A study of the transition from transitory state to steady state in DSSCs based on natural dyes is presented; cochineal was used as dye and Li+, Na+, and K+ were the ions added to the electrolyte. The photocurrent profiles were obtained as a function of time. Several DSSCs were prepared with different cations and their role and the transitory-to-steady transition was determined. A novel hybrid charge carrier source model based on the Heaviside function H(t) and the Lambert-Beer law, was developed and applied to analysis of the transient response of the output photocurrent. Additionally, the maximum effective light absorption coefficient α and the electronic extraction rate κ for each ion were determined: ${\alpha}_{Li^+,Na^+,K^+}\,=\,(0.486,\,0.00085,\,0.1126)\,cm^{-1}$, and also the electronic extraction rate ${\kappa}^{Li^+,Na^+,K^+}_{ext.}\,=\,(1410,\,19.07,\,19.69)\,cm\,s^{-1}$. The impedance model using Fick's second law was developed for carrier recombination to characterize the photocurrent.

Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

  • Ban, Zhang;Liang, Zhongzhu;Liang, Jingqiu;Wang, Weibiao;JinguangLv, JinguangLv;Qin, Yuxin
    • Current Optics and Photonics
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    • 제1권2호
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    • pp.143-149
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    • 2017
  • LED arrays with pixel numbers of $3{\times}3$, $4{\times}4$, and $5{\times}5$ have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of $280{\times}280{\mu}m$) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the $3{\times}3$, $4{\times}4$, $5{\times}5$ arrays were $52^{\circ}C/W$, $69.7^{\circ}C/W$, and $84.3^{\circ}C/W$. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with $40{\mu}m$ pixel pitch and $150{\mu}m$ substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.

An Optical Intense 2D Electric Field Sensor Using a Single LiNO3 Crystal

  • Zhang, Yuanying;Zhang, Jiahong;Li, Yingna;Lei, Hongyi
    • Current Optics and Photonics
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    • 제6권2호
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    • pp.183-190
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    • 2022
  • Based on the linear electro-optic (EO) effect of lithium niobite (LiNbO3, LN) crystal, an intense two-dimensional (2D) electric field sensor was analyzed, fabricated and experimentally demonstrated. The linear polarized light beam transmits along the optical axis (z-axis) of the LN crystal, and the polarization direction of the polarized light is 45° to the y-axis. The sensor can detect the intensity of a 2D electric field that is perpendicular to the z-axis. Experimental results demonstrated that the minimum detectable electric field of the sensor is 10.5 kV/m. The maximum detected electric field of the sensor is larger than 178.9 kV/m. The sensitivity of the sensor is 0.444 mV/(kV·m-1). The variation of the sensitivity is within ±0.16 dB when the sensor is rotated around a z-axis from 0° to 360°. The variation of the sensor output optical power is within ±1.4 dB during temperature change from 19 ℃ to 26 ℃ in a day (from 7:00 AM to 23:00 PM) and temperature change from 0 ℃ to 40 ℃ in a controllable temperature chamber. All theoretical and experimental results revealed that the fabricated sensor provides technology for the direct detection of intense 2D electric fields.

MPPT 제어기능을 갖는 마이크로 빛에너지 하베스팅 회로 (A Micro Solar Energy Harvesting Circuit with MPPT Control)

  • 윤은정;박종태;유종근
    • 전자공학회논문지
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    • 제50권6호
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    • pp.105-113
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    • 2013
  • 본 논문에서는 0.5V 이하의 낮은 전압을 출력하는 초소형 PV(photovoltaic) 셀을 이용한 MPPT(Maximum Power Point Tracking) 제어 기능을 갖는 마이크로 빛에너지 하베스팅 시스템을 제안한다. MPPT 제어는 PV 셀의 개방전압과 MPP(Maximum Power Point) 전압간의 비례관계를 이용하여, 파일럿(pilot) PV 셀로 하여금 주(main) PV 셀의 MPP를 실시간 추적할 수 있도록 설계하였다. 제안된 회로는 0.18um CMOS 공정으로 설계되었으며, 칩 면적은 부하단 전하펌프와 패드를 포함하여 $900um{\times}1370um$이다. 제작된 칩을 측정한 결과 설계된 회로가 빛 세기의 변화에 따른 MPP 전압 변화를 실시간 트래킹하는 것을 확인하였다. 또한 MPPT 제어기능을 적용했을 때 부하가 큰 경우에도 MPP 근처의 전압을 부하에 공급함으로써 MPPT 제어기능을 적용하지 않았을 때에 비해 더 많은 전력을 부하로 공급하는 것을 확인하였다. 기존의 마이크로 빛에너지 하베스팅 회로에 비해 제안된 회로는 제어회로 구동을 위해 미리 충전된 배터리가 필요하지 않기 때문에 배터리를 사용하지 않는 초소형 자가발전 시스템에 적합하다.

940-nm 350-mW Transverse Single-mode Laser Diode with AlGaAs/InGaAs GRIN-SCH and Asymmetric Structure

  • Kwak, Jeonggeun;Park, Jongkeun;Park, Jeonghyun;Baek, Kijong;Choi, Ansik;Kim, Taekyung
    • Current Optics and Photonics
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    • 제3권6호
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    • pp.583-589
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    • 2019
  • We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (Ith) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (Iop) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

CMOS 0.18um 공정을 이용한 Dead-Time 적응제어 기능을 갖는 PWM DC-DC Boost 변환기 설계 (Design of a PWM DC-DC Boost Converter with Adaptive Dead-Time Control Using a CMOS 0.18um Process)

  • 황인호;윤은정;박종태;유종근
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.285-288
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    • 2012
  • 기존의 DC-DC Boost 변환기에 사용되는 일반적인 non-overlapping gate driver는 dead-time이 고정되어 있기 때문에 body-diode conduction loss 또는 charge-sharing loss가 발생하는 문제점이 있다. 따라서 본 논문에서는 이러한 loss에 의한 효율 감소를 줄이기 위해 dead-time 적응제어 기능을 갖는 PWM DC-DC Boost 변환기를 설계하였다. 또한, 부하전류가 작은 경우 효율을 증가시키기 위해 power switching 회로를 사용하였다. 그 결과 넓은 부하 전류 범위에서 높은 효율을 얻을 수 있다. 제안된 DC-DC Boost 변환기는 CMOS 0.18um공정으로 설계하였다. 2.5V의 입력전압을 받아서 3.3V의 출력전압을 얻는다. 스위칭 주파수는 500kHz이며, 최대효율은 97.8%이다.

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