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Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

  • Ban, Zhang (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences) ;
  • Liang, Zhongzhu (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences) ;
  • Liang, Jingqiu (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences) ;
  • Wang, Weibiao (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences) ;
  • JinguangLv, JinguangLv (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences) ;
  • Qin, Yuxin (State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences)
  • Received : 2016.06.28
  • Accepted : 2017.04.03
  • Published : 2017.04.25

Abstract

LED arrays with pixel numbers of $3{\times}3$, $4{\times}4$, and $5{\times}5$ have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of $280{\times}280{\mu}m$) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the $3{\times}3$, $4{\times}4$, $5{\times}5$ arrays were $52^{\circ}C/W$, $69.7^{\circ}C/W$, and $84.3^{\circ}C/W$. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with $40{\mu}m$ pixel pitch and $150{\mu}m$ substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.

Keywords

References

  1. S. H. Lee, K. J. Chang, G. T. Hwang, and K. J. Lee, "Self-powered flexible inorganic electronic system," Nano Energy. 14, 111-125 (2014).
  2. J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, "III-Nitride full-scale high-resolution microdisplays," Applied Physics Letters. 99, 031116 (2011). https://doi.org/10.1063/1.3615679
  3. X. Li, J. D. Budai, and J. Y. Howe, "New yellow Ba0.93 Eu0.07Al2O4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion," Light Science & Applications. 2, 50 (2013). https://doi.org/10.1038/lsa.2013.6
  4. E. Matioli, S. Brinkley, K. M. Kelchner, Y. L. Hu, S. Nakamura, S. Denbaars, J. Speck and C. Weisbuch, "High-brightness polarized light-emitting diodes," Light Science & Applications. 1, 479-482 (2012).
  5. Z. J. Liu, K. M. Wong, W. K. Chi, C. W. Tang, and K. M. Lau, "Monolithic LED microdisplay on active matrix substrate using flip-chip technology," IEEE Journal of Selected Topics in Quantum Electronics. 15, 1298-1302 (2009). https://doi.org/10.1109/JSTQE.2009.2015675
  6. Y. C. Chu, M. H. Wu, C. J. Chung, Y. H. Fang, and Y. K. Su, "Micro-chip shaping for luminance enhancement of gan micro-light-emitting diodes array," Electron Device Letters IEEE. 35, 771-773 (2014). https://doi.org/10.1109/LED.2014.2320957
  7. A. L. Chaudet, M. Neil, P. Degenaar, K. Mehran, R. Berlinguer-Palmini, B. Corbet, P. Maaskant, D. Rogerson, P. Lanigan, E. Bamberg, B. Roska, "Development of optics with microled arrays for improved opto-electronic neural stimulation," Proceedings of SPIE-The International Society for Optical Engineering. 8586, 455-464 (2013).
  8. Q. Shan, Q. Dai, S. Chhajed, J. Cho, and E. F. Schubert, "Analysis of thermal properties of GaInN light-emitting diodes and laser diodes," Journal of Applied Physics. 108, 084504 (2010). https://doi.org/10.1063/1.3493117
  9. J. Herrnsdorf, J. J. D. Mckendry, S. Zhang, and E. Xie, "Active-matrix GaN micro light-emitting diode display with unprecedented brightness," IEEE Transactions on Electron Devices. 62, 1 (2015). https://doi.org/10.1109/TED.2015.2450072
  10. M. S. Kim, H. K. Lee, and J. S. Yu, "Device characteristics and thermal analysis of AlGaInP-based red monolithic lightemitting diode arrays," Semiconductor Science & Technology. 28, 348-354(2013).
  11. H. K. Lee, D. H. Lee, Y. M. Song, Y. T. Lee and J. S. Yu, "Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses," Solid-State Electronics. 56, 79-84 (2011). https://doi.org/10.1016/j.sse.2010.10.007
  12. C. Tian, W. Wang, J. Liang, Z. Liang, Y. Qin, and J. Lv, "Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode," Aip Advances. 5, 771 (2015).
  13. X. Bao, J. Liang, Z. Liang, W. Wang, C. Tian, Y. Qin, and J. Lv, "Design and fabrication of AlGaInP-based micro-lightemitting-diode array devices," Optics & Laser Technology. 78, 34-41 (2016). https://doi.org/10.1016/j.optlastec.2015.09.016
  14. K. Chen and N. Narendran, "Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis," Microelectronics Reliability. 53, 701-705 (2013). https://doi.org/10.1016/j.microrel.2013.01.003
  15. R. J. Cheng and K. M. Liew, "A meshless analysis of threedimensional transient heat conduction problems," Engineering Analysis with Boundary Elements. 36, 203-210 (2012). https://doi.org/10.1016/j.enganabound.2011.07.001
  16. Y. S. Muzychka, M. M. Yovanovich, and J. R. Culham, "Thermal spreading resistance in compound and orthotropic systems," Journal of Thermophysics & Heat Transfer. 18, 45-51 (2004). https://doi.org/10.2514/1.1267
  17. M. M. Yovanovich, Y. S. Muzychka, and J. R. Culham, "Spreading resistance of isoflux rectangles and strips on compound flux channels," Journal of Thermophysics & Heat Transfer. 13, 495-500 (1999). https://doi.org/10.2514/2.6467
  18. Wlodzimierz and Nakwaski, "Thermal conductivity of binary, ternary, and quaternary III-V compounds," Journal of Applied Physics. 64, 159 (1988). https://doi.org/10.1063/1.341449
  19. M. Guden and J. Piprek, "Material parameters of quaternary III-V semiconductors for multilayer mirrors at 1.55 ${\mu}m$ wavelength" Modelling and Simulation in Materials Science and Engineering. 4, 349-357 (1996). https://doi.org/10.1088/0965-0393/4/4/002
  20. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Applied physics letters 93, 041102 (2008). https://doi.org/10.1063/1.2963029

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